2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.15 A) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V IC 3 ICP 5 IB 1 Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.5 40 A A W Tj 150 °C Tstg −55 to 150 °C 1 JEDEC ― JEITA ― TOSHIBA 2-10S1A Weight: 1.5 g (typ.) 2004-07-26 2SC5361 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 720 V, IE = 0 ― ― 100 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 900 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 800 ― ― V VCE = 5 V, IC = 1 mA 10 ― ― hFE (1) DC current gain VCE = 5 V, IC = 0.15 A 15 ― ― VCE (sat) IC = 1.2 A, IB = 0.24 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 1.2 A, IB = 0.24 A ― ― 1.3 V ― ― 0.7 ― ― 4.0 ― ― 0.5 Storage time Fall time tstg tf VCC ≈ 360 V 20 µs IC IB1 Input IB2 Switching time tr IB1 Rise time 300 Ω hFE (2) Collector-emitter saturation voltage Output µs IB2 IB1 = 0.24 A, IB2 = −0.48 A, duty cycle ≤ 1% Marking C5361 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5361 IC – VCE 3 IC – VBE 3 Common emitter Tc = 25°C Common emitter 1.0 IC (A) IC (A) 0.6 0.5 2 0.4 Collector current Collector current VCE = 5 V 0.8 0.3 0.2 1 0.1 2 1 Tc = 100°C 25 0.05 −55 IB = 0.02 A 0 0 2 4 6 Collector-emitter voltage 8 VCE 0 0 10 (V) 0.2 0.4 0.6 Base-emitter voltage hFE – IC Collector-emitter saturation voltage VCE (sat) (V) hFE DC current gain Tc = 100°C 25 10 −55 Common emitter VCE = 5 V 1.4 (V) 0.01 0.1 1 Common emitter IC/IB = 5 1 Tc = 100°C 0.1 0.1 VBE (sat) – IC Common emitter Switching time (µs) IC/IB = 5 25 Tc = 100°C 0.1 10 Switching Characteristics 10 −55 1 Collector current IC (A) 10 1 25 −55 0.05 0.01 10 Collector current IC (A) Base-emitter saturation voltage VBE (sat) (V) VBE 1.2 10 100 0.1 0.01 1.0 VCE (sat) – IC 1000 1 0.001 0.8 1 1 Collector current IC (A) tstg tf tr 0.1 0.01 10 IC = 5IB1, 2IB1 = −IB2, Pulse width = 20 µs Duty cycle ≤ 1% Tc = 25°C 0.1 1 10 Collector current IC (A) 3 2004-07-26 2SC5361 Safe Operating Area PC – Ta 60 10 IC max (continuous) 1 ms* Collector power dissipation (A) 1 Collector current IC Infinite heat sink (2) No heat sink PC 10 µs* 100 ms* 0.1 (1) Tc = Ta (mW) 10 ms* IC max (pulsed)* DC operation Tc = 25°C 40 (1) 20 (2) 0 0 0.01 40 80 120 Ambient temperature *: Single nonrepetitive 160 Ta 200 (°C) pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 1 3 5 10 VCEO max 30 50 Collector-emitter voltage 10 VCE 300 500 1000 (V) 4 2004-07-26 2SC5361 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26