Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.15 ● 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Allowing supply with the radial taping. 1.0 ● 0.85 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 +0.1 2.5±0.5 2.5±0.5 (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 0.45–0.05 0.45–0.05 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.5±0.1 1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Collector cutoff current Conditions min typ max Unit ICBO VCB = 20V, IE = 0 100 nA ICEO VCE = 20V, IB = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 Forward current transfer ratio hFE* VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 200 MHz Noise voltage NV 80 mV *h FE VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT V 2000 0.2 V Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 2SD1995 Transistor PC — Ta IC — VCE 120 200 100 120 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 20 Collector current IC (mA) 300 60 80 100 120 140 160 2 4 6 8 10 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 30 0.4 100 300 25˚C 600 –25˚C 400 200 –1 Cob — VCB –3 –10 –30 200 150 100 50 0 – 0.1 – 0.3 –100 –1 Noise voltage NV (mV) 6 5 4 3 2 –3 3 10 30 100 Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C Collector to base voltage VCB (V) 0 1 3 –100 NV — VCE 0 1 –30 100 1 0 –10 Emitter current IE (mA) VCE=10V GV=80dB Function=FLAT Ta=25˚C 80 2.0 VCB=10V Ta=25˚C NV — IC 100 IE=0 f=1MHz Ta=25˚C 1.6 VCE=10V Collector current IC (mA) 8 1.2 fT — I E 800 0 – 0.1 – 0.3 1000 0.8 Base to emitter voltage VBE (V) 250 Collector current IC (mA) 7 0 Transition frequency fT (MHz) 10 10 12 1000 Forward current transfer ratio hFE 30 3 40 hFE — IC Ta=75˚C 1 60 Collector to emitter voltage VCE (V) IC/IB=10 0.1 80 0 0 VCE(sat) — IC 100 –25˚C 20 Noise voltage NV (mV) 40 Ta=75˚C 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 500 10 30 Collector current IC (mA) 100 1 3 10 30 100 Collector to emitter voltage VCE (V)