DATA SHEET PHOTOCOUPLER PS2506-1,-2,-4, PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2506-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2506L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. FEATURES • AC input response • High isolation voltage (BV = 5 000 Vr.m.s.) • High current transfer ratio (CTR = 2 000 % TYP.) • High-speed switching (tr, tf = 100 µs TYP.) • Taping product number (PS2506L-1-E3, E4, F3, F4) (PS2506L-2-E3, E4) • UL approved (File No. E72422 (S) ) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P11305EJ4V0DS00 (4th edition) Date Published September 1997 NS Printed in Japan The mark shows major revised points. © 1988 PS2506-1,-2,-4,PS2506L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2506-1 (New Package) PS2506-2 8 7 6 5 4 3 4.6 ± 0.35 10.2 MAX. 1 2 1 2 3 4 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 1.25±0.15 0.50 ± 0.10 0.25 M 4.55 MAX. 3.8 MAX. 2.8 MIN. 0.65 0.65 2.8 MIN. 4.55 MAX. 3.8 MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 0 to 15˚ 2.54 PS2506-1 PS2506-4 16 15 1413 12 1110 9 4 3 1 2 3 4 5 6 7 8 5.1 MAX. 20.3 MAX. 1 2 6.5 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 7.62 1.25±0.15 0.50 ± 0.10 0.25 M 2.54 Caution New package 1-ch only 0 to 15˚ 0.65 4.55 MAX. 3.8 MAX. 3.8 MAX. 0.65 2.8 MIN. 4.55 MAX. 2.8 MIN. 7.62 2 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9,11,13,15. Emitter 10,12,14,16. Collector 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 0 to 15˚ PS2506-1,-2,-4,PS2506L-1,-2,-4 Lead Bending Type PS2506L-1 (New Package) PS2506L-2 8 7 6 5 4 3 4.6 ± 0.35 10.2 MAX. 1 2 1 2 3 4 0.90 ± 0.25 1.25±0.15 0.25 M 0.05 to 0.2 7.62 3.8 MAX. 3.8 MAX. 7.62 1, 3. Anode, Cathode 2, 4. Cathode, Anode 5, 7. Emitter 6, 8. Collector 6.5 0.05 to 0.2 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 0.9 ± 0.25 1.25±0.15 9.60 ± 0.4 9.60 ± 0.4 0.25 M 2.54 2.54 PS2506L-1 PS2506L-4 16 15 1413 12 1110 9 4 3 1 2 3 4 5 6 7 8 20.3 MAX. 0.9 ± 0.25 9.60 ± 0.4 1.25±0.15 0.25 M 2.54 7.62 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 6.5 1 2 1, 3, 5, 7. Anode, Cathode 2, 4, 6, 8. Cathode, Anode 9,11,13,15. Emitter 10,12,14,16. Collector 0.05 to 0.2 5.1 MAX. 0.9 ± 0.25 1.25±0.15 9.60 ± 0.4 0.25 M 2.54 Caution New package 1-ch only 3 PS2506-1,-2,-4,PS2506L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2506-1, PS2506L-1 Diode Forward Current (DC) IF Power Dissipation Derating Transistor PS2506-2,-4 PS2506L-2,-4 ±80 mA ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch Power Dissipation Peak Forward Current Unit *1 IFP ±1 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 6 V Collector Current Power Dissipation Derating IC 200 160 mA/ch ∆PC/°C 2.0 1.6 mW/°C PC 200 160 mW/ch Power Dissipation *2 Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions MIN. TYP. MAX. Unit 1.4 V Forward Voltage VF IF = ±10 mA 1.17 Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 100 pF Transistor Collector to Emitter Dark Current ICEO VCE = 40 V, IF = 0 mA Coupled Current Transfer Ratio CTR IF = ±1 mA, VCE = 2 V 200 2 000 CTR Ratio CTR1/ CTR2 IF = 1 mA, VCE = 2 V 0.3 1.0 Collector Saturation Voltage VCE (sat) IF = ±1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kV Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF VCC = 10 V, IC = 2 mA, RL = 100 Ω 100 µs *1 Rise Time Fall Time *2 tr *2 IF2 V Ω 11 10 100 VCE Pulse Input IF VCC PW = 1 ms Duty Cycle = 1/10 50 Ω 4 3.0 *2 Test circuit for switching time IC1 IC2 nA % 1.0 tf *1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 IF1 400 VOUT RL = 100 Ω PS2506-1,-2,-4,PS2506L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2506-1 PS2506L-1 100 PS2506-2 PS2506L-2 PS2506-4 PS2506L-4 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 125 PS2506-2 PS2506L-2 100 PS2506-4 PS2506L-4 2 mW/˚C 1.6 mW/˚C 50 25 50 75 100 125 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 150 80 60 TA = +100 ˚C +60 ˚C +25 ˚C Forward Current IF (mA) 50 Forward Current IF (mA) PS2506-1 PS2506L-1 150 0 150 100 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 0.7 40 20 0 –20 –40 –60 0.1 0.8 0.9 1.0 1.1 1.2 1.4 1.3 –80 1.5 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 Forward Voltage VF (V) Forward Voltage VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 200 VCE = 2 V 5V 10 V 24 V 40 V 1000 100 10 1 –50 10 mA 100 10 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 200 –25 0 25 50 75 Ambient Temperature TA (˚C) 100 5 mA 50 1 mA 10 0.5 mA 5 0.2 mA 1 0.5 0.2 0.4 IF = 0.1 mA 0.6 0.8 1.0 1.2 1.4 1.6 Collector Saturation Voltage VCE(sat) (V) 5 PS2506-1,-2,-4,PS2506L-1,-2,-4 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Normalized Current Transfer Ratio CTR 160 10mA Collector Current IC (mA) 140 120 100 80 5 mA 60 40 1 mA 20 IF = 0.5 mA 0 2 4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 6 8 1.4 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 1.2 1.0 0.8 0.6 0.4 0.2 –50 10 –25 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 75 100 7 000 6 000 5 000 4 000 3 000 2 000 1 000 Current Transfer Ratio CTR (%) 3 000 VCE = 2 V 0 0.1 0.5 1 5 10 VCE = 2 V 2 500 2 000 1 500 1 000 500 0 30 10 50 SWITCHING TIME vs. LOAD RESISTANCE 10 000 VCC = 5 V, 500 IC = 2 mA, CTR = 2 280 % tf Switching Time t ( µ s) 5 000 100 tr td 10 5 2 30 50 500 SWITCHING TIME vs. LOAD RESISTANCE 1 000 50 100 Forward Current IF ( µ A) Forward Current IF (mA) Switching Time t ( µ s) 50 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 8 000 ts tf VCC = 5 V, IF = 1 mA, CTR = 2 280 % 1 000 500 ts 100 50 tr 10 td 100 500 1k Load Resistance RL (Ω) 6 25 Ambient Temperature TA (˚C) Collector to Emitter Voltage VCE (V) Current Transfer Ratio CTR (%) 0 5k 300 500 1k 5k 10 k Load Resistance RL (Ω) 50 k 100 k PS2506-1,-2,-4,PS2506L-1,-2,-4 FREQUENCY RESPONSE LONG TIME CTR DEGRADATION 1.2 IF = 1 mA, VCE = 2 V 1.0 –5 –10 –15 RL = 100 Ω TA = 25 oC 0.8 TA = 60 oC 0.6 0.4 0.2 –20 0.2 IF = 1 mA (TYP.) CTR (Relative Value) Normalized Gain GV 0 0.5 1 2 5 10 20 Frequency f (kHz) 50 100 200 0 10 102 103 104 105 106 Time (Hr) 7 PS2506-1,-2,-4,PS2506L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Taping Direction PS2506L-1-E3 PS2506L-1-F3 PS2506L-1-E4 PS2506L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2506L-1-E3, E4: φ 250 PS2506L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2506L-1-E3, E4 1 000 pcs/reel PS2506L-1-F3, F4 2 000 pcs/reel 8 PS2506-1,-2,-4,PS2506L-1,-2,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Taping Direction PS2506L-2-E3 PS2506L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2506-1,-2,-4,PS2506L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 10 PS2506-1,-2,-4,PS2506L-1,-2,-4 [MEMO] 11 PS2506-1,-2,-4,PS2506L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5