PHOTOMULTlPLlER TUBES R7446 R7446P (For Photon Counting) High Cathode Sensitivity with Low Noise Photocathode FEATURES Spectral Response ..................................... 160 to 680 nm Cathode Sensitivity Luminous ........................................................ 60 µA/lm Radiant at 400nm ............................................ 60 mA/W Anode Sensitivity (at 1000V) Luminous ......................................................... 400 A/lm Radiant at 400nm ..................................... 4.0 × 105 A/W Low Dark Current .................................................... 0.1 nA Low Dark Counts (R7446P) .................................... 10 cps APPLICATIONS Environmental Monitoring Atomic Emission Spectrometer Atomic Absorption Spectrometer Figure 1: Typical Spectral Response GENERAL Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight Description/Vaiue Unit 160 to 680 nm 400 nm Low noise bialkali 8 × 24 mm Fused Silica Low noise bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 pF pF 45 g SuitabIe Socket E678–11A (option) SuitabIe Socket Assembly E717–63 (option) 100 CATODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) Parameter TPMSB0193EA 10 CATHODE RADIANT SENCITIVITY 1 QUANTUM EFFICIENCY 0.1 0.01 100 200 300 400 500 600 700 800 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1999 Hamamatsu Photonics K.K PHOTOMULTlPLlER TUBES R7446, R7446P (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit Between Anode and Cathode 1250 Vdc Between Anode and Last Dynode 250 Vdc 0.1 mA -80 to +50 °C Supply Voltage Average Anode Current Ambient Temperature CHARACTERISTlCS (at 25 °C) Parameter R7446 for General Purpose R7446P for Photon Counting Min. Min. Cathode Sensitivity Quantum Efficiency at 300nm (Peak) LuminousB Radiant at 400nm (Peak) BlueC 40 Anode Sensitivity LuminousD Radiant at 400nm 200 Typ. Max. 20 60 60 6.4 Typ. 200 6.7 × 106 GainE Unit 20 60 60 6.4 % µA/lm mA/W µA/lm-b 400 4.0 × 105 A/lm A/W 40 400 4.0 × 105 Max. 6.7 × 106 Current E Anode Dark After 30minute Storage in the darkness Anode Dark CountsF 0.1 2.0 0.1 10 0.5 50 nA cps ENI(Equivalent Noise Input)G 3.7 × 10-17 3.7 × 10-17 W Time ResponseD Anode Pulse Rise TimeH Electron Transit TimeJ Transit Time Spread (TTS)K 2.2 22 1.2 2.2 22 1.2 ns ns ns Anode Current StabilityL Current Hysteresis Voltage Hysteresis 0.1 1.0 0.1 1.0 % % A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 × 106. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. f S q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. K: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. L: Hysteresis is temporary instability in anode current after light and voltage are applied. lmax. Hysteresis = lmin. × 100(%) li ANODE CURRENT NOTES l max. li l min. TIME 5 0 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio Electrode Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode, 1 1 1 P : Anode 1 1 1 P 1 Figure 2: Typical Gain and Anode Dark Current TPMSB0026EA 10–5 108 10–6 107 10–7 106 Figure 3: Typical Time Response TPMSB0004EB 100 60 40 TRAN SIT T N AI 10–9 104 T EN TIME (ns) 105 10 8 6 R 10–10 K DE 10–11 R CU 103 4 102 2 101 1500 1 O 400 500 600 RISE R DA AN 10–12 300 800 1000 500 300 TIME 700 1000 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 4: Typical ENI vs. Wavelength Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage TPMSB0194EA TPMSB0028EA 10-12 10–10 10-13 10–11 10-14 EADCI (lm) EQUIVALENT NOISE INPUT (W) IME 20 G 10–8 GAIN ANODE DARK CURRENT (A) 80 10-15 10–12 10–13 10-16 10-17 100 200 300 400 500 600 700 10–14 300 800 400 500 600 800 1000 1200 SUPPLY VOLTAGE (V) WAVELENGTH (nm) Data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range. Figure 6: Typical Single Photon Height Distribution for R7446P TPMSB0195EA 104 WAVELENGTH OF INCIDENT LIGHT : 450 (nm) : 870 (V) SUPPLY VOLTAGE : 70 (ch) LOWER LEVEL DISCRI. : 5612 (cps) PHOTON + DARK COUNT : 10 (cps) DARK COUNT : 25 (°C) TEMPERATURE 0.8 0.6 0.4 SIGNAL + DARK TPMSB0030EA 103 DARK COUNT (cps) FULL SCALE 104 (PHOTON+DARK) FULL SCALE 103 (DARK) COUNT PER CHANNEL 1.0 Figure 7: Typical Temperature Characteristics of Dark Count for R7446P 102 101 100 0.2 DARK 0 200 400 600 800 1000 10–1 –20 0 +20 TEMPERATURE (°C) CHANNEL NUMBER (CH) +40 +60 PHOTOMULTlPLlER TUBES R7446, R7446P (For Photon Counting) Figure 8: Dimensional Outline and Basing Diagram(Unit: mm) 28.5 Figure 10: Socket E678-11A (Option) 1.5 8MIN. 49 38 PHOTOCATHODE DY6 6 DY7 7 24MIN. DY4 4 33 5 8 DY8 3.5 DY5 2 10 P 1 29 11 K DY1 4 DY2 9 DY9 DIRECTION OF LIGHT 18 94MAX. 80MAX. 49.0 2.5 5 DY3 3 BOTTOM VIEW (BASING DIAGRAM) 32.2 0.5 TACCA0064EA 11 PIN BASE JEDEC No. B11-88 TPMSA0001EA Figure 9: D Type Socket Assembly E717-63 (Option) PMT 3.5 33.0 ± 0.3 5 SOCKET PIN No. SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 10 P 38.0 ± 0.3 DY9 9 DY8 8 49.0 ± 0.3 DY7 7 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 R10 C3 R9 C2 R8 C1 R7 4 29 R6 R to R10 : 330 kΩ C1 to C3 : 0.01 µF 30 +0 -1 R5 31.0 ± 0.5 R4 450 ± 10 HOUSING (INSULATOR) POTTING COMPOUND R3 R2 R1 11 -HV AWG22 (VIOLET) TACCA0002EG * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 TPMS1068E01 OCT. 1999