Product Specification PE42510A SPDT High Power UltraCMOS™ RF Switch 30 - 2000 MHz Product Description The following specification defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™ process and it also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance. The PE42510A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 2. Package Type Figure 1. Functional Diagram 32-lead 5x5 mm QFN RFC RF1 Features • No blocking capacitors required • 50 Watt P1dB compression point • 10 Watts <8:1 VSWR (Normal Operation) • 29 dB Isolation @800 MHz • < 0.3 dB Insertion Loss at 800 MHz • 2fo and 3fo < -84 dBc @ 42.5 dBm • ESD rugged to 2.0 kV HBM • 32-lead 5x5 mm QFN package RF2 CMOS Control Driver and ESD CTRL Table 1. Electrical Specifications @ 25 °C, VDD = 3.3 V (ZS = ZL = 50 Ω) unless otherwise noted Parameter Typ Max Units RF Insertion Loss 30 MHz ≤ 1 GHz 1 GHz < 2 GHz Conditions 0.4 0.5 0.6 0.7 dB dB 0.1 dB Input Compression Point 800 MHz, 50% duty cycle 45.4 dBm Isolation (Supply Biased): RF to RFC 800 MHz 25 29 dB Unbiased Isolation: RF - RFC, VDD, V1=0 V 27 dBm, 800 MHz 5 RF (Active Port) Return Loss 2nd Harmonic 3rd Harmonic Min 15 800 MHz @ +42.5 dBm Switching Time 50% of CTRL to 10/90% of RF Lifetime switch cycles No RF applied dB 22 dB -84 -81 0.04 0.5 10^10 dBc ms cycles Note: The device was matched with 1.6 nH inductance per RF port Document No. 70-0266-01 │ www.psemi.com ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 7 PE42510A Product Specification GND RF1 GND GND GND GND RFC GND GND GND 32 31 30 29 28 27 26 25 Figure 3. Pin Configuration (Top View) 1 GND 3 GND 4 RF2 RF Input Power (VSWR ≤ 8:1) 22 GND VDD Power Supply Voltage 21 GND 16 N/C GND 15 17 GND 8 14 GND GND GND 13 18 CTRL 7 12 GND VDD GND 11 19 N/C 6 10 GND Table 2. Pin Descriptions Pin No. Pin Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 paddle GND RF1 GND GND GND GND GND GND GND GND N/C VDD CTRL GND GND N/C GND GND GND GND GND GND RF2 GND GND GND GND RFC GND GND GND GND GND Ground RF1 port Ground Ground Ground Ground Ground Ground Ground Ground No Connect Nominal 3.3 V supply connection Control Ground Ground Do Not Connect Ground Ground Ground Ground Ground Ground RF2 port. Ground Ground Ground Ground Common RF port for switch Ground Ground Ground Ground Exposed ground paddle Moisture Sensitivity Level The Moisture Sensitivity Level rating for the 5x5 QFN package is MSL3. ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 7 Max Units 2000 MHz 40 dBm 2 3.2 IDD Power Supply Current 27 dBm 3.3 3.4 V 90 170 uA 1.4 V Control Voltage Low Operating temperature range (Case) Tj Operating junction temperature 0.4 V 85 °C 140 °C -40 Notes: 1. Supply biased 2. Supply unbiased Table 4. Absolute Maximum Ratings Symbol Description Typ 30 RF Input Power1 (VSWR ≤ 8:1) 20 GND GND Frequency Range Control Voltage High 9 5 Exposed Ground Paddle Min GND 23 GND GND Parameter 24 2 Table 3. Operating Ranges VDD VI TST TCASE Tj PIN Parameter/Conditions Min Max Units Power supply voltage -0.3 Voltage on any DC input -0.3 Storage temperature range Maximum case temperature Peak maximum junction temperature (10 seconds max) RF Input power (VSWR 20:1, 10 seconds) -65 RF Input Power (50Ω) RF Input Power, unbiased (VSWR 20:1) Maximum Power Dissipation due to RF Insertion Loss ESD Voltage (HBM, MIL_STD 883 Method 3015.7) PD VESD 4 VDD+ 0.3 150 85 V °C °C 200 °C 40 dBm 45 dBm 27 dBm 2.2 W 2000 V V Absolute Maximum Ratings Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESDsensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. Table 5. Control Logic Truth Table Path CTRL RFC – RF1 H RFC – RF2 L Document No. 70-0266-01 │ UltraCMOS™ RFIC Solutions PE42510A Product Specification Figure 4. Evaluation Board Layouts Evaluation Kit Peregrine Specification 101/0314 The PE42510A Evaluation Kit board was designed to ease customer evaluation of the PE42510A RF switch. DC power is supplied through J10, with VDD on pin 9, and GND on the entire lower row of even numbered pins. To evaluate a switch path, add or remove jumpers on CTRL/V1 (pin 3) using Table 5 (adding a jumper pulls the CMOS control pin low and removing it allows the on-board pull-up resistor to set the CMOS control pin high). J10 pins 1, 11, and 13 are N/C. The RF common port (RFC) is connected through a 50 Ohm transmission line via the top SMA connector, J1. RF1 and RF2 paths are also connected through 50 Ohm transmission lines via SMA connectors. A 50 Ohm through transmission line is available via SMA connectors J8 and J9. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. An open-ended 50 Ohm transmission line is also provided at J7 for calibration if needed. Figure 5. Evaluation Board Schematic Peregrine Specification 102/0383 J1 SMA 1 2 3 4 5 6 7 8 NC RF1 NC NC NC GND NC NC U1 QFN5X5-32LD PE42510 NC RF2 NC NC NC NC GND NC J3 SMA 24 23 22 21 20 19 18 17 1 9 10 11 12 13 14 15 16 NC NC (Res) Vdd V1 NC NC (vss) 2 1 2 J2 SMA GND NC NC NC RFC NC NC GND 32 31 30 29 28 27 26 25 1 2 R1 1M J10 HEADER14 J7 SMA-DNI Z1 Open Line 1 1 3 5 7 9 11 13 2 4 6 8 10 12 14 2 4 6 8 10 12 14 2 1 1 3 5 7 9 11 13 J8 SMA-DNI Document No. 70-0266-01 │ www.psemi.com J9 SMA-DNI C2 DNI 1 C3 DNI C4 0.01u C7 100pF C8 0.01u 2 Through Line 2 1 ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 7 PE42510A Product Specification Figure 6. RF-RFC Insertion Loss, VDD = 3.3V Figure 9. RFC-RF Isolation, +25 °C Figure 7. RF-RFC Insertion Loss, +25 °C Figure 10. RF Return Loss, VDD = 3.3V Figure 8. RFC-RF Isolation, VDD = 3.3V Figure 11. RF Return Loss, +25 °C ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 7 Document No. 70-0266-01 │ UltraCMOS™ RFIC Solutions PE42510A Product Specification Thermal Data Though the insertion loss for this part is very low, when handling high power RF signals, the part can get quite hot. Figure 12. Power Dissipation 2.5 1: 1 V SWR (50 Ohm Load) Note that both of these charts assume that the case (GND slug) temperature is held at 85C. Special consideration needs to be made in the design of the PCB to properly dissipate the heat away from the part and maintain the 85C maximum case temperature. It is recommended to use best design practices for high power QFN packages: multi-layer PCBs with thermal vias in a thermal pad soldered to the slug of the package. Special care also needs to be made to alleviate solder voiding under the part. Table 6. Theta JC Parameter Theta JC (+85°C) Min Typ 24.0 Max Units C/W Pow er Dissipated (W) Figure 13 shows the estimated maximum junction temperature of the part for similar conditions. 2: 1 V SWR (25 Ohm Load) 2.0 8: 1 V SWR (6. 25 Ohm Load) 20: 1 V SWR (2. 5 Ohm Load) I NF: 1 V SWR (0 Ohm Load) 1.5 Rel i abi l i t y Li mi t 1.0 0.5 0.0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 RF Pow er (dBm) Figure 13. Maximum Junction Temperature 145 Max Junction Temperature (C) Figure 12 shows the estimated power dissipation for a given incident RF power level. Multiple curves are presented to show the effect of poor VSWR conditions. VSWR conditions that present short circuit loads to the part can cause significantly more power dissipation than with proper matching. 140 135 130 125 120 115 1: 1 V SWR (50 Ohm Load) 2: 1 V SWR (25 Ohm Load) 8: 1 V SWR (6. 25 Ohm Load) 20: 1 V SWR (2. 5 Ohm Load) I NF: 1 V SWR (0 Ohm Load) Rel i abi l i t y Li mi t 110 105 100 95 90 85 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 RF Power (dBm) Note: Case temperature = 85°C Document No. 70-0266-01 │ www.psemi.com ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 7 PE42510A Product Specification Figure 14. Package Drawing See Note below Note: Not for electrical connection. Corner detail is tied to paddle and should not be isolated on PCB board. Figure 15. Tape and Reel Specs Table 7. Ordering Information Order Code Part Marking Description Package Shipping Method PE42510AMLI 42510 Parts in Tubes or Cut Tape Green 32-lead 5x5mm QFN 73 units / Tube PE42510AMLI-Z 42510 Parts on Tape and Reel Green 32-lead 5x5mm QFN 3000 units / T&R EK42510-01 42510 Evaluation Kit Evaluation Kit 1 / Box ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 7 Document No. 70-0266-01 │ UltraCMOS™ RFIC Solutions PE42510A Product Specification Sales Offices The Americas Peregrine Semiconductor Corporation Peregrine Semiconductor, Asia Pacific (APAC) 9380 Carroll Park Drive San Diego, CA 92121 Tel: 858-731-9400 Fax: 858-731-9499 Shanghai, 200040, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652 Europe Peregrine Semiconductor Europe Bâtiment Maine 13-15 rue des Quatre Vents F-92380 Garches, France Tel: +33-1-4741-9173 Fax : +33-1-4741-9173 Space and Defense Products Peregrine Semiconductor, Korea #B-2607, Kolon Tripolis, 210 Geumgok-dong, Bundang-gu, Seongnam-si Gyeonggi-do, 463-943 South Korea Tel: +82-31-728-3939 Fax: +82-31-728-3940 Peregrine Semiconductor K.K., Japan Teikoku Hotel Tower 10B-6 1-1-1 Uchisaiwai-cho, Chiyoda-ku Tokyo 100-0011 Japan Tel: +81-3-3502-5211 Fax: +81-3-3502-5213 Americas: Tel: 858-731-9453 Europe, Asia Pacific: 180 Rue Jean de Guiramand 13852 Aix-En-Provence Cedex 3, France Tel: +33-4-4239-3361 Fax: +33-4-4239-7227 For a list of representatives in your area, please refer to our Web site at: www.psemi.com Data Sheet Identification Advance Information The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a DCN (Document Change Notice). Document No. 70-0266-01 │ www.psemi.com The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS, HaRP and MultiSwitch are trademarks of Peregrine Semiconductor Corp. ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 7