ETC PDM41257LA8SO

PDM41257
256K Static RAM
256K x 1-Bit
Description
Features
n
High-speed access times
Com’l: 7, 8, 10, 12 and 15 ns
Industrial: 8, 10, 12 and 15 ns
n
Low power operation (typical)
- PDM41257SA
Active: 400 mW
Standby: 150 mW
- PDM41257LA
Active: 350 mW
Standby: 25 mW
n
n
n
1
The PDM41257 is a high-performance CMOS static
RAM organized as 262,144 x 1 bit. Writing to this
device is accomplished when the write enable (WE)
and the chip enable (CE) inputs are both LOW.
Reading is accomplished when WE remains HIGH
and CE goes LOW.
The PDM41257 operates from a single +5V power
supply and all the inputs and outputs are fully TTLcompatible. The PDM41257 comes in two versions,
the standard power version PDM41257SA and a low
power version the PDM41257LA. The two versions
are functionally the same and only differ in their
power consumption.
Single +5V (±10%) power supply
TTL compatible inputs and outputs
Packages
Plastic SOJ (300 mil) - SO
The PDM41257 is available in a 24-pin 300-mil
plastic SOJ for surface mount applications.
2
3
4
5
6
7
Functional Block Diagram
A0
•
•
Addresses •
•
•
A17
Decoder
•
•
•
•
•
8
Memory
Matrix
9
• • • • •
DIN
Column I/O
DOUT
10
CE
11
WE
12
Rev. 2.2 - 4/27/98
1
PDM41257
Pin Configuration
Pin Description
SOJ
Name
Description
A17
A17-A0
Address Inputs
A16
DIN
Data Input
A15
DOUT
Data Output
A14
WE
Write Enable Input
A13
CE
Chip Enable Input
VCC
Power (+5V)
VSS
Ground
A0
1
24
Vcc
A2
3
22
A1
A3
A4
A5
A6
A7
A8
DOUT
WE
Vss
23
2
21
4
20
5
6
19
18
7
8
17
16
9
10
15
11
14
12
13
A12
A11
A10
A9
DIN
CE
Truth Table
WE
CE
DOUT
MODE
X
H
Hi-Z
Standby
H
L
DOUT
Read
L
L
Hi-Z
Write
NOTE: 1. H = VIH, L = VIL, X = DON’T CARE
Absolute Maximum Ratings (1)
Symbol
Rating
TTERM
Terminal Voltage with Respect to VSS
TBIAS
Temperature Under Bias
TSTG
Storage Temperature
Com’l.
Ind.
Unit
–0.5 to +7.0
–0.5 to +7.0
°C
–55 to +125
–65 to +135
°C
–55 to +125
–65 to +150
°C
PT
Power Dissipation
1.0
1.0
W
IOUT
DC Output Current
50
50
mA
Tj
Maximum Junction Temperature (2)
125
145
°C
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The
calculation should be of the form: Tj = Ta + P * θja, where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For
this product, use the following θja value:
SOJ: 83o C/W
2
Rev. 2.2 - 4/27/98
PDM41257
Recommended DC Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
VSS
Supply Voltage
0
0
0
V
Commercial
Ambient Temperature
0
25
70
°C
Industrial
Ambient Temperature
–40
25
85
°C
1
2
3
DC Electrical Characteristics (VCC = 5.0V ± 10%)
PDM41257SA
PDM41257LA
Min.
Max.
Min.
Max.
Unit
Symbol
Parameter
Test Conditions
ILI
Input Leakage Current
VCC = MAX., VIN = VSS to VCC
Com’l/
Ind.
–5
5
–5
5
µA
ILO
Output Leakage Current
VCC= MAX.,
CE = VIH, VOUT = VSS to VCC
Com’l/
Ind.
–5
5
–5
5
µA
0.8
V
VIL
Input Low Voltage
–0.5
(1)
0.8
–0.5
(1)
VIH
Input High Voltage
2.2
6.0
2.2
6.0
V
VOL
Output Low Voltage
IOL = 8 mA, VCC = Min.
IOL = 10 mA, VCC = Min.
—
—
0.4
0.5
—
—
0.4
0.5
V
V
VOH
Output High Voltage
IOH = –4 mA, VCC = Min.
2.4
—
2.4
—
V
4
5
6
7
NOTE: 1. VIL(min) = –3.0V for pulse width less than 20 ns.
Power Supply Characteristics
-7
Symbol Parameter
ICC
ISB
ISB1
-8
-10
-12
8
-15
Power
Com’l.
Com’l.
Ind.
Com’l.
Ind.
Com’l.
Ind.
Com’l.
Ind.
Units
Operating Current
CE = VIL
SA
210
200
210
190
200
180
190
170
180
mA
f = fMAX = 1/tRC
VCC = Max
IOUT = 0 mA
LA
190
180
190
170
180
160
170
150
160
mA
Standby Current
CE = VIH
SA
90
80
80
70
70
60
60
50
50
mA
f = fMAX = 1/tRC
VCC = Max
LA
90
80
80
70
70
60
60
50
50
mA
Full Standby Current
CE ≥ VCC – 0.2V
SA
20
20
20
20
20
20
20
20
20
mA
f=0
VCC = Max
VIN ≥ VCC – 0.2V or ≤ 0.2V
LA
5
5
5
5
5
5
5
5
5
mA
9
10
11
12
SHADED AREA = PRELIMINARY DATA
NOTE: All values are maximum guaranteed values.
Rev. 2.2 - 4/27/98
3
PDM41257
Capacitance(1) (TA = +25°C, f = 1.0 MHz)
Symbol
Parameter
Conditions
CIN
Input Capacitance
COUT
Output Capacitance
Max.
Unit
VIN = 0V
8
pF
VOUT = 0V
8
pF
NOTE: 1. This parameter is determined by device characterization but is not production tested.
AC Test Conditions
Input Pulse Levels
VSS to 3.0V
Input rise and fall times
3 ns
Input timing reference levels
1.5V
Output reference levels
1.5V
Output load
See Figures 1 and 2
+5V
+5V
480Ω
480Ω
DOUT
DOUT
255Ω
30 pF
Figure 1. Output Load Equivalent
255Ω
5 pF
Figure 2. Output Load Equivalent
Delta tAA - nS
(for tLZCE, tHZCE, tLZWE, tHZWE)
4
Typical Delta tAA vs Capacitive Loading
5
4
3
2
1
0
0
30
60
90
120
Additional Lumped Capacitive Loading (pF)
Rev. 2.2 - 4/27/98
PDM41257
Read Cycle No. 1(1)
1
t RC
ADDR
t AA
2
t OH
DOUT PREVIOUS DATA VALID
DATA VALID
3
Read Cycle No. 2(2)
4
tRC
ADDR
tAA
5
tACE
CE
tHZCE
tLZCE
tLZOE
6
tHZOE
DOUT
DATA VALID
tAOE
7
8
AC Electrical Characteristics
-7(6)
Description
READ Cycle
-8(6)
-10(6)
-12
-15
Sym
Min.
READ cycle time
tRC
7
Address access time
tAA
7
8
10
12
15
ns
Chip enable access time
tACE
7
8
10
12
15
ns
Output hold from address change
Max.
Min.
Max.
8
Min.
Max.
10
Min.
Max.
12
Min.
Max.
15
Units
tOH
3
3
3
3
3
ns
Chip enable to output in low Z(3, 4, 5)
tLZCE
5
5
5
5
5
ns
Chip disable to output in high Z(3, 4, 5)
tHZCE
Chip enable to power up time
(4)
Chip disable to power down time(4)
tPU
tPD
5
0
5
0
7
10
0
8
10
0
10
10
0
12
9
ns
10
ns
11
ns
15
ns
SHADED AREA = PRELIMINARY DATA.
Notes referenced are after Data Retention Table.
Rev. 2.2 - 4/27/98
12
5
PDM41257
Write Cycle No. 1 (Write Enable Controlled)
t WC
ADDR
t AW
CE
t
WE
t AH
t CW
t WP
AS
t DH
t DS
DIN
DATA VALID
t HZWE
t LZWE
HIGH Z
DOUT
Write Cycle No. 2 (Chip Enable Controlled)
t WC
ADDR
t AW
tAS
CE
tCW
t AH
t WP
WE
UNDEFINED
t DS
DIN
t DH
DATA VALID
DON'T CARE
AC Electrical Characteristics
-7(6)
Description
-8(6)
-10(6)
-12
-15
WRITE Cycle
Sym
Min.
WRITE cycle time
tWC
7
8
10
12
15
ns
Chip enable to end of write
tCW
7
8
10
10
12
ns
Address valid to end of write
tAW
7
8
10
10
12
ns
Address setup time
tAS
0
0
0
0
0
ns
Address hold from end of write
tAH
0
0
0
0
0
ns
Write pulse width
tWP
7
8
10
10
11
ns
Data setup time
tDS
6
7
7
7
8
ns
Data hold time
tDH
0
0
0
0
0
ns
(4,5)
tLZWE
0
0
0
0
0
ns
(4,5)
tHZWE
Write disable to output in low Z
Write enable to output in high Z
Max.
3
Min.
Max.
3
Min.
Max.
3
Min.
Max.
3
Min.
Max.
3
Units
ns
SHADED AREA = PRELIMINARY DATA
6
Rev. 2.2 - 4/27/98
PDM41257
Low VCC Data Retention Waveform
Data Retention Mode
V CC
4.5V
CE
4.5V
VDR
t CDR
1
tR
2
VDR
VIH
V IL
DON'T CARE
3
Data Retention Electrical Characteristics (LA Version Only)
Symbol
Parameter
Test Conditions
VDR
VCC for Retention Data
ICCDR
Data Retention Current
CE ≥ VCC – 0.2V
VIN ≥ VCC – 0.2V
or ≤ 0.2V
tCDR
Chip Deselect to Data Retention Time
tR(4)
Operation Recovery Time
Min.
Typ.
Max.
Unit
2
—
—
V
VCC = 2V
—
95
500
µA
VCC = 3V
—
350
750
µA
0
—
—
ns
tRC
—
—
ns
4
5
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage.
6. VCC = 5V ± 5%.
XXXXX
X
Power
XX
Speed
X
X
X
Package
Type
Process
Temp. Range
Preferred
Shipping
Container
Blank
TR
TY
Tubes
Tape & Reel
Tray
Blank
I
A
Commercial (0° to +70°C)
Industrial (–40°C to +85°C)
SO
9
10
Automotive ( –40°C to +105°C)
24-pin 300-mil Plastic SOJ
7
8
10
12
15
Commercial Only
SA
LA
Standard Power
Low Power
11
12
PDM41257 - 256K (256Kx1) Static RAM
Faster Memories for a Faster World ™
Rev. 2.2 - 4/27/98
7
8
Ordering Information
Device Type
6
7