isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1493 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V 2.5 A IC Collector Current-Continuous ICM Collector Current-Peak 5 A PC Collector Power Dissipation @ TC= 25℃ 50 W TJ Junction Temperature 150 ℃ -45~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1493 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A 1.5 V Collector Cutoff Current VCB= 600V; IE= 0 10 μA ICBO isc Website：www.iscsemi.cn CONDITIONS B B 2 MIN TYP. MAX UNIT 800 V 6 V