Transistor 2SD0638, 2SD0639 (2SD638, 2SD639) Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings 30 VCBO 25 VEBO 7 V ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol 2SD0638 voltage 2SD0639 Collector to emitter 2SD0638 voltage 2SD0639 Emitter to base voltage 1:Base 2:Collector 3:Emitter Conditions ICBO VCB = 20V, IE = 0 ICEO VCE = 20V, IB = 0 min 1.0 max Unit 0.1 µA 1 µA 30 IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 7 *1 typ V 60 25 V 50 V VCE = 10V, IC = 10mA 85 160 hFE2 VCE = 10V, IC = 500mA*2 40 90 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA 0.35 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 340 0.6 V MHz 6 15 *2 *1h FE1 4.5±0.1 2.5 EIAJ:SC–71 M Type Mold Package VCBO hFE1 Forward current transfer ratio 4.1±0.2 7 1 (Ta=25˚C) Parameter Collector to base 2 2.5 Peak collector current Collector cutoff current 3 0.45±0.05 V 50 Emitter to base voltage ■ Electrical Characteristics 0.55±0.1 Unit V 60 VCEO emitter voltage 2SD0639 0.85 (Ta=25˚C) 1.25±0.05 ■ Absolute Maximum Ratings 0. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SD0638, 2SD0639 Transistor IC — VCE 700 700 600 500 400 300 200 100 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 600 500 4mA 400 3mA 300 2mA 200 1mA 80 120 160 200 Ambient temperature Ta (˚C) 4 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 8 16 3 10 3 25˚C 1 Ta=–25˚C 75˚C 0.3 0.1 0.03 0.1 2 0.3 200 1 3 160 120 80 40 Ta=75˚C 200 25˚C –25˚C 150 100 50 Emitter current IE (mA) –100 0.1 0.3 1 3 10 Collector current IC (A) ICEO — Ta 104 VCE=10V 103 8 6 4 102 10 2 1 0 –30 10 250 0 0.01 0.03 10 IE=0 f=1MHz Ta=25˚C 10 8 VCE=10V ICEO (Ta) ICEO (Ta=25˚C) Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 6 300 Cob — VCB 12 4 Base current IB (mA) Collector current IC (A) fT — I E –10 0 hFE — IC 30 0.01 0.01 0.03 10 240 –3 200 20 IC/IB=10 Collector current IC (A) 0 –1 12 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 30 0.1 300 VBE(sat) — IC IC/IB=10 0.3 400 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 500 0 0 Forward current transfer ratio hFE 40 600 100 0 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C 700 100 0 2 IC — IB 800 Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 800 1 3 10 30 100 Collector to base voltage VCB (V) 0 40 80 120 160 200 Ambient temperature Ta (˚C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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