Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 90˚ 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Collector power dissipation (TC = 25°C) PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 3 2.05±0.2 • Low collector to emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 4.5±0.2 3.8±0.2 10.8±0.2 ■ Features Parameter 7.5±0.2 1: Base 2: Collector 3: Emitter MT-3 (MT3 Type Package) 2.5±0.2 2.5±0.2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions ICBO VCB = 80 V, IE = 0 Min Typ Max Unit 100 µA ICEO VCE = 40 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6 V, IC = 0 100 µA Collector to emitter voltage VCEO Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency IC = 25 mA, IB = 0 60 hFE VCE = 4 V, IC = 0.5 A 500 VCE(sat) IC = 2 A, IB = 0.05 A fT VCE = 12 V, IC = 0.2 A, f = 200 MHz V 2 500 1.0 50 V MHz Note) *: Rank classification Rank hFE P Q R 500 to 1 000 800 to 1 500 1 200 to 2 500 1 2SD2573 Power Transistors IC VCE Ta=25˚C 3.0 1.6 Collector current IC (A) Collector power dissipation PC (W) Without heat sink 1.2 0.8 0.4 IB=5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.4 1.8 2.0mA 1.5mA 1.2 1.0mA 0.5mA 0.6 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 hFE IC 10 12 Cob VCB VCE=4V 2000 Ta=75˚C 1600 Ta=25˚C 1200 Ta=–25˚C 400 0 Collector output capacitance Cob (pF) 90 800 8 Collector to emitter voltage VCE (V) 2400 Forward current transfer ratio hFE 10 IC/IB=40 3 1 Ta=75˚C 0.3 0.1 Ta=25˚C 0.03 0.01 Ta=–25˚C 0.003 0 IE=0 f=1MHz Ta=25˚C 75 60 45 30 15 0 1 10 100 Collector current IC (mA) 2 VCE(sat) IC 3.6 Collector to emitter saturation voltage VCE(sat) (V) PC T a 2.0 1000 1 10 100 Collector to base voltage VCB (V) 0.001 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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