isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ 40 IC PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 20 hFE-2 DC Current Gain IC= 4A; VCE= 5V 8 isc Website：www.iscsemi.cn CONDITIONS MIN B B 2 TYP. MAX UNIT