Phototransistors PNZ109CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05 Fast response : tr = 5 µs (typ.) 2.54±0.25 Small size (low in height) package 5 .1 1. 0± 0. 15 0 0± 1. Signal mixing capability using base pin 45± ø5.75 max. ø4.2±0.2 3˚ Resin to cutoff visible light is used 3 1 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min 2.5 Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 500 lx*1 typ max 0.05 2 4 Unit µA mA Peak sensitivity wave length λP VCE = 10V 900 nm Acceptance half angle θ Measured from the optical axis to the half power point 80 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 5 µs Fall time tf*2 RL = 100Ω 6 µs Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,,,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistors PNZ109CL ICE(L) — VCE 80 60 40 20 Ta = 25˚C T = 2856K ICE(L) — L 16 VCE = 10V Ta = 25˚C T = 2856K 10 3 500 lx 300 lx 200 lx 12 Collector photo current ICE(L) (mA) 100 Collector photo current PC (mW) Collector power dissipation 20 ICE(L) (mA) PC — Ta 120 100 lx 8 50 lx 4 10 2 10 1 10 –1 L = 10 lx 0 20 40 60 Ambient temperature 80 0 100 Ta (˚C ) 0 4 8 12 ICEO — Ta 10 –2 40 60 Ambient temperature 80 1 Ta (˚C ) 80 60 40 0 600 120 700 800 900 1000 1100 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) VCC = 10V Ta = 25˚C 10 4 50˚ 10 3 60˚ 70˚ 80˚ 90˚ tr (µs) 20 80 VCC = 10V Ta = 25˚C 10 4 Rise time 40 Relative sensitivity S (%) 60 VCE = 10V Ta = 25˚C tr — ICE(L) 30˚ 40˚ 100 80 20˚ 40 10 3 tf (µs) 10˚ 0 Ambient temperature Directivity characteristics 0˚ 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 1 1 10 –1 10 –2 10 –1 1 Collector photo current 2 10 4 20 10 –1 – 40 100 10 3 L (lx) Spectral sensitivity characteristics 100 Relative sensitivity 10 –1 10 2 10 Illuminance S (%) ICE(L) (mA) 1 Collector photo current Dark current ICEO (µA) 10 1 VCE (V) VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 –2 24 ICE(L) — Ta 10 0 20 Collector to emitter voltage 10 2 10 –3 – 20 16 Fall time 0 – 20 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)