DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4178 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A) • Low gate to drain charge QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A) • 4.5 V drive available ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4178(1)-S27-AY Note 2SK4178-ZK-E1-AY Note 2SK4178-ZK-E2-AY Note Pure Sn (Tin) PACKING PACKAGE Tube 75 p/tube TO-251 (MP-3-b) typ. 0.34 g Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g Note Pb-free (This product does not contain Pb in external electrode). (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A ID(pulse) Note1 ±144 A Total Power Dissipation (TC = 25°C) PT1 33 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C Drain Current (pulse) Storage Temperature Single Avalanche Current Note2 IAS 23 A Single Avalanche Energy Note2 EAS 52.9 mJ (TO-252) Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19080EJ1V0DS00 (1st edition) Date Published December 2007 NS Printed in Japan 2007 2SK4178 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 μA 2.5 V | yfs | VDS = 10 V, ID = 12 A RDS(on)1 VGS = 10 V, ID = 30 A 6.8 9.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 12 A 9.8 15 mΩ Input Capacitance Ciss VDS = 10 V, 1500 pF Output Capacitance Coss VGS = 0 V, 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 126 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 30 A, 9 ns Rise Time tr VGS = 10 V, 9.7 ns Turn-off Delay Time td(off) RG = 3 Ω 32 ns Fall Time tf 7.7 ns Total Gate Charge QG1 VDD = 15 V, VGS = 10 V, ID = 30 A 24 nC QG2 VDD = 15 V, VGS = 4.5 V, ID = 30 A 11.5 nC Gate to Source Charge QGS VDD = 15 V, ID = 30 A 3.7 nC Gate to Drain Charge QGD 3.7 nC RG 1.2 Ω Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate Resistance Body Diode Forward Voltage Note 1.5 2.0 7 15 S VF(S-D) IF = 30 A, VGS = 0 V 0.87 1.5 V Reverse Recovery Time trr IF = 30 A, VGS = 0 V, 29 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 23 nC Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L VGS RL PG. 50 Ω VGS VDD VGS = 20 → 0 V RG PG. Wave Form 0 VGS 10% 90% VDD VDS IAS 90% BVDSS VDS ID VDS τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = 2 mA RL 50 Ω VDD 90% VDS VGS 0 Data Sheet D19080EJ1V0DS 0 10% 10% tr td(off) Wave Form td(on) ton tf toff 2SK4178 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 35 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 30 25 20 15 10 5 0 0 0 25 50 75 100 125 0 150 25 TC - Case Temperature - °C 75 100 125 150 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. CASE TEMPERATURE 1000 80 70 ID(pulse) ID(DC) 10 R (o DS n) (V G d it e Lim V ) i0 1 = S Po w er D is si p at io 1 n = 1i 0 0 μs Li m it e d 60 ID - Drain Current - A 100 PW 1i m s i 50 40 30 20 1i0 m s i 10 TC = 25°C Single pulse 0.1 0.1 0 1 10 0 100 25 VDS - Drain to Source Voltage - V 50 75 100 125 150 TC - Case Temperature - °C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 50 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 3.8°C/W 1 Single pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width – s Data Sheet D19080EJ1V0DS 3 2SK4178 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 VGS = 10 V 150 10 ID - Drain Current - A ID - Drain Current - A 200 100 4.5 V 50 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 1 0.1 0.01 VDS = 10 V Pulsed Pulsed 0 0.001 0 0.5 1 1.5 2 2.5 0 3 1 VDS - Drain to Source Voltage - V 2.5 2 1.5 1 VDS = VGS ID = 250 μA 0 -25 25 75 125 100 VDS = 10 V Pulsed 25°C 75°C 125°C 150°C 0.1 0.1 1 10 V Pulsed 0 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS = 4.5 V 100 ID - Drain Current - A 4 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 15 10 10 ID - Drain Current - A 20 1 Tch = −55°C −25°C 1 175 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 5 5 10 Tch - Channel Temperature - °C 10 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(th) – Gate to Source Threshold Voltage - V 3 -75 3 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 0.5 2 15 Pulsed ID = 30 A 9.6 A 10 5 0 0 5 10 15 VGS – Gate to Source Voltage - V Data Sheet D19080EJ1V0DS 20 2SK4178 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 20 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 4.5 V, ID = 12 A 15 10 10 V, 30 A 5 Pulsed Ciss 1000 0 Coss 100 Crss VGS = 0 V f = 1 MHz 10 -75 -25 25 75 125 175 0.1 Tch - Channel Temperature - °C 100 30 VDS – Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 td(off) tf td(on) 10 tr VDD = 15 V VGS = 10 V RG = 3 Ω 0.1 10 VDD = 24 V 15 V 25 8 20 6 15 4 VGS 10 2 5 VDS ID = 30 A 0 1 10 100 0 0 ID - Drain Current - A 10 20 30 QG – Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 10 V 10 VGS = 4.5 V 0V 1 0.1 Pulsed trr – Reverse Recovery Time - ns 1000 IF – Diode Forward Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS SWITCHING CHARACTERISTICS 1 1 VDS - Drain to Source Voltage – V 0.01 100 10 VGS = 0 V di/dt = 100 A/μs 1 0 0.5 1 1.5 VF(S-D) – Source to Drain Voltage - V Data Sheet D19080EJ1V0DS 0.1 1 10 100 IF – Diode Forward Current - A 5 VGS – Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK4178 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 23 A EAS = 52.9 mJ 10 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 0.01 0.1 100 80 60 40 20 0 1 10 L - Inductive Load - mH 6 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 23 A 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D19080EJ1V0DS 2SK4178 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3ZK) 6.6±0.2 5.3 TYP. 2.3±0.1 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 4 2.3±0.1 1.0 TYP. 1.06 TYP. 1) TO-251 (MP-3-b) 0.5±0.1 No Plating 0.76±0.12 1.14 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 TYP. 1.04 TYP. 2.3 TYP. 2 0.51 MIN. 4.0 MIN. 0.5±0.1 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 1.14 MAX. 0.8 3 4.13 TYP. 2 1.1±0.13 1 11.25 TYP. 6.1±0.2 4 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D19080EJ1V0DS 7 2SK4178 • The information in this document is current as of December, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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