RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET CPT3 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) zApplication Switching zPackaging specifications Package Type zEquivalent Circuit Taping TL Code Basic ordering unit (pieces) ∗2 2500 RDD050N20 ∗1 BODY DIODE ∗2 GATE PROTECTION DIODE ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Pulsed Continuous Pulsed Drain Current Source Current (Body Diode) Avalanche Current Avalanche Energy Total Power Dissipation (TC=25°C) Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 IAS ∗2 EAS ∗2 PD Tch Tstg Limits 200 ±30 ±5 ±20 5 20 5 75 20 150 −55 to +150 (1)GATE (2)DRAIN (3)SOURCE Unit V V A A A A A mJ W °C °C (1) (2) (3) ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 6.25 °C/W 1/5 RDD050N20 Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit IGSS ⎯ ⎯ ±10 µA Drain-Source Breakdown Voltage V(BR) DSS 200 ⎯ ⎯ V ID=1mA, VGS=0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 25 µA VDS=200V, VGS=0V 2.0 ⎯ 4.0 V VDS=10V, ID=1mA ⎯ 0.55 0.72 Ω ID=2.5A, VGS=10V VDS=10V, ID=2.5A Parameter Gate-Source Leakage VGS (th) Gate Threshold Voltage Static Drain-Source On-State Resistance RDS (on) Forward Transfer Admittance ⏐Yfs⏐ ∗ ∗ Conditions VGS=±30V, VDS=0V 1.1 1.8 ⎯ S Input Capacitance Ciss ⎯ 292 ⎯ pF VDS=10V Output Capacitance Coss ⎯ 92 ⎯ pF VGS=0V Reverse Transfer Capacitance Crss ⎯ 28 ⎯ pF f=1MHz Turn-On Delay Time td (on) ∗ ⎯ 10 ⎯ ns ID=2.5A, VDD 100V tr ∗ ⎯ 22 ⎯ ns VGS=10V td (off) ∗ ⎯ 23 ⎯ ns RL=40Ω tf ∗ ⎯ 28 ⎯ ns RG=10Ω Total Gate Charge Qg ∗ ⎯ 9.3 ⎯ nC VDD=100V Gate-Source Charge Qgs ∗ ⎯ 2.8 ⎯ nC VGS=10V Gate-Drain Charge Qgd ∗ ⎯ 3.7 ⎯ nC ID=5A Rise Time Turn-Off Delay Time Fall Time ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Reverse recovery time Reverse recovery charge Symbol VSD trr Qrr ∗ Min. − − − Typ. − 117 0.37 Max. 1.5 − − Unit V ns µC Conditions IS= 5.0A, VGS=0V IDR= 5.0A, VGS=0V di/dt= 100A / µs ∗ Pulsed 2/5 RDD050N20 Transistors zElectrical characteristic curves 10 DRAIN CURRENT : ID (A) PW=100us DRAIN CURRENT :ID(A) 100 Ta=25°C 9 Pulsed 10 1ms 1 DC OPERATING 0.1 10V 8 9V 7 7V 6 5 6V 4 3 2 5V 1 Tc=25°C Single Pulsed 0.01 1 0 10 100 VDS=10V Pulsed 8V DRAIN CURRENT : ID (A) 100 10 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 VGS=4V 0 1000 2 4 6 8 0.01 10 12 14 16 18 20 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : ID (A) 4.8 4 3.2 2.4 1.6 0.8 0 -50 -25 0 25 50 75 100 125 150 10 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 10 1 0.01 CHANNEL TEMPERATURE : Tch (°C) 10 1 ID=5A 2.5A 0.5 10 -25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 0.75 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.5 0.2 0.05 0.05 0.1 0.2 0.5 1 2 5 2.5A 0.25 100 2 1 ID=5A 0.5 0 0 5 10 15 20 25 30 Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.1 0 -50 1.5 GATE-SOURCE VOLTAGE : VGS (V) VDS=10V Pulsed 5 FORWARD TRANSFER ADMITTANCE :⏐Yfs⏐(S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1.5 1 Ta=25°C Pulsed 1.25 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V Pulsed 2 0.1 2 1.75 DRAIN CURRENT : ID (A) Fig.4 Gate Threshold Voltage vs. Channel Temperature 2.5 VGS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VDS=10V ID=1mA 5.6 REVERSE DRAIN CURRENT : IDR (A) 6.4 Fig.3 Typical Transfer Characteristics Fig.2 Typical Output Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) GATE THRESHOLD VOLTAGE : VGS (th) (V) Fig.1 Maximum Safe Operating Area 10 20 DRAIN CURRENT : ID (A) Fig.8 Forward Transfer Admittance vs. Drain Current VGS=0V Pulsed 10 1 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse Drain Current vs. Source-Drain Voltage 3/5 RDD050N20 Transistors 100 Coss 10 f=1MHz VGS=0V Ta=25°C Pulsed 1 0.1 1 Crss 10 100 1000 DRAIN SOURCE VOLTAGE : VDS (V) Fig.10 Typical Capacitance vs. Drain-Source Voltage SWITCHING TIME : t (ns) 1000 VDS 160 VGS 140 VDD=40V VDD=100V VDD=160V 120 100 10 80 60 VDD=40V VDD=100V VDD=160V 40 20 0 0 2 4 6 8 10 12 0 14 TOTAL GATE CHARGE : Qg (nC) Fig.11 Dynamic Input Characteristics 1000 REVERSE RECOVERY TIME : trr (ns) DRAIN-SOURCE VOLTAGE : IDS (V) CAPACITANCE : C (pF) Ciss 20 Ta=25°C ID=5A Pulsed 180 GATE-SOURCE VOLTAGE : VGS (V) 200 1000 Ta=25°C di / dt=100A / µs VGS=0V Pulsed 100 1 0.1 1 10 REVERSE DRAIN CURRENT : IDR (A) Fig.12 Reverse Recovery Time vs. Reverse Drain Current Ta=25°C VDD=100V VGS=10V RQ=10Ω Pulsed tf 100 td (off) tr 10 td (on) 1 0.1 1 10 DRAIN CURRENT : ID (A) Fig.13 Switching Characteristcs 4/5 RDD050N20 Transistors zSwitching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.2-1 Gate charge measurement circuit Fig.3-1 Avalanche measurement circuit Fig.1-2 Switching waveforms Fig.2-2 Gate charge waveform Fig.3-2 Avalanche waveform 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0