DATA SHEET PHOTOCOUPLER PS2761-1 HIGH ISOLATION VOLTAGE 4-PIN SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2761-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic SOP (Small Outline Package) for high density applications. The package has shield effect to cut off ambient light. FEATURES • Isolation distance (0.4 mm MIN.) • High isolation voltage (BV = 3 750 Vr.m.s.) • SOP (Small Outline Package) type • High-speed switching (tr = 4 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product: PS2761-1-F3, F4 • UL approved: File No. E72422 (S) • BSI approved: No. 8436/8437 APPLICATIONS • Hybrid IC • Programmable logic controllers • Power supply The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14143EJ2V0DS00 (2nd edition) Date Published July 2000 NS CP (K) Printed in Japan The mark • shows major revised points. © 1998, 2000 PS2761-1 PACKAGE DIMENSIONS in millimeters 4±0.5 TOP VIEW 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.1±0.1 2.1±0.2 0.15 +0.10 –0.05 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 0.5±0.3 0.25 M PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 5 mm Creepage Distance 5 mm Isolation Distance 2 0.4 mm Data Sheet P14143EJ2V0DS00 PS2761-1 ORDERING INFORMATION Part Number PS2761-1 Package 4-pin SOP *1 Application Part Number Packing Style Magazine case 100 pcs PS2761-1-F3 PS2761-1 Embossed Tape 3 500 pcs/reel PS2761-1-F4 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ∆PD/°C 0.8 mW/°C PD 80 mW IFP 1.0 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 5 V IC 40 mA ∆PC/°C 1.5 mW/°C PC 150 mW Isolation Voltage BV 3 750 Vr.m.s. Operating Ambient Temperature TA –40 to +100 °C Storage Temperature Tstg –55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation *2 *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P14143EJ2V0DS00 3 PS2761-1 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Transistor Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 40 V Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 5 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz *2 Rise Time tr *2 tf Fall Time MAX. Unit 1.1 1.4 V 5 µA 15 50 100 VCC = 5 V, IC = 2 mA, RL = 100 Ω L: 100 to 300 (%) N: 50 to 400 (%) *2 Test circuit for switching time Pulse Input VCC PW = 100 µ s Duty cycle = 1/10 IF In monitor VOUT RL = 100 Ω Data Sheet P14143EJ2V0DS00 100 nA 400 % 0.3 V 0.4 pF 4 µs 5 M: 50 to 150 (%) pF Ω 11 K: 200 to 400 (%) 4 TYP. 10 *1 CTR rank 50 Ω MIN. PS2761-1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 80 60 40 20 50 25 0 100 75 210 180 150 120 90 60 30 100 75 Ambient Temperature TA ( ˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 Collector Current IC (mA) 30 Forward Current IF (mA) 50 Ambient Temperature TA (˚C) 100 10 25 0 TA = +100 ˚C +60 ˚C +25 ˚C 1 0 ˚C –25 ˚C –50 ˚C 0.1 IF = 25 mA 20 mA 15 mA 25 10 mA 20 15 5 mA 10 5 Collector to Emitter Dark Current ICEO (nA) 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 000 Collector Current IC (mA) 100 1 000 VCE = 20 V 40 V 100 10 1 –25 0 25 50 75 100 10 mA 5 mA 2 mA 10 1 0.1 0.0 Ambient Temperature TA (˚C) IF = 1mA 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) Data Sheet P14143EJ2V0DS00 5 PS2761-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.4 400 1.2 350 VCE = 5 V, n=3 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0.0 –50 0 –25 25 50 300 250 200 150 100 50 0 0.1 100 75 1 100 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 1 000 IF = 1 mA, VCC = 5 V, CTR = 200 % 10 Switching Time t (µs) IC = 2 mA, VCC = 5 V, CTR = 200 % Switching Time t (µ s) Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE tf tr td 1 10 ts 100 100 ts 10 tr td 1 0.1 10 10 k 1k tf 100 1k 10 k 100 k Load Resistance RL (Ω) Load Resistance RL (Ω) LONG TERM CTR DEGRADATION FREQUENCY RESPONSE 1.2 IF = 5 mA 1.0 –5 CTR (Relative Value) Normalized Gain Gv 0 100 Ω RL = 1 kΩ –10 300 Ω –15 0.4 1 10 100 1 000 0.0 1 102 103 104 Time (Hr) Frequency f (kHz) Remark The graphs indicate nominal characteristics. 6 IF = 1 mA, TA = 25 ˚C IF = 5 mA, TA = 25 ˚C IF = 20 mA, TA = 25 ˚C IF = 20 mA, TA = 60 ˚C 0.6 0.2 –20 –25 0.1 0.8 Data Sheet P14143EJ2V0DS00 105 106 PS2761-1 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.4±0.1 7.4±0.1 5.5±0.1 1.55±0.1 12.0±0.2 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 4.6±0.1 8.0±0.1 Tape Direction PS2761-1-F4 PS2761-1-F3 Outline and Dimensions (Reel) φ 330 2.0±0.5 1.5±0.5 60 ˚ φ 13.0±0.5 120 ˚ φ 80±5.0 φ 21.0±0.8 1.5 6.0±1 12.4+2.0 –0.0 Packing: 3 500 pcs/reel Data Sheet P14143EJ2V0DS00 7 PS2761-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 235 °C or below (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 100 to 160 ˚C 60 to 120 s (preheating) Time (s) (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet P14143EJ2V0DS00 PS2761-1 [MEMO] Data Sheet P14143EJ2V0DS00 9 PS2761-1 [MEMO] 10 Data Sheet P14143EJ2V0DS00 PS2761-1 [MEMO] Data Sheet P14143EJ2V0DS00 11 PS2761-1 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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