2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCES 800 V Collector-emitter voltage VCEO 410 V Emitter-base voltage VEBO 8 V IC 1.0 ICP 2.0 IB 0.5 A PC 1.0 W Tj 150 °C Tstg −55 to 150 °C Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature range 1 1. Base 2. Collector 3. Emitter A JEDEC ― JEITA ― TOSHIBA Weight: 2-7D101A 0.2 g (typ.) 2004-12-01 2SC6040 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 800 V, IE = 0 ― ― 100 µA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 800 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 410 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 50 ― ― DC current gain hFE (2) VCE = 5 V, IC = 0.1 A 60 ― 120 hFE (3) VCE = 5 V, IC = 0.2 A 50 ― ― Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.3 V ― ― 0.5 ― ― 4.0 ― ― 0.2 IB2 Switching time Storage time tstg INPUT IB1 IC IB21 667 Ω VCC ≈ 200 V 20 µs tr IB1 Rise time OUTPUT µs IB1 = 0.1 A, −IB2 = 50 mA Fall time tf DUTY CYCLE ≤ 1% Marking C6040 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-12-01 2SC6040 IC – VCE IC – VCE 2.0 Common emitter Ta=25℃ Pulse test 1.6 150 150 100 1.2 80 60 40 0.8 20 0.4 IB = 10 mA 0 0 0.4 200 200 Collector current IC (A) Collector current IC (A) 2.0 0.8 1.2 1.6 2.0 Collector−emitter voltage VCE 1.6 100 80 60 1.2 40 0.8 20 IB = 10 mA 0.4 Common emitter Ta=25℃ Pulse test 0 0 2.4 2 4 (V) hFE – IC Ta = 100°C 100 25 −25 10 1 0.001 0.01 0.1 Collector current IC 1 1 25 −25 0.1 Ta = 100°C 0.01 0.001 10 0.01 (A) Collector current IC Base−emitter saturation voltage VBE (sat) (V) Ta = −25°C 100 0.01 0.1 Collector current IC 10 1 (A) IC – VBE 2.0 25 0.1 0.001 0.1 Collector current IC (A) Common emitter β =8 Pulse test 1 12 (V) Common emitter β= 8 Pulse test VBE (sat) – IC 10 10 VCE (sat) – IC 10 Common emitter VCE = 5 V Pulse test Collector−emitter saturation voltage VCE (sat) (V) DC current gain hFE 1000 8 6 Collector−emitter voltage VCE 1 1.6 Common emitter VCE = 5 V Pulse test 1.2 0.8 Ta = 100°C −25 0.4 25 10 0 0 (A) 0.4 0.8 Base-emitter voltage 3 1.2 VBE 1.6 (V) 2004-12-01 2SC6040 rth – tw (°C/W) 1000 Transient thermal resistance rth 100 10 1 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C 0.1 0.001 0.01 0.1 1 Pulse width 10 100 tw (s) Safe operating area PC – Ta 10 (A) Collector current IC 100 µs* 100 ms* 1 Collector power dissipation PC (W) 1.2 IC max (Pulse)* 10 µs* 10 ms* 1 ms* 0.1 DC operation Ta = 25°C 0.01 1000 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 Ambient temperature *:Single nonrepetitive pulse 160 Ta 200 (°C) Ta = 25°C Curves must be linearly with increase in VCEO max temperature. 0.001 1 derated 10 100 Collector−emitter voltage VCE 1000 (V) 4 2004-12-01 2SC6040 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-12-01