Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 ■ Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. • High forward current transfer ratio hFE • Allowing supply with the radial taping +0.1 2.5±0.5 1 Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −7 V Peak collector current ICP −200 mA Collector current IC −100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 2.5±0.1 Parameter 2.5±0.5 +0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.45−0.05 0.45−0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = −20 V, IE = 0 −1 µA ICEO VCE = −20 V, IB = 0 −1 µA Collector to base voltage VCBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 VCE = −10 V, IC = −2 mA 160 Collector cutoff current Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency hFE VCE(sat) fT Collector output capacitance Cob V 460 IC = −100 mA, IB = −10 mA −1 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF Note) *: Rank classification Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Product of no-rank is not classified and have no indication for rank. 1 2SB1320A Transistors PC Ta IC VCE −120 Ta = 25°C 200 100 −50 −80 IB = −300 µA −60 −250 µA −200 µA −40 −150 µA −100 µA −20 20 40 60 0 80 100 120 140 160 −2 0 −4 −240 Collector current IC (mA) Base current IB (µA) −250 −200 25°C Ta = 75°C −120 −150 −100 −50 −1.2 Base to emitter voltage VBE 160 Transition frequency fT (MHz) Forward current transfer ratio hFE Ta = 75°C 25°C −25°C 200 100 − 0.4 0 − 0.8 −1.2 −1.6 −10 −30 −100 −300 −1 000 Collector current IC (mA) 2 −1 Ta = 75°C 25°C −25°C −2.0 − 0.001 −1 (V) 100 80 60 40 1 −30 −100 −300 −1 000 Cob VCB 120 0.3 −10 8 VCB = −10 V Ta = 25°C 0 0.1 −3 Collector current IC (mA) 20 −3 −3 fT I E 500 0 −1 IC / IB = 10 − 0.003 Base to emitter voltage VBE 140 300 −10 − 0.01 (V) VCE = −5 V −400 − 0.03 hFE IC 600 −300 − 0.1 −80 0 −1.6 −200 Base current IB (µA) Collector output capacitance Cob (pF) − 0.8 −100 − 0.3 −25°C −40 − 0.4 0 VCE(sat) IC VCE = −5 V −160 0 0 −12 −200 −300 400 −10 −20 IC VBE VCE = −5 V Ta = 25°C −350 −8 −30 Collector to emitter voltage VCE (V) IB VBE −400 −6 −40 −10 −50 µA Collector to emitter saturation voltage VCE(sat) (V) 0 Ambient temperature Ta (°C) 0 VCE = −5 V Ta = 25°C Collector current IC (mA) 300 0 IC I B −60 −100 400 Collector current IC (mA) Collector power dissipation PC (mW) 500 3 10 30 Emitter current IE (mA) 100 IE = 0 f = 1 MHz Ta = 25°C 7 6 5 4 3 2 1 0 −1 −2 −3 −5 −10 −20−30 −50 −100 Collector to base voltage VCB (V) Transistors 2SB1320A NF IE IE = 1 mA f = 10.7 MHz Ta = 25°C VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 4 3 2 4 3 2 14 12 f = 100 Hz 10 1 kHz 8 10 kHz 6 4 2 0 −5 −10 −15 −20 −25 0 − 0.01 − 0.03 − 0.1 − 0.3 −30 Emitter current IE (mA) h Parameter IE h Parameter VCB 300 200 hfe hfe 50 50 h Parameter 100 hoe (µS) 20 10 5 −3 Collector to emitter voltage VCE (V) 100 30 −1 10 2 hre (×10−4) 1 − 0.1 − 0.2− 0.3− 0.5 −1 −2 −3 −5 Emitter current IE (mA) −10 –10 VCB = −10 V 50 30 hoe (µS) 2 100 IE = −2 mA f = 270 Hz Ta = 25°C 20 3 −2 −3 −5 ICBO Ta 5 hie (kΩ) −1 Emitter current IE (mA) 30 3 0 − 0.1 − 0.2− 0.3 − 0.5 −10 ICBO (Ta) ICBO (Ta = 25°C) 0 300 VCB = −5 V f = 270 Hz 200 Ta = 25°C h Parameter 16 1 1 VCB = −5 V Rg = 50 kΩ Ta = 25°C 18 Noise figure NF (dB) 5 NF IE 20 6 Noise figure NF (dB) Common emitter reverse transfer capacitance Cre (pF) Cre VCE 6 5 2 hie (kΩ) −2 −3 −5 10 3 hre (×10−4) 1 −1 20 −10 −20−30 −50 −100 Collector to vase voltage VCB (V) 1 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3