Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 ■ Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw (3.2) 11.0±0.2 16.2±0.5 (3.5) Solder Dip ■ Features 21.0±0.5 (0.7) 15.0±0.3 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 20 A Collector current IC 10 A PC 70 W Collector to base voltage Collector power dissipation TC = 25°C Ta = 25°C 10.9±0.5 1 2 1: Base 2: Collector 3: Emitter EIAJ: SC-96 TOP-3F-A Package 3 3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 50 µA Collector to emitter voltage VCEO IC = 10 mA, IB = 0 80 Forward current transfer ratio hFE1 VCE = 2 V, IC = 0.1 A 45 hFE2 * VCE = 2 V, IC = 3 A 90 hFE3 VCE = 2 V, IC = 6 A 30 VCE(sat)1 IC = 6 A, IB = 0.3 A 0.5 V VCE(sat)2 IC = 10 A, IB = 1 A 1.5 V VBE(sat)1 IC = 6 A, IB = 0.3 A 1.5 V VBE(sat)2 IC = 10 A, IB = 1 A 2.5 V Collector to emitter saturation voltage Base to emitter saturation voltage V 260 Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 6 A, IB1 = 0.6 A, IB2 = − 0.6 A, 0.5 µs Storage time tstg VCC = 50 V 2.0 µs Fall time tf 0.2 µs Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 2SD1705 Power Transistors PC T a IC VCE TC=25˚C IB=400mA 80 (1) 60 40 16 250mA 200mA 160mA 120mA 12 100mA 80mA 60mA 8 40mA 4 20 (2) 20mA (3) 0 0 50 75 100 125 150 0 Ambient temperature Ta (˚C) 2 4 3 1 TC=100˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) Transition frequency fT (MHz) 30 10 3 1 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.1 0.3 1 3 0.03 0.01 0.1 1 3 10 TC=100˚C 25˚C 100 –25˚C 30 10 3 10 30 Non repetitive pulse TC=25˚C 30 ICP 1 ton 0.3 3 Area of safe operation (ASO) tstg 3 1 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=–IB2) VCC=50V TC=25˚C 10 0.3 Collector current IC (A) tf 0.1 t=10ms IC 10 t=1ms 3 DC 1 0.3 0.1 0.03 0.01 10 0.3 300 1 0.1 10 0.03 0.3 Collector current IC (A) 0.1 VCE=2V 10 30 100 3 (1) 1000 ton, tstg, tf IC VCE=10V f=1MHz TC=25˚C 1 0.3 IC/IB=10 30 100 0.3 (2) hFE IC fT I C 0.1 1 Collector current IC (A) 1000 0.1 0.01 0.03 3 VBE(sat) IC 0.01 0.01 0.03 10 12 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C Collector current IC (A) Collector current IC (A) 300 10 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 8 10 Collector to emitter voltage VCE (V) VCE(sat) IC 10 6 Forward current transfer ratio hFE 25 Collector current IC (A) 0 2 Collector to emitter saturation voltage VCE(sat) (V) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=3.0W) 100 VCE(sat) IC 20 Collector current IC (A) Collector power dissipation PC (W) 120 0.01 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1705 Rth(t) t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1)PT=10V×0.2A(2W) and without heat sink (2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR