ROHM 2SC5866

Medium power transistor (60V, 2A)
2SC5866
Dimensions (Unit : mm)
2.8
1.6
0.4
(1)
(3)
1.9
(1)Base
(2)Emitter
(3)Collector
Applications
Low frequency amplifier
High speed switching
0.3
0.6
1.0MAX
0.85
Each lead has same dimensions
0
0.1
0.7
0.16
(2)
0.95 0.95
TSMT3
2.9
Features
1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1.0m, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2094
Abbreviated symbol : VL
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
Taping
TL
3000
2SC5866
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
IC
2
A
ICP
4
A
PC
500
mW
Tj
150
°C
Tstg
−55 to +150
°C
Parameter
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
∗2
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
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1/3
2011.03 - Rev.A
2SC5866
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
60
−
−
V
IC=100μA
Collector−emitter breakdown voltage BVCEO
60
−
−
V
IC=1mA
−
V
IE=100μA
1.0
μA
VCB=40V
Collector−base breakdown voltage
Conditions
BVEBO
6
−
Collector cut-off current
ICBO
−
−
Emitter cut-off current
IEBO
−
−
1.0
μA
VEB=4V
VCE(sat)
−
200
500
mV
IC=1A, IB=0.1A ∗1
DC current gain
hFE
120
−
390
−
Transition frequency
fT
−
200
−
MHz
Collector output capacitance
Cob
−
10
−
pF
VCB=10V, IE=0mA, f=1MHz
Turn-on time
Ton
−
50
−
ns
Storage time
Tstg
−
120
−
ns
Fall time
Tf
−
35
−
ns
IC=2A,
IB1=2000mA
IB2= −200mA
VCC 25V ∗2
Emitter−base breakdown voltage
Collector−emitter staturation voltage
VCE=2V, IC=100mA
VCE=10V, IE= −100mA, f=10MHz∗1
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
hFE RANK
Q
R
120-270
180-390
Electrical characteristic curves
1000
VCE=2V
Ton
0.1
1
Ta= −40°C
10
1
0.001
10
Ta=25°C
COLLECTOR CURRENT : IC (A)
0.01
0.1
1
COLLECTOR SATURATION
VOLTAGE : VCE (sat)(V)
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
Ta=125°C
Ta=25°C
Ta= −40°C
1
1
10
10
Ta=25°C
1
0.1
0.1
Fig.3 DC current gain vs. collector
current
10
IC/IB=10/1
0.01
0.01
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain vs. collector
current
10
0.01
0.001
1
0.001
10
VCE=3V
10
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
0.1
VCE=2V
100
10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
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c 2011 ROHM Co., Ltd. All rights reserved.
○
IC/IB=10/1
BASE EMITTER SATURATION
VOLTAGE : VBE(sat) (V)
10
0.01
100
VCE=5V
DC CURRENT GAIN : hFE
Tf
100
Ta=25°C
Ta=125°C
DC CURRENT GAIN : hFE
Tstg
SWITCHING TIME (ns)
1000
1000
Ta=25°C
VCC=25V
IC/IB=10/1
1
0.1
0.01
0.001
IC/IB=20/1
IC/IB=10/1
Ta= −40°C
1
Ta=25°C
Ta=125°C
0.1
0.01
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
2/3
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
2011.03 - Rev.A
Data Sheet
10
1000
TRANSITION FREQUENCY : FT (MHz)
COLLECTOR CURRENT : IC (A)
VCE=2V
1
Ta=125°C
Ta=25°C
0.1
Ta= −40°C
Ta=25°C
VCE=10V
100
0.01
0
0.5
1
10
1
−0.001
1.5
−0.01
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.7 Ground emitter propagation
characteristics
−0.1
−1
−10
COLLECTOR OUTPUT CAPACITANCE : CoB (pF)
2SC5866
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Transition frequency
Fig.9 Collector output capacitance
Switching characteristics measurement circuits
RL=12.5Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle
1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
Ton
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○
Tstg Tf
3/3
2011.03 - Rev.A
Notice
Notes
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R1120A