2SD668, 2SD668A Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD668 2SD668A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 5 5 V Collector current IC 50 50 mA Collector peak current IC(peak) 100 100 mA Collector power dissipation PC 1 1 W Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C 2SD668, 2SD668A Electrical Characteristics (Ta = 25°C) 2SD668 2SD668A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V IE = 10 µA, IC = 0 — — 10 — — 10 µA VCB = 160 V, IE = 0 60 — 320 60 — 200 VCE = 5 V, IC = 10 mA hFE2 30 — — 30 — — VCE = 5 V, IC = 1 mA VCE(sat) — — 2 — — 2 V IC = 30 mA, IB = 3 mA Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 10 mA Gain bandwidth product fT — 140 — — 140 — MHz VCE = 10 V, IC = 10 mA Collector output capacitance — 3.5 — — 3.5 — pF VCB = 10 V, IE = 0, f = 1 MHz Collector cutoff current ICBO DC current transfer ratio Collector to emitter saturation voltage Note: hFE1* 1 Cob 1. The 2SD668 and 2SD668A are grouped by hFE1 as follows. B C D 2SD668 60 to 120 100 to 200 160 to 320 2SD668A 60 to 120 100 to 200 — 2 2SD668, 2SD668A Maximum Collector Dissipation Curve Collector power dissipation Pc (W) 1.5 1.0 0.5 0 50 100 Ambient temperature Ta (°C) 150 Typical Output Characteristics Collector current IC (mA) 20 100 16 90 80 70 60 12 50 40 8 30 20 4 10 µA IB = 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 0 Typical Transfer Characteristics VCE = 5 V Ta = 75°C 30 10 25 3 –25 Collector current IC (mA) 100 1 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 280 Ta = 75°C VCE = 5 V 240 25 200 –25 160 120 80 40 0.5 1.0 2 5 10 20 Collector current IC (mA) 50 3 Base to emitter saturation voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 1.2 0.24 lC = 10 lB 1.0 0.20 VBE (sat) 0.8 0.6 C Ta = –25° 25 75 0.12 75 VCE (sat) 0.4 0.16 0.08 25° T 0.2 – a= C 0.04 25 0 –0.1 0 Collector current IC (mA) Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) 500 VCE = 10 V 200 100 50 20 10 1 2 5 10 20 Collector current IC (mA) 50 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 4 2 5 10 20 50 100 Collector to base voltage VCB (V) Collector to emitter saturation voltage VCE (sat) (V) 2SD668, 2SD668A 2SD668, 2SD668A When using this document, keep the following in mind: 1. 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