Data Sheet Shottky barrier diode RB558W Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6±0.2 0.15± 0.05 1.3 Applications Low current rectification 0.6 0.6 EMD3 0.55± 0.1 0.5 0.5 1.0± 0.1 Construction Silicon epitaxial planar 0.7 (1) (2) 0.7 0～ 0.1 0.1Min 0.2±0.1 -0.05 1.6±0.2 0.8±0.1 (3) 0.7±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory Taping specifications (Unit : mm) φ1.55±0.1 φ1.5 0.1 00 2.0±0.05 0.3±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Limits Symbol VR Io IFSM Tj Tstg Unit V mA mA °C °C 30 100 500 125 40 to 125 (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 VF2 Min. - Typ. - Max. 0.35 Unit V - - 0.49 V IR - - 10 μA 1/3 Conditions IF=10mA IF=100mA VR=10V 2011.04 - Rev.B Data Sheet RB558W 10000 100 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 0.001 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 10 0 280 270 260 20 15 10 AVE:2.017uA 5 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 13 12 AVE:17.34pF Ifsm 5 10 0.1 100 Per diode time REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) IF=10mA 100 Per diode 0.08 0.08 10 10 0.1 0.1 Rth(j-a) Mounted on epoxy board 1 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP Rth(j-c) t 0 1 1ms 14 10 0 IM=1mA 15 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 16 IR DISPERSION MAP 10 1000 17 10 VF DISPERSION MAP 15 20 Ta=25℃ f=1MHz VR=0V n=10pcs 18 11 20 15 19 0 1cyc 10 20 AVE:270.2mV Ifsm 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ VR=10V n=30pcs 25 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 30 30 Ta=25℃ IF=10mA n=30pcs 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 290 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) f=1MHｚ 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1000 D=1/2 0.06 DC Sin(θ＝180) 0.04 0.06 0.04 DC Sin(θ＝180) 0.02 0.02 D=1/2 300us 1 0.001 0 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.04 - Rev.B Data Sheet RB558W 0.3 0.3 0.2 DC 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode Per diode Io 0A 0V t DC 0.2 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A