To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC5593 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-797 (Z) 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 23 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 Note: Marking is “XH-”. 1. Emitter 2. Collector 3. Emitter 4. Base 2SC5593 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 4.5 V Emitter to base voltage VEBO 1 V Collector current IC 12 mA Collector power dissipation Pc 50 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 12 — — V I C = 10 µA , IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 10 V , IE = 0 Collector cutoff current I CEO — — 1 µA VCE = 4 V , RBE = ∞ Emitter cutoff current I EBO — — 12 µA VEB = 1 V , IC = 0 DC current transfer ratio hFE 60 100 140 V VCE = 2 V , IC = 10 mA Collector output capacitance Cob — 0.16 0.4 pF VCB = 2 V , IE = 0 f = 1 MHz Gain bandwidth product fT 20 23 — GHz VCE = 2 V , IC = 10 mA f = 2 GHz Power gain PG 14 18 — dB VCE = 2 V , IC = 10 mA f = 1.8 GHz Noise figure NF — 1.8 2.3 dB VCE = 2 V , IC = 3 mA f = 1.8 GHz 2 2SC5593 Main Characteristics DC Current Transfet Ratio vs. Collector Current 200 hFE 200 DC Current Transfer Ratio 150 100 50 0 50 0 100 150 (pF) Ambient Temperature 200 1 IE = 0 f = 1MHz 0.8 5 10 Collector Current Ta (°C) Collector Output Capacitance vs. Collector to Base Voltage 1.0 2 20 50 IC (mA) 100 Gain Bandwidth Product vs. Collector Current 50 40 Gain Bandwidth Prodfuct Collector Output Capacitance fT Cob VCE = 3 V 2V 1V 100 (GHz) Collector Power Dissipatio Pc (mW) Collector Power Dissipation Curve 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 10 VCB (V) 30 VCE = 3 V 20 2V 1V 10 0 1 2 5 10 Collector Current 20 50 100 I C (mA) 3 2SC5593 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 3 V 2V NF (dB) PG 12 Power Gain (dB) 16 VCE = 1 to 3 V 8 Noise Figure 1V 4 f = 1.8GHz 4 3 2 1 f = 1.8GHz 0 1 0 2 5 10 20 Collector Current 50 100 1 2 5 10 Collector Current I C (mA) 20 50 100 I C (mA) S21Parameter vs. Collector Current 20 2V 16 S21 Parameter 2 |S21| (dB) VCE = 3 V 1V 12 8 4 f = 2GHz 0 1 2 5 10 Collector Current 20 50 100 I C (mA) 4 2SC5593 S21 Paramter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 5 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° −10 −5 −4 −.2 −3 −.4 −30° −150° −2 −.6 −.8 −1 −60° −120° −1.5 −90° Condition : V CE = 2 V , I C = 10 mA Condition : V CE = 2 V , I C = 10 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.02 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30° −150° −3 −.4 −120° −60° −90° Condition : V CE = 2 V , I C = 10 mA 100 to 2000 MHz (100 MHz step) −2 −.6 −.8 −1 −1.5 Condition : V CE = 2 V , I C = 10 mA 100 to 2000 MHz (100 MHz step) 5 2SC5593 S-parameter ( VCE = 2 V, IC = 10 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 0.804 –8.2 22.02 172.5 0.00305 94.6 0.993 –3.4 200 0.795 –17.8 21.55 165.0 0.0067 86.8 0.986 –8.1 300 0.776 –27.4 20.88 157.5 0.0107 85.4 0.972 –12.7 400 0.746 –35.8 20.05 150.2 0.0146 82.5 0.947 –17.2 500 0.714 –44.5 18.93 143.7 0.0182 78.4 0.917 –21.2 600 0.673 –53.2 17.84 137.9 0.0215 74.8 0.881 –25.1 700 0.632 –59.9 16.60 132.5 0.0249 71.8 0.842 –28.3 800 0.595 –67.1 15.69 127.9 0.0274 67.9 0.808 –31.2 900 0.557 –74.6 14.64 123.5 0.0296 65.1 0.763 –33.7 1000 0.519 –79.1 13.68 119.5 0.0319 63.6 0.729 –35.6 1100 0.488 –86.0 12.88 116.0 0.0337 61.6 0.696 –37.2 1200 0.454 –91.1 12.03 112.8 0.0350 60.4 0.666 –38.6 1300 0.430 –95.9 11.26 110.6 0.0366 58.8 0.644 –39.5 1400 0.403 –101.8 10.69 107.8 0.0382 57.4 0.619 –40.6 1500 0.377 –106.3 10.16 105.4 0.0401 56.6 0.598 –41.2 1600 0.364 –111.0 9.66 103.6 0.0410 56.3 0.581 –42.0 1700 0.346 –116.6 9.19 101.4 0.0422 55.6 0.564 –42.6 1800 0.327 –120.0 8.79 99.3 0.0435 55.2 0.550 –43.2 1900 0.313 –124.9 8.40 97.5 0.0447 55.2 0.537 –43.9 2000 0.296 –130.8 7.99 95.5 0.0457 54.8 0.525 –44.0 6 2SC5593 Package Dimensions Unit: mm 0.1 0.3 +– 0.05 0.2 0.65 0.6 1.25 ± 0.2 0.9 ± 0.1 0.1 0.4 +– 0.05 0 – 0.1 0.425 0.1 0.3 +– 0.05 + 0.1 0.16– 0.06 2.1 ± 0.3 0.65 0.65 1.25 ± 0.1 0.1 0.3 +– 0.05 0.425 2.0 ± 0.2 1.3 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) CMPAK-4(T) — Conforms 0.006 g 7 2SC5593 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8