2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) • Zener diode included between collector and base Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V IC 2 A 0.5 A Collector current Base current IB Ta = 25°C Collector power dissipation PC Tc = 25°C Junction temperature Storage temperature range 1.5 10 W JEDEC ― JEITA ― Tj 150 °C TOSHIBA 2-8H1A Tstg −55 to 150 °C Weight: 0.82 g (typ.) Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2004-07-26 2SD1658 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 4 mA V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V hFE VCE = 2 V, IC = 1 A 2000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 V VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF ― 0.4 ― ― 4.0 ― ― 0.6 ― fT Collector output capacitance Turn-on time Switching time Storage time Cob ton tstg 20 µs Input IB1 IB2 Output 30 Ω Transition frequency IB2 DC current gain IB1 Collector-emitter breakdown voltage V µs VCC = 30 V Fall time tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% Marking Lot No. D1658 Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SD1658 IC – VCE hFE – IC 10000 2.0 200 Common emitter 185 1.6 VCE = 2 V hFE 3000 DC current gain 180 1.2 175 0.8 IB = 170 µA 0.4 Tc = 100°C 1000 −55 500 300 25 100 50 0 0 0 2 4 6 8 Collector-emitter voltage VCE 30 0.01 10 0.03 (V) 0.1 VCE (sat) – IC 3 Common emitter VCE = 2 V Tc = −55°C 100 1 0.3 5 IC – VBE 25 0.6 3 1 2.0 Common emitter IC/IB = 1000 1 0.3 Collector current IC (A) IC (A) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 5000 Tc = 25°C Collector current Collector current IC (A) 500 250 3 Collector current IC (A) 1.6 1.2 Tc = 100°C −55 0.8 25 0.4 0 0 0.8 1.6 2.4 Base-emitter voltage 3.2 VBE 4.0 (V) PC – Ta 14 (W) PC Common emitter IC/IB = 1000 Collector power dissipation Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC 5 (1) Tc = Ta 3 Tc = −55°C 25 Infinite heat sink (2) No heat sink 12 (1) 8 4 (2) 100 1 0.3 1 0 0 3 Collector current IC (A) 40 80 120 Ambient temperature 3 160 Ta 200 (°C) 2004-07-26 2SD1658 Safe Operating Area 5 3 IC max (pulsed)* IC max (continuous) 100 µs* 10 ms* Collector current IC (A) 1 1 ms* DC operation Tc = 25°C 0.5 0.3 0.1 0.05 0.03 0.01 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 Collector-emitter voltage VCEO max 30 100 VCE (V) 4 2004-07-26 2SD1658 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26