PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS(ON)=15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives 3 2 S D 1 G MECHANICAL DATA • Case: TO-92 Molded Plastic INTERNAL SCHEMATIC DIAGRAM • Terminals : Solderable per MIL-STD-750,Method 2026 2 Drain 3 Source 1 ORDERINGINFORMATION Gate TYPE MARKING PACKAGE PACKING PJN1N60D 1N60D TO-92 2KPCS/AMMOPAK Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l P J N1 N6 0 D Uni ts D ra i n-S o urc e Vo lta g e V DS 600 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt ID 0 .5 A P uls e d D ra i n C urre nt 1 ) ID M 2 .0 A Ma xi mum P o we r D i s s i p a ti o n Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng fa c to r O T L =2 5 C Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e Avalanche Energy with Single Pulse IAS=1.6A, VDD=50V, L=77mH Junction-to-Lead Thermal Resistance 0 .9 T A =2 5 O C 2) Junction-to Ambient Thermal Resistance PD 3 .1 0 .0 2 W T J ,T S TG -5 5 to +1 5 0 E AS 106 R θJ L 40 O C /W R θJ A 140 O C /W O C mJ Note : 1. Maximum DC current limited by the package 2. Reference point of the R θJL is the drain lead PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.25.2009 PAGE . 1 PJN1N60D ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS =0 V, I D =2 5 0 uA 600 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 0.5A - 10.5 15 Ω I DSS VDS=600V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 5 .6 9 .2 - 1 .3 2 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 2.8 - Turn-On D e la y Ti me t d (o n) - 8.8 16 Turn-On Ri s e Ti me tr - 6.2 8.6 - 1 5 .2 26 - 11 .2 21 - 150 180 - 14 22 - 1.4 4.0 Turn-Off D e la y Ti me Turn-Off F a ll Ti me V D S =4 8 0 V, ID = 0 .5 A V GS =1 0 V VDD=300V, I D =0.5A V GS =1 0 V, RG=5Ω t d (o ff) tf Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 0 .5 A Ma x.P uls e d S o urc e C urre nt I SM - - - 2 .0 A D i o d e F o rwa rd Vo lta g e V SD IS =0 .5 A , V GS =0 V - - 1 .6 V Re ve rs e Re c o ve ry Ti me t rr - 190 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF =0 .5 A d i /d t=1 0 0 A /us - 0 .5 - uC rr NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. STAD-DEC.25.2009 PAGE . 2 PJN1N60D 1.8 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 1.6 1.4 VGS= 20V~ 7.0V 1.2 1 0.8 5.0V 0.6 0.4 0.2 0 10 VDS =50V 1 0.1 -55oC 0.01 0 5 10 15 20 25 30 2 3 VDS - Drain-to-Source Voltage (V) 5 6 7 8 Fig.2 Transfer Characteristric 25 RDS(ON) - On Resistance(Ω Ω) 30 20 15 VGS=10V 10 VGS = 20V 5 0 0 0.5 1 1.5 ID - Drain Current (A) Fig.3 On Resistance vs Drain Current 2.5 2.3 2.1 1.9 ID =0.5A 25 20 15 10 TJ =25oC 5 0 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.4 On Resistance vs Gate to Source Voltage 300 VGS =10 V ID =0.5A f = 1MHz VGS = 0V 250 C - Capacitance (pF) RDS(ON) - On Resistance(Ω Ω) 4 VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric RDS(ON) - On-Resistance(Normalized) 25oC TJ = 125oC 200 1.7 1.5 Ciss 150 1.3 100 1.1 0.9 0.7 Cos 50 Crss 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature STAD-DEC.25.2009 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJN1N60D 10 12 ID =0.5A 10 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VDS=480V VDS=300V 8 VDS=120V 6 1 TJ = 125oC 25oC 0.1 4 2 -55oC 0.01 0 0 1 2 3 4 5 Qg - Gate Charge (nC) 6 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(Normalized) VGS = 0V 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-DEC.25.2009 PAGE. 4 PJN1N60D LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.25.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm, Br+Cl<1000ppm,Sb2O3<100ppm. 2. If your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.