Data Sheet Schottky Barrier Diode RBQ30NS65A lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) BQ30NS 65A lFeatures 1)Cathode Common Dual type.(LPDS) 2)Low IR. ① lConstruction Silicon epitaxial planer lStructure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day ① ② ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*2) Junction temperature Tj Storage temperature Limits 65 65 30 100 150 -40 to +150 Tstg Unit V V A A °C °C (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C. lElectrical characteristics (Tj=25°C) Parameter Symbol VF Min. Typ. Max. Unit Forward voltage - - 0.69 V Reverse current IR - - 0.45 mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 Conditions IF=15A VR=65V 2011.11 - Rev.A Data Sheet RBQ30NS65A 100000 100 Ta=150°C Ta=125°C 10 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) 10000 Ta=150°C 1 Ta=75°C Ta=25°C 0.1 1000 Ta=125°C 100 Ta=75°C 10 1 Ta=25°C 0.1 Ta=-25°C Ta=-25°C 0.01 0.01 0 100 200 300 400 500 600 700 800 0 900 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 700 f=1MHz Ta=25°C IF=15A n=30pcs 690 680 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 1000 100 10 670 AVE:645.4mV 660 650 640 630 620 610 600 1 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 60 AVE:40.08mA 40 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1300 Ta=25°C VR=65V n=30pcs 80 REVERSE CURRENT:IR(mA) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 1290 Ta=25°C f=1MHz VR=0V n=10pcs 1280 1270 1260 1250 1240 AVE:1225.8pF 1230 1220 1210 1200 0 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.11 - Rev.A Data Sheet RBQ30NS65A 500 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 450 IFSM REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 1cyc 8.3ms 350 AVE:271.0A 300 250 200 150 100 25 20 AVE:16.1ns 15 10 5 50 0 0 IFSM DISPERSION MAP trr DISPERSION MAP 500 500 450 450 8.3ms 350 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 400 8.3ms 1cyc 300 250 200 150 100 IFSM 400 t 350 300 250 200 150 100 50 50 0 0 1 10 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 40 100 Rth(j-a) 10 1 30 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 35 Rth(j-c) 0.1 25 D=1/2 20 Sin(q=180) 15 10 DC 5 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 3/4 2011.11 - Rev.A Data Sheet RBQ30NS65A 7 60 0A 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 6 5 4 3 DC 2 Sin(q=180) t DC 40 T D=1/2 VR D=t/T VR=30V Tj=150°C 30 20 Sin(q=180) D=1/2 10 1 0 0 0 10 20 30 40 50 60 70 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 80 30 Io t 60 T DC No break at 30kV 25 VR D=t/T VR=30V Tj=150℃ ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io 0V 50 40 D=1/2 30 20 Sin(θ=180) 20 15 10 AVE:5.9kV 5 10 0 0 0 25 50 75 100 125 150 C=200pF R=0W CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) C=100pF R=1.5kW ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A