[ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.500Ω Ordering Information PART NUMBER PACKAGE BRAND RFM12N35 TO-204AA RFM12N35 RFM12N40 TO-204AA RFM12N40 Formerly developmental type TA17434. Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1787.1 RFM12N35, RFM12N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL RFM12N35 350 350 12 24 ±20 150 1.2 -55 to 150 RFM12N40 400 400 12 24 ±20 150 1.2 -55 to 150 UNITS V V A A V W W/oC oC 260 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Drain to Source Breakdown Voltage RFM12N35 BVDSS TEST CONDITIONS MIN TYP MAX UNITS 350 - - V 400 - - V VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = Rated BVDSS, VGS = 0 - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 125oC - - 25 µA ID = 250mA, VGS = 0V RFM12N40 Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current IDSS VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 12A, VGS = 10V, (Figures 6, 7) - - 0.500 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 6A, VGS = 10V - - 3 V ID = 12A, VGS = 10V - - 6.0 V ID ≈ 6A, VDS = 200V, RG = 50Ω, VGS = 10V, RL = 33Ω, (Figures 10, 11, 12) - 30 50 ns - 105 150 ns td(OFF) - 480 750 ns tf - 140 200 ns Gate to Source Leakage Current IGSS Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance Thermal Resistance Junction to Case VGS = 0V, VDS = 25V, f = 1MHz (Figures 9) - - 3000 pF - - 900 pF CRSS - - 400 pF RθJC - - 0.83 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 6A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 950 - ns NOTE: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 5-2 RFM12N35, RFM12N40 Unless Otherwise Specified 1.2 14 1.0 12 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 10 8 6 4 0.2 2 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 10 DC OPERATION OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS (MAX) = 350V RFM12N35 VDSS (MAX) = 400V RFM12N40 1 15 VGS = 5V 10 5 VGS = 4V 0 10 0 1000 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.7 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) ID(ON), DRAIN TO SOURCE CURRENT (A) 6 8 0.8 TC = 25oC 20 10 TC = 125oC 10 12 14 16 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% TC = 125oC 0.6 0.5 TC = 25oC 0.4 TC = -40oC 0.3 0.2 0.1 TC = -40oC 1 4 FIGURE 4. SATURATION CHARACTERISTICS VDS = 10V PULSE DURATION = 80µs DUTY CYCLE ≤ 2% 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 30 VGS = 20V VGS = 8-10V VGS = 7V VGS = 6V 20 ID (MAX) CONTINUOUS 0.1 150 25 TC = 25oC 1 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 50 0 6 FIGURE 5. TRANSFER CHARACTERISTICS 0 10 20 30 ID, DRAIN CURRENT (A) FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 40 RFM12N35, RFM12N40 Typical Performance Curves NORMALIZED GATE THRESHOLD VOLTAGE ID = 12A VGS = 10V 3 2 1 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 2 1.5 1 0.5 0 -50 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 VDS, DRAIN TO SOURCE VOLTAGE (V) 4000 C, CAPACITANCE (pF) ID = 250µA VGS = VDS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 3000 CISS 2000 1000 COSS CRSS 300 VDD = BVDSS GATE SOURCE VOLTAGE RL = 33.3Ω IG(REF) = 2.5mA VGS = 10V 200 8 VDD = BVDSS 6 4 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 100 2 DRAIN SOURCE VOLTAGE 0 0 0 10 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 4 Unless Otherwise Specified (Continued) 0 20 IG(REF) t, TIME (µs) IG(ACT) 80 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and 7260. FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4