Data Sheet Super Fast Recovery Diode RF1501NS3S Series Ultra Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) RF1501 NS3S Applications General rectification ① Features 1)Ultra low switching loss 2)High current overload capacity ② Structure ROHM : LPDS JEITA : TO263S Manufacture Year, Week and Day ① Construction Silicon epitaxial planer ① ③ Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25°C) Parameter Symbol VRM Repetitive peak reverse voltage VR Reverse voltage Average rectified forward current Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristics (Tj=25°C) Parameter Symbol VF Forward voltage Conditions Duty≤0.5 Direct voltage 60Hz half sin wave resistive load at Tc=54°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Limits 350 300 20 Unit V V A 100 A 150 - 55 to +150 °C °C Conditions IF=20A Min. Typ. Max. Unit － 1.35 1.5 V Reverse current IR VR=300V － 0.06 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR － 22 30 ns Rth(j-c) junction to case － － 2.5 °C/W Thermal resistance www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A Data Sheet RF1501NS3S 1000000 100 Tj=150°C 100000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10 Tj=125°C Tj=25°C 1 Tj=75°C 0.1 0.01 Tj=150°C 10000 1000 Tj=75°C 100 Tj=25°C 10 1 0.001 0 500 1000 1500 2000 0 2500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 50 100 150 200 250 350 1400 f=1MHz IF=20A Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 300 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 100 1300 1200 AVE:1234mV 1100 1000 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 400 1000 VR=300V Tj=25°C 100 AVE:18.2nA 10 f=1MHz VR=0V Tj=25°C 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) Tj=125°C 380 370 360 350 340 AVE:356pF 330 320 310 1 300 IR DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.09 - Rev.A 400 REVERSE RECOVERY TIME:trr(ns) 30 350 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RF1501NS3S IFSM 8.3ms 300 1cyc. 250 AVE:269A 200 150 Tj=25°C IF=0.5A IR=1A Irr=0.25×IR n=10pcs 25 20 15 AVE:16.6ns 10 5 0 100 trr DISPERSION MAP IFSM DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 100 10 1 100 10 1 10 100 1 10 30 10 No break at 30kV TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 0 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS C=200pF R=0Ω C=100pF R=1.5kΩ 1 0.1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rth(j-c) 3/4 2011.09 - Rev.A 60 20 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=0.8 D=0.5 40 half sin wave D=0.2 30 D=0.1 D=0.05 20 D.C. D=0.8 18 D.C. FORWARD POWER DISSIPATION:Pf(W) Data Sheet RF1501NS3S D=0.5 16 half sin wave Io 0V VR t D=0.2 D=t/T VR=350V Tj=150°C On glass-epoxy substrate soldering land 2mm□ 60 90 14 12 10 8 0A T D=0.1 6 D=0.05 4 10 2 0 0 0 10 20 30 40 0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 30 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 35 D.C. 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 Io D=0.8 0V 25 t D=0.5 T VR D=t/T VR=350V Tj=150°C 20 half sin wave 15 D=0.2 10 D=0.1 D=0.05 5 0 0 30 60 90 120 150 CASE TEMPERATURE:Tl(°C) DERATING CURVE (Io-Tl) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A