SANYO 2SC6083

2SC6083
Ordering number : ENA0899
SANYO Semiconductors
DATA SHEET
2SC6083
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
•
•
•
•
High breakdown voltage.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
700
V
Collector-to-Emitter Voltage
VCEO
350
V
Emitter-to-Base Voltage
VEBO
8
V
IC
1
A
2
A
Collector Current
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤300µs, duty cycle≤10%
0.5
A
0.6
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
typ
VCB=350V, IE=0A
VEB=5V, IC=0A
hFE1
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
100
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
60
hFE2
Gain-Bandwidth Product
Ratings
min
ICBO
IEBO
hFE3
Output Capacitance
Conditions
fT
Cob
VCB=10V, f=1MHz
Unit
max
10
µA
10
µA
200
10
20
MHz
8
pF
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80107CB TI IM TC-00000829 No. A0899-1/4
2SC6083
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
IC=1mA, IE=0A
IC=5mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
Collector-to-Base Breakdown Voltage
Turn-ON Time
ton
tstg
Storage Time
Fall Time
tf
typ
Unit
max
0.8
V
1.5
V
700
V
350
V
8
V
1.0
µs
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
2.5
µs
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
0.3
µs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7524-004
IB1
PW=20µs
D.C.≤1%
2.2
4.0
1.8
3.0
INPUT
0.4
0.5
OUTPUT
IB2
VR
RB
50Ω
0.6
+
100µF
0.4
15.0
0.4
2
VBE= --5V
1.3
0.7
0.7
3.0
3.8
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
IC -- VCE
0
100mA
0.8
0.7
0.6
30mA
20mA
0.5
0.4
50mA 40mA
60mA
0.3
10mA
70mA
80mA
90mA
0.1
4
0.7
0.6
0.5
0.4
0.3
0.1
IB=0mA
2
0.8
0.2
0
0
VCE=5V
0.9
Collector Current, IC -- A
20
IC -- VBE
1.0
150mA
mA
--40°C
1.0
0.2
VCC=200V
3
1.3
0.9
+
470µF
Ta=
120
°C
25°C
1
Collector Current, IC -- A
RL
6
8
Collector-to-Emitter Voltage, VCE -- V
0
10
IT12786
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V
1.4
IT12787
No. A0899-2/4
2SC6083
hFE -- IC
5
2
2
10
10
7
7
5
5
3
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
3
0.001
5 7 1.0
Collector Current, IC -- A
10
1.0
7
5
3
C
0°
12
2
=
Ta
2
0°C
--4
7
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
0.1
5
3
2
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 7 0.01
2
3
5 7 0.1
2
VCE(sat) -- IC
5
3
2
1.0
7
5
3
25
°C
2
0.1
2
3
5 7 0.01
2
3
5 7 0.1
Switching Time, SW Time -- µs
Ta= --40°C
25°C
120°C
5
3
2
0.001
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Collector Current, IC -- A
3
2
10
s
1m
Collector Current, IC -- A
IC=1A
1.0
7
5
DC
0.1
7
5
m
op
er
3
2
s
ati
on
0.01
7
5
3
2
tst
g
5
3
tf
2
3
µs
00
=1
s
PT 00µ
3
ICP=2A
3
2
5 7 1.0
IT12791
2
3
5
7
Collector Current, IC -- A
Forward Bias A S O
5
3
IC / IB1=10
IB2 / IB1=10
R load
7
0.1
0.1
5 7 1.0
IT12792
1.0
IT12793
Reverse Bias A S O
L=500µH
IB2= --0.2A
Tc=25°C
Single pulse
2
1.0
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
2
SW Time -- IC
1.0
IC / IB=5
1.0
5 7 1.0
IT12789
Collector Current, IC -- A
VBE(sat) -- IC
2
3
IC / IB=20
7
5
0.001
5 7 1.0
IT12790
Collector Current, IC -- A
3
3
Collector Current, IC -- A
IC / IB=5
5°C
2
IT12788
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
V
2
5
0.7
3
7
.0V
V 1
5
100
20°
C
--40
°C
--40°C
7
.0V
=5
E
VC
100
DC Current Gain, hFE
25°C
2.0
DC Current Gain, hFE
3
Ta=120°C
2
Ta=
1
3
hFE -- IC
5
VCE=5V
7
5
3
2
0.1
7
5
3
2
Ta=25°C
Single pulse
0.001
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Collector-to-Emitter Voltage, VCE -- V
5 7
IT12794
0.01
100
2
3
5
7
Collector-to-Emitter Voltage, VCE -- V
1000
IT12795
No. A0899-3/4
2SC6083
PC -- Ta
Collector Dissipation, PC -- mW
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12796
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PS No. A0899-4/4