〈SMALL-SIGNAL TRANSISTOR〉 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ●Excellent linearity of DC forward gain. ●Ultra super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage TERMINAL CONNECTER Amplify application. ①：BASE JEITA：SC-75A ②：EMITTER JEDEC：- ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol Ratings Unit VCBO Collector to Base voltage 50 V VCEO Collector to Emitter voltage 50 V VEBO I O Parameter Emitter to Base voltage Collector current 6 V 200 mA Pc Collector dissipation 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING L F Type name hFE Item ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol C to E break down voltage V(BR)CEO Limits Test conditions Unit Max 50 - - ICBO V CB=50V, I E=0mA - - 0.1 μA Emitter cut off current IEBO V EB =6V, I C=0mA - - 0.1 μA DC forward current gain ※ hFE V CE =6V, I C=1mA 150 - 500 DC forward current gain hFE V CE=6V, I C=0.1mA 90 - - VCE(sat) BE =∞ Typ Collector cut off current C to E Saturation Vlotage I C=100μA ,R Min V I C=100mA ,IB=10mA - - 0.3 V fT V CE=6V, I E=-10mA - 200 - MHz Collector output capacitance Cob V CB =6V, I E=0,f=1MHz - 2.5 - pF Noise figure NF V CE =6V, I E=-0.1mA,f=1kHz,RG=2kΩ - - 15 dB Gain bandwidth product ※） It shows hFE classification at right table. Item E F hFE Item 150∼300 250∼500 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 0.16mA 50 Ta=25℃ 0.14mA Ta=25℃ VCE=6V 0.12mA 40 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 50 0.10mA 30 0.08mA 0.06mA 20 0.04mA 10 0.02mA 40 30 20 10 IB=0 0 0 0 1 2 3 4 COLLECTOR EMITTER VOLTAGE VCE(V) 5 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 250 GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=6V 100(@IC=1mA) 1000 100 10 0.1 1 10 100 Ta=25℃ VCE=6V 200 150 100 50 0 -0.1 1 1000 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE -1 -10 EMITTER CURRENT IE(mA) -100 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 100 250 Ta=25℃ IE=0 f=1MHz COLLECTOR DISSIPATION Pc (mW) COLLECTOR OUTPUT CAPACITANCE Cob(pF) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 1 10 1 200 150 100 50 0 0 0.1 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION 125 150 〈SMALL-SIGNAL TRANSISTOR〉 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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