PHOTOMULTIPLIER TUBES R2693, R2693P Transmission Mode Low Noise Bialkali Photocathode 28 mm (1-1/8 inch) Diameter, Side-on Type FEATURES ●Low Dark Current ●Low Dark Counts (R2693P) ●Wide Photocathode ●Excellent Spatial Uniformity ●Fast Time Response APPLICATIONS ●Fluorescence Detector ●Chemiluminescence Detector ●Light Scattering Detector SPECIFICATIONS Figure 1: Electron Trajectories GENERAL Parameter Description/Value 185 to 650 Spectral Response 375 Wavelength of Maximum Response MateriaI Low noise bialkali Photocathode Minimum Effective Area 16 (H) × 18 (W) UV glass Window Material Structure Circular-cage Dynode Number of Stages 9 1.2 Direct Interelectrode Anode to Last Dynode Anode to All Other Electrodes 3.4 Capacitances Base 11-pin base JEDEC No. B11-88 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678–11A (Sold Separately) E717–63 (Sold Separately) SuitabIe Socket Assembly E717–74 (Sold Separately) Unit nm nm — mm — — — pF pF — °C °C — — — 3rd DYNODE 1st DYNODE FOCUSING ELECTRODES 2nd DYNODE GLASS BULB PHOTOELECTRONS PHOTOCATHODE LIGHT TPMSC0003EC Figure 2: Typical Spatial Uniformity X ●Y-Axis 100 100 90 90 80 80 RELATIVE OUTPUT (%) Y RELATIVE OUTPUT (%) ●X-Axis 70 60 50 40 30 20 SPOTSIZE: 1 mm SUPPLY VOLTAGE: 1000 V WAVELENGTH: 400 nm 60 50 40 30 20 10 0 -15 70 10 -10 CATHODE ANODE 5 0 POSITION (mm) 5 10 15 0 -15 -10 CATHODE ANODE 5 0 5 10 15 POSITION (mm) TPMSB0066EB Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R2693, R2693P MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Unit V V mA Value 1250 250 0.1 CHARACTERISTlCS (at 25 °C) Parameter Quantum Efficiency at 375 nm Luminous B Radiant at 375 nm (Peak) Blue Sensitivity Index C Luminous D Radiant at 375 nm (Peak) Cathode Sensitivity Anode Sensitivity Gain D Anode Dark Current E (After 30 min Storage in Darkness) Pulse Hight Distribution F Anode Dark Counts at Plateau Voltage G ENI (Equivalent Noise Input) H Anode Pulse Rise Time J D Time Response Electron Transit Time K Transit Time Spread (FWHM) L M Current Hysteresis Anode Current Stability Voltage Hysteresis R2693 for General Purpose Min. Typ. Max. — — 20.5 — 30 50 — — 62 — — 7.0 — 100 300 — — 3.7 × 105 — — 6 × 106 5.0 — 0.5 — — — — — — — — 8.6 × 10-17 — — 1.2 — — 18 — — 1.0 — — 0.5 — — 1.0 R2693P for Photon Counting Min. Typ. Max. — 20.5 — 30 50 — — 62 — — 7.0 — 100 300 — — 3.7 × 105 — — — 6 × 106 — 2.0 0.1 — 50 20 — 50 10 — — 3.9 × 10-17 — — 1.2 — — 18 — — 1.0 — — 0.5 — — 1.0 Unit % µA/lm mA/W µA/lm-b A/lm A/W — nA s-1 s-1 W ns ns ns % % NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio Electrodes K Dy1 Dy2 Dy3 Ratio 1 1 1 1 • • • • Dy7 Dy8 Dy9 P 1 1 1 J: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. K: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. L: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. M: Hysteresis is temporary instability in anode current after light and voltage are applied. • • • • • SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode • • • • • • • • K Dy1 Dy2 Dy3 1 1 1 1 • • • • Dy7 Dy8 Dy9 P 1 2 1 SuppIy Voltage: Plateau Voltage, K: Cathode, Dy: Dynode, P: Anode where × 100 (%) l max. li l min. TIME 0 5 6 7 (minutes) TPMSB0002EA • • • • • E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 × 106 G: Plateau voltage at the test up in HPK H: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = lmin. li Dy7 Dy8 Dy9 P • 1 1 1 SuppIy Voltage: Note F, K: Cathode, Dy: Dynode, P: Anode Plateau Electrodes Ratio lmax. Hysteresis = ANODE CURRENT Pulse Height Distribution Electrodes K Dy1 Dy2 Dy3 Ratio 1 1 1 1 2q.ldb.G.∆f S q = Electronic charge (1.60 × 10-19 coulomb). ldb = Anode dark current (after 30 minutes storage) in amperes. G = Gain. ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. (1)Current Hysteresis The tube is operated at 750 V with an anode current of 1 µA for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Figure 3: Typical Spectral Response Figure 4: Typical Time Response TPMSB0060EA 200 CATHODE RADIANT SENSITIVITY TPMSB0061EA 100 80 60 10 40 QUANTUM EFFICIENCY TRAN TIME (ns) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 1 SIT TIM E 20 10 8 6 4 0.1 2 RISE 1 0.01 200 400 300 800 600 500 Figure 5: Typical Gain and Anode Dark Current (R2693) TPMSB0062EA 1.0 10-7 G N EN T GAIN 10-8 10-9 AR K C U R R 104 10-10 1500 TPMSB0063EA 0.8 SIGNAL+DARK 0.6 WAVELENGTH OF INCIDENT LIGHT : 400 nm : 1000 V SUPPLY VOLTAGE SIGNAL+DARK COUNTS : 5364 s-1 : 15 s-1 DARK COUNTS AMBIENT TEMPERATURE : +25 0.4 0.2 AN O D E D 103 COUNTS PER CHANNEL 106 FULL SCALE (SIGNAL+DARK): 1 × 104 FULL SCALE (DARK) : 1 × 103 10-6 ANODE DARK CURRENT (A) 107 105 1000 Figure 6: Typical Single Photoelectron Pulse Height Distribution (R2693P) 10-5 AI 700 SUPPLY VOLTAGE (V) WAVELENGTH (nm) 108 TIME DARK 102 0 10-11 101 300 400 500 600 800 1000 0 200 400 600 800 1000 CHANNEL NUMBER (ch) 10-12 1300 DISCRIMINATION LEVEL SUPPLY VOLTAGE (V) Figure 7: Typical Temperature Coefficient of Anode Sensitivity TPMSB0064EA 100 TPMSB0065EB +0.8 ANODE DARK CURRENT (nA) TEMPERATURE COEFFICIENT (%/°C) +1.2 Figure 8: Typical Temperature Characteristics of Dark Current (R2693) (at 1000 V, after 30 min storage) +0.4 0 -0.4 10 1 0.1 -0.8 -1.2 200 0.01 300 400 500 WAVELENGTH (nm) 600 700 0 20 40 60 TEMPERATURE (°C) 80 100 PHOTOMULTIPLIER TUBES R2693, R2693P Figure 9: Dimensional Outline and Basing Diagram (Unit: mm) Figure 10: Socket (Unit: mm) Sold Separately 29.0 ± 1.7 E678-11A 18 MIN. 49 38 PHOTOCATHODE 5 DY6 6 7 8 DY8 DY2 33 76 MAX. DY7 DY3 3 90 MAX. 49.0 ± 2.5 DY4 4 9 DY9 2 10 1 3.5 16 MIN. DY5 5 P 11 K DY1 DIRECTION OF LIGHT 18 4 29 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 HA COATING TPMSA0007ED Figure 11: D Type Socket Assembly (Unit: mm) TACCA0064EA Sold Separately E717-63 E717-74 HOUSING (INSULATOR) 10 P R10 49.0 ± 0.3 DY8 8 DY7 7 26.0±0.2 TOP VIEW 5 4 R1 to R10 : 330 kΩ C1 to C3 : 10 nF 31.0 ± 0.5 DY4 4 DY3 3 DY2 2 DY1 K 1 A G 2.7 R5 R4 HOUSING (INSULATOR) POTTING COMPOUND 22.4±0.2 K ° 10 R2 30° 8 -HV AWG22 (VIOLET) C2 DY7 7 R8 C1 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 R6 R5 R1 to R10 : 330 kΩ C1 to C3 : 10 nF R3 0.7 R1 11 DY8 R4 SIDE VIEW R3 C3 R9 R7 2 6 DY5 R10 9 32.0±0.5 C1 7 DY6 R6 0.7 30.0 +0 -1 450 ± 10 C2 R7 29.0 ± 0.3 SIGNAL OUTPUT (A) GND (G) 10 DY9 R8 SOCKET PIN No. P 9 R9 38.0 ± 0.3 C3 PMT 14.0±0.5 DY9 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 26.0±0.2 SOCKET PIN No. 32.0±0.5 PMT 3.5 33.0 ± 0.3 5 R2 R1 11 -HV (K) 4- 2.8 R13 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to +HV, and the pin "K" to the GND. BOTTOM VIEW TACCA0002EH * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. TACCA0277EA Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMS1014E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] JAN. 2007. 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