Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Symbol VCES VGES Ic ic(peak) Note1 PC Note2 j-c Tj Tstg Ratings 360 ±30 35 250 60 2.08 150 –55 to +150 Unit V V A A W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Tc = 25C R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Page 1 of 6 RJP30H2DPK-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min — — 2.5 — — — — — — — — — — — Typ — — — 1.4 1200 60 30 37 6 10 0.02 0.1 0.06 0.18 Max 1 ±100 5 1.9 — — — — — — — — — — Unit A nA V V pF pF pF nC nC nC s s s s Test Conditions VCE = 360 V, VGE = 0 VGE = ± 30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 35 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 150 V IC = 35 A IC = 35 A RL = 4.5 VGE = 15 V RG = 5 Notes: 3. Pulse test. R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Page 2 of 6 RJP30H2DPK-M0 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics (1) 10 100 Collector Current IC (A) 100 μs PW = 10 10 s 0μ Collector Current IC (A) 1000 1 0.1 Ta = 25°C 1 shot pulse 0.01 0.1 80 7V 6.5 V 8V 10 V 15 V 60 6V 40 5.5 V 20 VGE = 5 V 0 1 10 100 0 1000 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics 200 50 Collector Current IC (A) 12 V 160 8V 15 V 7V 120 Ta = 25°C Pulse Test 80 VCE = 10 V Pulse Test 9V 10 V Collector Current IC (A) Ta = 25°C Pulse Test 6V 40 40 Tc = 75°C 25°C 30 –25°C 20 10 VGE = 5 V 0 0 0 2 4 6 8 10 0 IC = 35 A 80 A 120 A 3 2 1 Pulse Test Ta = 25°C 0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 6 8 10 Collector to Emitter Saturation Voltage vs. Collector Current (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 4 4 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) 5 2 10 VGE = 15 V Pulse Test Tc = –25°C 1 25°C 75°C 0.1 1 10 100 Collector Current IC (A) Page 3 of 6 RJP30H2DPK-M0 Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Capacitance C (pF) VGE = 0 V, f = 1 MHz Ta = 25°C Cies 1000 100 Coes Cres 10 0 20 40 60 80 100 400 300 VGE 12 200 8 100 4 VCE 0 0 8 16 24 32 0 40 Colloctor to Emitter Voltage VCE (V) Gate Charge Qg (nC) Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 1000 1000 VCC = 150 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C IC = 35 A, VGE = 15 V RL = 4.5 Ω, Ta = 25°C Switching Time t (ns) Switching Time t (ns) 16 VCC = 150 V IC = 35 A Ta = 25°C Gate to Emitter Voltage VGE (V) 10000 Colloctor to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) tf 100 td(off) tr tf tr 100 td(off) td(on) td(on) 10 10 1 10 100 1 10 100 Gate Resistance Rg (Ω) Colloctor Current IC (A) Switching Characteristics (Typical) (3) 1000 Switching Time t (ns) IC = 35 A, VGE = 15 V RL = 4.5 Ω, Rg = 5 Ω tf tr 100 td(off) td(on) 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Page 4 of 6 RJP30H2DPK-M0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 0.1 θj−c(t) = γs (t) θj−c θj−c = 2.08°C/W, Tc = 25°C 0.05 0.02 1 PDM tp ho 10 μ PW T PW T 1s 0.01 D= ul se 0.0 0.03 100 μ 1m 10 m 100 m 1 Pulse Width PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. Vin = 15 V VCC Ic 10% 10% td(on) tr ton R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 90% td(off) tf toff Page 5 of 6 RJP30H2DPK-M0 Preliminary JEITA Package Code ⎯ RENESAS Code PRSS0004ZH-A Previous Code TO-3PSG/TO-3PSGV 15.60 ± 0.2 13.60 MASS[Typ.] 3.7g Unit: mm 4.80 ± 0.2 0.60 ± 0.2 φ3.2 ± 0.2 20.0 ± 0.2 2.0 2.4 0.50typ 18.70 ± 0.2 1.0 3.50 14.90 ± 0.1 3.8 Package Name TO-3PSG 5.00 ± 0.3 Package Dimension 1.40 3-1.00 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 0.60 ± 0.1 1.50 ± 0.2 2.825 ± 0.15 Ordering Information Orderable Part Number RJP30H2DPK-M0-T2 R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Quantity 360 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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