SANYO 2SC6113

2SC6113
Ordering number : ENA1155
SANYO Semiconductors
DATA SHEET
2SC6113
NPN Triple Diffused Planar Silicon Transistor
For 14, 21 inch TV Power Supply
Applications
•
Recommended for use in 14, 21 inch TV power supply.
Features
•
•
•
•
•
High breakdown voltage and high reliability.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
1000
V
Collector-to-Emitter Voltage
VCBO
VCEO
500
V
Emitter-to-Base Voltage
VEBO
7
V
IC
15
A
Collector Current
Collector Current (Pulse)
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤300μs, duty cycle≤10%
Tc=25°C
25
A
3
W
60
W
150
°C
--55 to +150
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908KB TI IM TC-00001309 No. A1155-1/4
2SC6113
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
VCB=500V, IE=0A
VEB=5V, IC=0A
hFE1
hFE2
VCE=5V, IC=1.2A
VCE=5V, IC=6A
fT
Cob
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
min
V
1.5
V(BR)EBO
VCEX(sus)
IE=1mA, IC=0A
IC=2.5A, IB1=--IB2=2A, L=1mH, clamped
V
1000
V
500
V
7
V
500
V
ton
tstg
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
0.5
3.0
μs
tf
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
0.3
μs
Package Dimensions
μs
Switching Time Test Circuit
unit : mm (typ)
7504-001
IB1
PW=20μs
D.C.≤1%
3.4
5.6
INPUT
3.1
8.0
5.0
pF
1.0
V(BR)CEO
OUTPUT
IB2
VR
RB
RL
+
50Ω
22.0
100μF
+
470μF
4.0
0.8
21.0
MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
Emitter-to-Base Breakdown Voltage
16.0
μA
80
80
Collector-to-Emitter Breakdown Voltage
Storage Time
μA
10
18
IC=1mA, IE=0A
IC=5mA, RBE=∞
Fall Time
10
8
V(BR)CBO
Turn-ON Time
Unit
max
40
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
typ
VBE= --5V
2.8
2.0
1
2
20.4
0.7
VCC=200V
2.1
0.9
3
5.45
3.5
1 : Base
2 : Collector
3 : Emitter
5.45
SANYO : TO-3PMLH
IC -- VCE
VCE=5V
12
7
5
400mA
300mA
200mA
4
100mA
6
3
10
8
6
4
2
2
1
IB=0mA
0
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V
9
--40°C
600mA
500mA
Collector Current, IC -- A
Collector Current, IC -- A
9
8
IC -- VBE
14
1000mA
800mA
Ta=
12
25°C 0°C
10
0
10
IT13465
0
0.5
1.0
1.5
2.0
Base-to-Emitter Voltage, VBE -- V
IT13466
No. A1155-2/4
2SC6113
hFE -- IC
Ta=120°C
100
DC Current Gain, hFE
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
25°C
7
5
--40°C
3
2
10
7
5
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Collector Current, IC -- A
1.0
7
5
3
2
C
0°
0.1
7
5
--4
Ta= -40°C
C
25°
120°C
3
2
25°C
2
3
5 7 0.1
2
3
5 7 1.0
3
Switching Time, SW Time -- μs
1.0
Ta= --40°C
25°C
7
120°C
5
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Collector Current, IC -- A
2
3
s
1m
3
2
10
s
m
1.0
7
5
3
2
tf
0.1
2
3
5
7 1.0
2
3
5
7
3
2
0.1
7
5
2
10
3
IT13470
Reverse Bias A S O
Tc=25°C
IB2= --2A
L=1mH
2
s
P
C
DC =60W
op
era
tio
n
5
3
0μ
IC=15A
10
7
5
7
5
10
3
2
3
VCC=200V
IC/IB= 5
IB2/IB1= 2
R Load
Collector Current, IC -- A
<50μs
2
IT13468
1.0
IT13469
ICP=25A
5 7 10
tstg
2
7
5
0.1
Forward Bias A S O
5
3
SW Time -- IC
5
2
2
Collector Current, IC -- A
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
IT13467
IC / IB=5
2
0.01
10
7
5
3
2
1.0
7
5
3
3
2
Tc=25°C
Single pulse
0.01
1.0
2
3
2
0.1
5 7 10
2
3
5 7 100
3
2
Collector-to-Emitter Voltage, VCE -- V
5 7
10
2
3
5
7 100
2
3
5
7 1000
2
IT13472
Collector-to-Emitter Voltage, VCE -- V
IT13475
PC -- Ta
3.5
PC -- Tc
70
3.0
60
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
IC / IB=5
0.01
0.01
3
VBE(sat) -- IC
3
Collector Current, IC -- A
2
VCE(sat) -- IC
10
7
5
VCE=5V
Ta=120
°C
3
2.5
No
2.0
he
at
sin
k
1.5
1.0
0.5
50
40
30
20
10
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13476
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT13477
No. A1155-3/4
2SC6113
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of April, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1155-4/4