PF08114B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-1029B (Z) Rev.2 Dec. 2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz) • For 3.5 V nominal operation Features • 2 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • Simple power control • 2stage amplifier : 10 dBm input Typ • Lead less thin & small package : 8 × 12.3 × 1.6 mm Typ • High efficiency : 54% Typ at 34.5 dBm for E-GSM : 52% Typ at 31.5 dBm for DCS1800 Pin Arrangement • RF-K1-10 98 10 G7 6 5 4 G3 2 1 1: Pin GSM 2: Vapc 3: Vdd2 4: Pout GSM 5: GND 6: Pout DCS 7: Vdd1 8: Vband 9: Pin DCS 10: GND G: GND PF08114B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Supply voltage Rating Unit 1 Vdd 7* V 2 Vapc voltage Vapc 4.3 * V Input power Pin 15 dBm Operating case temperature Tc (op) −25 to +100 °C Storage temperature Tstg −30 to +100 °C Notes: 1. This value is specified at no operation. (Vapc = 0 V) 2. This value is specified at no operation. (Vdd = 0 V) At Vdd > 0, Vapc controlled, Idd = 0 to x A, where x = current at Pout = 34.5 dBm (@GSM), 31.5 dBm (@DCS), 50 Ω Load, Vdd = 3.5 V and Tcase = 25°C Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids 10 µA Vdd = 4.5 V, Vapc = 0 V, Vband = 0 V 500 µA Vdd = 4.5 V, Vapc = 0 V, Vband = 2 V 3 mA Vdd = 3.5 V, Pin = 8 to 12 dBm, Pout = 34.5 dBm @GSM900 Pout = 31.5 dBm @DCS1800 Vapc controlled, Rg = Rl = 50 Ω Vapc control current Iapc ESD Product quality guide level for ESD is 500 V at following test circuit. 10 MΩ to 30 MΩ High-voltage power supply 1500 Ω Test pin (Bold line indicates the discharging transmission line) Sample 100 pF socket Common pin Rev.2, Dec. 2001, page 2 of 15 PF08114B Electrical Characteristics for E-GSM mode (Tc = 25°C) Test conditions unless otherwise noted: Vdd1 = Vdd2 = 3.5 V, Pin = 8 to 10 dBm, Vband = 0 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Frequency range f 880 915 MHz Band select (GSM active) Vband 0.0 0.2 V Input power Pin 8 10 12 dBm Supply voltage Vdd 2.9 3.5 4.5 V Total efficiency ηT 45 54 % 2nd harmonic distortion 2nd H.D. −50 −41.5 dBc 3rd harmonic distortion 3rd H.D. −50 −41.5 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 34.5 35.0 dBm Vapc = 2.2V Output power (2) Pout (2) 32.9 33.5 dBm Vdd = 2.9V, Vapc = 2.2V, Tc = +90°C Isolation −40 −25 dBm Vapc = 0.2 V, Pin = 12dBm Isolation at DCS RF-output when GSM is active −30 −20 dBm Pout GSM = 34.5dBm, Measured at f = 1760 to 1830MHz Switching time t r, t f 1 2 µs Pout GSM = −10 to 34.5dBm, t = 90% Stability No parasitic oscillation > −36 dBm All combinations of the following parameters: Vapc controlled *1, Pin = min to max, Vdd = 2.9 to 4.5V, Tcase = −20 to 90°C, Load VSWR = 7.5 : 1, All phase angles Load VSWR tolerance No degradation All combinations of the following parameters: Vapc controlled *1, Pin = min to max, Vdd = 2.9 to 4.5V, Tcase = −20 to 90°C, Load VSWR = 7.5 : 1, All phase angles Note: Test Condition Pout GSM = 34.5dBm, Vapc = controlled 1. Id = 0 A to x A, where x = current at Pout = 34.5 dBm, 50 Ω load, Vdd = 3.5 V and Tcase = 25°C. Vapc can range from 0.2 V to 4.3 V to control Idd. Rev.2, Dec. 2001, page 3 of 15 PF08114B Electrical Characteristics for DCS1800 mode (Tc = 25°C) Test conditions unless otherwise noted: Vdd1 = Vdd2 = 3.5 V, Pin = 8 to 10 dBm, Vband = 2 V, Rg = Rl = 50 Ω, Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition DCS1800 (1710 to 1785MHz) Frequency range f 1710 1785 MHz Band select (DCS active) Vctl 1.9 2.9 V Input power Pin 8 10 12 dBm Supply voltage Vdd 2.9 3.5 4.5 V Total efficiency ηT 45 52 % 2nd harmonic distortion 2nd H.D. −50 −38.5 dBc 3rd harmonic distortion 3rd H.D. −50 −38.5 dBc Input VSWR VSWR (in) 1.5 3 Output power (1) Pout (1) 31.5 32.5 dBm Vapc = 2.2V Output power (2) Pout (2) 30.0 31.0 dBm Vdd = 2.9V, Vapc = 2.2V, Tc = +90°C Pout DCS = 31.5dBm, Vapc = controlled Isolation −42 −36 dBm Vapc = 0.2 V Switching time t r, t f 1 2 µs Pout DCS = −10 to 31.5dBm, t = 90% Stability No parasitic oscillation > −36 dBm All combinations of the following parameters: Vapc controlled *1, Pin = min to max, Vdd = 2.9 to 4.5V, Tcase = −20 to 90°C, Load VSWR = 7.5 : 1, All phase angles Intermodulation dBc Pout = 31.5dBm, Pinterferer at output, Fo + 3MHz at −11.5dBm, Measure Fo − 3MHz, RBW = 300kHz Load VSWR tolerance No degradation All combinations of the following parameters: Vapc controlled *1, Pin = min to max, Vdd = 2.9 to 4.5V, Tcase = −20 to 90°C, Load VSWR = 7.5 : 1, All phase angles Note: −59 −52 1. Id = 0 A to x A, where x = current at Pout = 31.5 dBm, 50 Ω load, Vdd = 3.5 V and Tcase = 25°C. Vapc can range from 0.2 V to 4.3 V to control Idd. Rev.2, Dec. 2001, page 4 of 15 PF08114B Internal Diagram and External Circuit Z1 Pin 9 Pin DCS Pin 6 Pout DCS Pin 1 Pin GSM Pin 4 Pout GSM Bias circuit Z2 Pin 2 Vapc Z3 Pin 7 Vdd1 Pin 8 Vband Pin 3 Vdd2 C1 C3 C4 FB Pin DCS Pin GSM Vapc C5 FB Vband Z4 C2 C6 FB Vdd1 FB Vdd2 Pout GSM Pout DCS C1 = C2 = 10 µF TANTALUM ELECTROLYTE C3 = C4 = 1000 pF CERAMIC CHIP C5 = C6 = C7 = 10000 pF CERAMIC CHIP FB = FERRITE BEAD BLO1RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = Z3 = Z4 = 50 Ω MICROSTRIP LINE Rev.2, Dec. 2001, page 5 of 15 PF08114B Test Fixture Pattern Top View 42 1 4.8 1 6 0.6 1 6 1 1.6 2.5 4 3 6 1 4 12.7 1.575 15.525 1.35 1 40 3 3 1.5 9.55 7.55 3 3 2 1.6 0.2 1.5 0.525 1 1.35 0.6 1.4 2 1.350 1.575 6.775 2.5 0.6 1.4 0.525 3.85 0.6 1.6 0.6 6.775 0.925 1.35 1.575 15.525 1.350 1.575 Bottom View 42 0.5 0.5 0.5 4.8 2.5 0.5 3.6 1.575 15.9 16.875 11.4 1.350 1.575 15.525 8.125 2.5 1.4 6.775 0.5 0.5 1.2 0.525 1.4 1.7 1.35 0.5 40 0.5 1.4 0.5 1.0 2.1 0.5 1.4 3.95 1.4 0.5 1.4 2.0 1.4 1.35 1.7 1.4 1.4 1.4 0.5 1.7 0.6 0.525 6.775 15.525 1.575 1.350 16.875 Scale: 1/1 Grass Epoxy Double sided P.C.B (t = 1.6 mm, εr = 4.8) Rev.2, Dec. 2001, page 6 of 15 Unit: mm 1.575 PF08114B Characteristic Curves GSM mode (880 MHz) Pout, Eff vs. Vapc 40 60 Pout Efficiency Vdd = 3.5 V, Vband = 0 V, Pin = 10 dBm, Tc = 25°C, Rg = Rl = 50 Ω 50 0 40 −20 30 −40 20 −60 10 −80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vapc (V) 1.6 1.8 2.0 Efficiency (%) Pout (dBm) 20 0 2.2 GSM mode (915 MHz) Pout, Eff vs. Vapc 40 60 Pout Efficiency Vdd = 3.5 V, Vband = 0 V, Pin = 10 dBm, Tc = 25°C, Rg = Rl = 50 Ω 50 0 40 −20 30 −40 20 −60 10 −80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vapc (V) 1.6 1.8 2.0 Efficiency (%) Pout (dBm) 20 0 2.2 Rev.2, Dec. 2001, page 7 of 15 PF08114B DCS mode (1710 MHz) Pout, Eff vs. Vapc 40 60 Pout Efficiency Vdd = 3.5 V, Vband = 2 V, Pin = 10 dBm, Tc = 25°C, Rg = Rl = 50 Ω 50 0 40 −20 30 −40 20 −60 10 −80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vapc (V) 1.6 1.8 2.0 Efficiency (%) Pout (dBm) 20 0 2.2 DCS mode (1785 MHz) Pout, Eff vs. Vapc 40 60 Pout Efficiency Vdd = 3.5 V, Vband = 2 V, Pin = 10 dBm, Tc = 25°C, Rg = Rl = 50 Ω 50 0 40 −20 30 −40 20 −60 10 −80 0 0.2 Rev.2, Dec. 2001, page 8 of 15 0.4 0.6 0.8 1.0 1.2 1.4 Vapc (V) 1.6 1.8 2.0 0 2.2 Efficiency (%) Pout (dBm) 20 PF08114B GSM mode (880 MHz) Pout vs. Pin 37 Vapc = 2.2 V, Vband = 0 V, Rg = Rl = 50 Ω Pout (dBm) 36 35 34 2.9 V, 25°C 3.5 V, 25°C←Pout(1) 2.9 V, 90°C←Pout(2) 3.5 V, 90°C 33 32 0 2 4 6 8 Pin (dBm) 10 12 14 GSM mode (915 MHz) Pout vs. Pin 37 Vapc = 2.2 V, Vband = 0 V, Rg = Rl = 50 Ω Pout (dBm) 36 35 34 2.9 V, 25°C 3.5 V, 25°C←Pout(1) 2.9 V, 90°C←Pout(2) 3.5 V, 90°C 33 32 0 2 4 6 8 Pin (dBm) 10 12 14 Rev.2, Dec. 2001, page 9 of 15 PF08114B DCS mode (1710 MHz) Pout vs. Pin 34 Vapc = 2.2 V, Vband = 2 V, Rg = Rl = 50 Ω Pout (dBm) 33 32 31 2.9 V, 25°C 3.5 V, 25°C←Pout(1) 2.9 V, 90°C←Pout(2) 3.5 V, 90°C 30 29 0 2 4 6 8 Pin (dBm) 10 12 14 DCS mode (1785 MHz) Pout vs. Pin 34 Vapc = 2.2 V, Vband = 2 V, Rg = Rl = 50 Ω Pout (dBm) 33 32 31 2.9 V, 25°C 3.5 V, 25°C←Pout(1) 2.9 V, 90°C←Pout(2) 3.5 V, 90°C 30 29 0 Rev.2, Dec. 2001, page 10 of 15 2 4 6 8 Pin (dBm) 10 12 14 PF08114B GSM mode Pout(1) vs. Vdd 40 39 f = 880 MHz f = 915 MHz Vapc = 2.2 V, Vband = 0 V, Pin = 10 dBm, Tc = 25°C, Rg = Rl = 50 Ω Pout(1) (dBm) 38 37 36 35 34 3.0 3.5 4.0 4.5 5.0 5.5 5.0 5.5 Vdd (V) DCS mode Pout(1) vs. Vdd 37 36 f = 1710 MHz f = 1785 MHz Vapc = 2.2 V, Vband = 0 V, Pin = 10 dBm, Tc = 25°C, Rg = Rl = 50 Ω Pout(1) (dBm) 35 34 33 32 31 3.0 3.5 4.0 4.5 Vdd (V) Rev.2, Dec. 2001, page 11 of 15 PF08114B GSM mode Efficiency vs. Pout 70 60 f = 880 MHz f = 915 MHz Vdd = 3.5 V, Vband = 0 V, Pin = 10 dBm, Vapc = control, Tc = 25°C, Rg = Rl = 50 Ω Efficiency (%) 50 40 30 20 10 0 20 25 30 Pout (dBm) 35 40 DCS mode Efficiency vs. Pout 70 60 f = 1710 MHz f = 1785 MHz Vdd = 3.5 V, Vband = 0 V, Pin = 10 dBm, Vapc = control, Tc = 25°C, Rg = Rl = 50 Ω Efficiency (%) 50 40 30 20 10 0 20 Rev.2, Dec. 2001, page 12 of 15 25 30 Pout (dBm) 35 40 PF08114B GSM mode Pout(1) vs. Frequency 37 Vdd = 3.5 V, Vapc = 2.2 V, Vband = 0 V, Tc = 25°C, Rg = Rl = 50 Ω Pout (dBm) 36 35 34 GSM 33 800 850 900 Frequency (MHz) 950 1000 DCS mode Pout(1) vs. Frequency 35 Vdd = 3.5 V, Vapc = 2.2 V, Vband = 0 V, Tc = 25°C, Rg = Rl = 50 Ω Pout (dBm) 34 33 32 DCS 31 1650 1700 1750 Frequency (MHz) 1800 1850 Rev.2, Dec. 2001, page 13 of 15 PF08114B Package Dimensions Unit: mm + 0.1 8 G 7 1.6 − 0.2 6 10 8.0 ± 0.3 8.0 ± 0.3 7.8 9 5 1 2 G 3 (Upper side) 4 98 6 5 4 G3 2 1 12.3 ± 0.3 10 12.3 ± 0.3 1: Pin GSM 2: Vapc 3: Vdd2 4: Pout GSM 5: GND 6: Pout DCS 7: Vdd1 8: Vband 9: Pin DCS 10: GND G: GND (5.15) (5.15) (4.8) (4.8) (2.9) (2.9) (3.4) (1.4) (1.4) (2.5) (1.4)(1.4) (1.4) (2.4) (2.4) (2.4) (Bottom side) (3.0) (1.4) (1.0) (1.0) (2.6) (2.6) (1.4) (1.2) (0.7) (3.0) (1.4) (1.4) 8.0 ± 0.3 G7 Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Hitachi Code JEDEC JEITA Mass (reference value) Rev.2, Dec. 2001, page 14 of 15 RF-K1-10 PF08114B Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.2, Dec. 2001, page 15 of 15