Data Sheet Schottky barrier Diode RB550VA-30 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 3)High reliability 2.5±0.2 Features 1)Small mold type（TUMD2） 2)Low VF, Low IR 0.8 0.5 2.0 1.3±0.05 TUMD2 Construction Silicon epitaxial planar Structure 0.8±0.05 0.6±0.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 8.0±0.2 2.75 4.0±0.1 1.43±0.05 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits 30 30 1 3 150 40 to 150 φ1.0±0.2 0 Typ. Max. Unit VF 2 - 0.45 0.48 0.49 0.52 V V IF=700mA IF=1A IR - 1 30 μA VR=10V 1/3 0.9±0.08 Unit V V A A °C °C Min. VF 1 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0 2.0±0.05 3.5±0.05 4.0±0.1 Conditions 2011.05 - Rev.D Data Sheet RB550VA-30 100000 Ta=75℃ Ta=150℃ REVERSE CURRENT:IR(uA) Ta=25℃ Ta=-25℃ 0.01 1000 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 10 10 15 20 25 1 30 0 470 460 450 Ta=25℃ VR=30V n=30pcs 25 20 15 10 AVE:3.141uA 5 180 170 160 150 140 130 120 VF DISPERSION MAP 100 IR DISPERSION MAP 30 Ct DISPERSION MAP 20 8.3ms 15 AVE:15.1A 10 5 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm REVERSE RECOVERY TIME:trr(ns) 30 20 AVE:149.9pF 110 0 440 15 10 AVE:8.3ns 5 0 0 Ifsm Ifsm 15 8.3ms 8.3ms 8.3ms 8.3ms 1cyc 1cyc 10 5 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 Ifsm t 20 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 IM=10mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 Mounted on epoxy board IF=0.2A 0.8 1ms time Rth(j-a) 300us 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 25 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 AVE:459.6mV 25 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 30 REVERSE CURRENT:IR(nA) Ta=25℃ IF=0.7A n=30pcs 480 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 490 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.001 FORWARD VOLTAGE:VF(mV) f=1MHz Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(A) 10000 Ta=125℃ 0.1 1000 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 D=1/2 0.6 Sin(θ＝180) DC 0.4 0.2 10 0.001 0 0.1TIME:t(s) 10 Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 2011.05 - Rev.D Data Sheet RB550VA-30 1.5 0A 0V DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 0.6 D=1/2 0.4 DC Sin(θ＝180) 0.2 T D=1/2 1 Io t VR D=t/T VR=15V Tj=150℃ 0.5 Sin(θ＝180) 0 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 30 1.5 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 150 Sin(θ＝180) 1 0.5 Io 0A 0V t T 0 0 DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1 0 25 50 VR D=t/T VR=15V Tj=150℃ 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A