2SD467 Silicon NPN Epitaxial REJ03G0765-0200 (Previous ADE-208-1134) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB561 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC iC(peak) PC Ratings 25 20 5 0.7 1.0 0.5 Unit V V V A A W Tj Tstg 150 –55 to +150 °C °C 2SD467 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE*1 Min 25 20 5 — 85 Typ — — — — — Max — — — 1.0 240 Unit V V V µA Collector to emitter saturation voltage VCE(sat) — 0.19 0.5 V IC = 0.5 A, IB = 0.05 A (Pulse test) Base to emitter voltage VBE — 0.76 1.0 V VCE = 1 V, IC = 0.15 A (Pulse test) Gain bandwidth product fT — 280 — MHz — 12 — pF Collector output capacitance Cob Note: 1. The 2SD467 is grouped by hFE as follows. B C 85 to170 120 to 240 Rev.2.00 Aug 10, 2005 page 2 of 5 Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCB = 10 V, IE = 0, f = 1 MHz 2SD467 Main Characteristics Typical Output Characteristics 500 0.6 50 100 150 1.0 200 0.5 mA 100 0 0.4 0.8 1.2 1.6 2.0 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 5,000 1,000 DC Current Transfer Ratio hFE VCE = 1 V Collector Current IC (mA) 1.5 IB = 0 0 300 100 30 Ta = 75°C 25°C 10 3 VCE = 1 V Pulse 2,000 1,000 500 Ta = 75°C 200 25°C 100 50 20 10 5 1 0.2 0.6 0.4 0.8 3 10 30 100 300 1,000 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current 0.5 IC = 10 IB 0.4 0.3 0.2 Ta = 75°C 0.1 25°C 0 1 1 1.0 3 10 30 100 300 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 1,000 Gain Bandwidth Product fT (MHz) 0 Collector to Emitter Saturation Voltage VCE(sat) (V) 300 W 0.2 2.0 5 0. 0.4 400 = Collector Current IC (mA) 2.5 PC Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve 400 VCE = 1 V 300 200 100 0 10 20 50 100 200 500 1,000 Collector Current IC (mA) 2SD467 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 500 f = 1 MHz IE = 0 200 100 50 20 10 5 0.5 1.0 2 5 10 20 50 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD467 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD467BTZ-E 2SD467CTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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