Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) BAT 114-099R 14s Q62702-A1006 1) Pin Configuration Package1) SOT-143 Dimensions see chapter Package Outlines Maximum Ratings (per diode) Parameter Symbol Forward current IF Top Tstg Ptot Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Semiconductor Group 1 Limit Values Unit 90 mA − 55 to + 150 °C − 55 to + 150 °C 100 mW 02.96 BAT 114-099R Thermal Resistance (per diode) Parameter Symbol Junction to soldering point RthJS RthJA Junction to ambient1) 1) Limit Values Unit ≤ 780 K/W ≤ 1020 K/W Mounted on alumina 15 mm × 16.7 mm to 0.7 mm Electrical Characteristics (per diode; TA = 25 °C) Parameter Symbol Limit Values min. typ. Forward voltage IF = 1 mA IF = 10 mA VF Forward voltage matching1) IF = 10 mA ∆ VF Diode capacitance VR = 0 V, f = 1 MHz CT Forward resistance IF = 10 mA / 50 mA RF 1) ∆VF is difference between lowest and highest VF in component. Semiconductor Group 2 Unit max. V − − 0.58 0.68 0.7 0.78 mV − − 20 − 0.25 − − 5.5 − pF Ω BAT 114-099R Forward Current IF = f(VF) Semiconductor Group 3