Power Transistors 2SD1775, 2SD1775A Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio 3.4±0.3 8.5±0.2 Unit: mm 2SD1775 emitter voltage 2SD1775A 100 60 VCEO Emitter to base voltage VEBO 6 V Peak collector current ICP 4 A Collector current IC 2 A Base current IB 0.5 A Collector power TC=25°C dissipation Ta=25°C 25 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 2SD1775 2SD1775A 1.5±0.1 6.0±0.3 1.0±0.1 0.8±0.1 ICBO R0.5 R0.5 0 to 0.4 2.54±0.3 1.1 max. 5.08±0.5 150 ˚C –55 to +150 ˚C Symbol current 3.4±0.3 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Collector cutoff Unit: mm 8.5±0.2 W 1.3 1:Base 2:Collector 3:Emitter N Type Package 3 V V 80 2 14.7±0.5 Collector to 1 80 VCBO 5.08±0.5 +0.4 2SD1775A 2.54±0.3 Unit 3.0–0.2 base voltage Ratings 0.5max. 4.4±0.5 2SD1775 2.0 (TC=25˚C) Symbol Collector to 0.8±0.1 +0 Parameter 1.1max. 1.5–0.4 ■ Absolute Maximum Ratings 1.5max. 10.0±0.3 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.0±0.1 2.0 ● 4.4±0.5 ● 10.5min. ■ Features 10.0±0.3 6.0±0.5 Conditions min typ max VCB = 80V, IE = 0 100 VCB = 100V, IE = 0 100 Unit µA Collector cutoff current ICEO VCE = 40V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA VCEO IC = 25mA, IB = 0 Forward current transfer ratio hFE* VCE = 4V, IC = 300mA Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 25mA Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 25mA Transition frequency fT VCE = 12V, IC = 200mA, f = 10MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter 2SD1775 voltage 2SD1775A *h FE IC = 1A, IB1 = 25mA, IB2 = –25mA, VCC = 50V 60 V 80 1500 500 1.0 1.2 V V 40 MHz 30 pF 0.6 µs 2.5 µs 1.0 µs Rank classification Rank hFE Q P 500 to 1000 800 to 1500 1 Power Transistors 2SD1775, 2SD1775A IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=1.3W) 35 30 (1) 25 TC=25˚C 1.4 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 1.6 20 15 (2) 10 2mA 1.0 0.8 1mA 0.8mA 0.6 0.6mA 0.4mA 0.4 0.2mA (3) 5 IB=3mA 1.2 0.2 0.1mA (4) 0 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 TC=100˚C 25˚C 1000 100˚C 25˚C 0.1 0.03 1 –25˚C 300 100 30 10 0.01 0.03 3 Collector current IC (A) 3 tf ton 0.3 0.1 1.0 1.5 2.0 Collector current IC (A) 2 0.03 0.01 0.01 0.03 0.1 0.3 1 2.5 3 VCE=12V f=10MHz TC=25˚C 300 100 30 10 3 1 ICP t=10ms IC 1ms 1 300ms 0.3 0.1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 3 0.01 0.01 0.5 10 10 0.03 0.03 0 3 Non repetitive pulse TC=25˚C 30 2SD1775 tstg 1 1 100 Collector current IC (A) Switching time ton,tstg,tf (µs) 10 0.3 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=–IB2) VCC=50V TC=25˚C 30 0.1 Collector current IC (A) ton, tstg, tf — IC 100 –25˚C 0.1 0.3 2SD1775A 0.3 0.3 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30000 3000 TC=–25˚C 0.1 25˚C fT — IC 10000 0.03 1 VCE=4V 3 0.01 0.01 TC=100˚C 1000 IC/IB=40 0.3 3 hFE — IC 100000 1 IC/IB=40 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1775, 2SD1775A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3