MOSFET SMD Type MOS Field Effect Transistor 2SK3322 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS(on) = 2.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low on-state resistance MAX. (VGS = 10 V, ID = 2.8A) Avalanche capability ratings +0.2 2.54-0.2 +0.2 15.25-0.2 30 V +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 Gate voltage rating +0.2 8.7-0.2 QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V ID 5.5 A 20 A Drain current Idp * Power dissipation TA=25 PD 1.5 W 65 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=600V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=2.8A 1.0 RDS(on) VGS=10V,ID=2.8A Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Typ Max Unit 100 A 10 A 3.5 V S 1.7 2.2 550 pF 115 pF Crss 13 pF Turn-on delay time ton 12 ns Rise time tr 10 ns Turn-off delay time toff 35 ns Fall time tf 12 ns VDS=10V,VGS=0,f=1MHZ ID=2.8A,VGS(on)=10V,RG=10 ,VDD=150V www.kexin.com.cn 1