2SC6071 Ordering number : ENA0271 SANYO Semiconductors DATA SHEET 2SC6071 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 8 V IC 10 A 13 A Collector Current Collector Current (Pulse) Base Current ICP PW≤100µs IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C V 2 A 0.95 W 20 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max 10 µA 10 µA Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=40V, IE=0A VEB=4V, IC=0A DC Current Gain Gain-Bandwidth Product hFE fT VCE=2V, IC=1A VCE=5V, IC=1A Output Capacitance Cob 180 360 mV 0.93 1.4 V Collector-to-Emitter Saturation Voltage VCE(sat) VCB=10V, f=1MHz IC=5A, IB=250mA Base-to-Emitterr Saturation Voltage VBE(sat) IC=5A, IB=250mA 200 700 200 MHz 60 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22406EA MS IM TB-00002046 No. A0271-1/4 2SC6071 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-On Time Storage Time Fall Time V 8 V 40 See specified Test Circuit. 1000 ns tf See specified Test Circuit. 80 ns ns 0.5 1.5 5.5 0.5 1 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.8 1.2 SANYO : TP 1.2 4 7.0 1.5 2.3 6.5 5.0 7.0 5.5 2.3 V 50 IE=100µA, IC=0A See specified Test Circuit. 0.5 7.5 0.8 1.6 2 V 120 ton tstg 0.85 1 Unit max Package Dimensions unit : mm 7003-003 0.85 0.7 0.6 typ 120 2.3 4 min IC=100µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ Package Dimensions unit : mm 7518-003 6.5 5.0 Ratings Conditions 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR RB 50Ω RL + 100µF VBE= --5V + 470µF VCC=20V IC=20IB1= --20IB2=3A No. A0271-2/4 2SC6071 IC -- VBE 10 VCE=2V VCE=2V 9 7 DC Current Gain, hFE 8 7 6 5 3 2 --25°C 5°C 25°C 4 Ta= 7 Collector Current, IC -- A hFE -- IC 1000 Ta=75°C 5 25°C 3 --25°C 2 100 7 1 0 0.2 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 5 0.01 1.2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB 3 f=1MHz Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz VCE=5V 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 100 7 5 7 2 0.1 7 5 25 °C °C 75 3 = Ta 2 5°C --2 0.01 7 5 2 3 5 7 0.1 2 3 5 7 1.0 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 3 Collector Current, IC -- A 2 Collector Current, IC -- A 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT10661 7 VCE(sat) -- IC 0.1 °C 25 7 5 75 = Ta 3 °C C 5° --2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 10 7 5 5 7 10 IT10660 ASO ICP=13A (PW≤100µs) 10µs 100ms IC=10A 3 2 1.0 7 5 µs s 500 5 7 0.1 5 IT10658 0µ 3 3 2 3 2 0.1 7 5 3 2 2 2 10 2 0.01 7 10 ms 10 n tio 3 5 era op 75°C 5 3 s 1m 7 2 DC 25°C 7 1.0 3 3 2 2 Ta= --25°C 5 Collector Current, IC -- A IC / IB=50 1.0 3 IC / IB=50 0.01 0.01 5 7 10 IT10659 VBE(sat) -- IC 3 2 Collector-to-Base Voltage, VCB -- V IC / IB=20 7 5 3 0.01 2 0.1 5 7 10 IT10657 VCE(sat) -- IC 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 3 10 0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 7 10 IT10656 Collector Current, IC -- A f T -- IC 3 2 IT10655 Tc=25°C 0.01 Single pulse 2 3 5 7 1.0 0.1 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT10662 No. A0271-3/4 2SC6071 PC -- Ta Collector Dissipation, PC -- W 0.8 0.7 0.6 a he k in ts 0.5 PC -- Tc 25 o N Collector Dissipation, PC -- W 1.0 0.95 0.9 0.4 0.3 0.2 20 15 10 5 0.1 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10663 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10664 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No. A0271-4/4