Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 ● 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 1.6±0.1 ● 1.0±0.1 ● 0.4 0.2–0.05 ■ Features Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics Parameter 1:Base 2:Emitter 3:Collector +0.1 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : 1Z (Ta=25˚C) Symbol Collector cutoff current 0 to 0.1 Parameter 0.15–0.05 (Ta=25˚C) 0.75±0.15 ■ Absolute Maximum Ratings 0.45±0.1 0.3 2 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 120 *h FE 2000 0.2 V MHz Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 2SD2345 Transistor PC — Ta IC — VCE 120 100 75 50 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 25 20 60 80 100 120 140 160 2 4 6 8 10 12 0.3 Ta=75˚C 25˚C –25˚C 0.03 10 30 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 100 0.3 Cob — VCB 1 3 10 30 150 100 50 0 – 0.1 – 0.3 100 –1 IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) 4 3 2 80 –3 1 3 10 30 100 Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C Collector to base voltage VCB (V) 0 0.03 –100 NV — VCE VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 –30 100 1 0 –10 Emitter current IE (mA) Noise voltage NV (mV) 100 2.0 200 NV — IC 8 5 1.6 VCB=10V Ta=25˚C Collector current IC (mA) 6 1.2 250 Collector current IC (mA) 7 0.8 VCE=10V Forward current transfer ratio hFE 1 3 0.4 Base to emitter voltage VBE (V) 1800 1200 3 1 0 fT — I E 1500 10 0.3 40 hFE — IC 30 0.01 0.1 60 Collector to emitter voltage VCE (V) IC/IB=10 0.1 80 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 120 Collector current IC (mA) 125 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 150 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V)