Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 1. Gate 2. Collector 3. Emitter G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Symbol VCES VGES IC IC ic(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 600 ±30 45 22 90 140 0.89 150 –55 to +150 Unit V V A A A W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Page 1 of 6 RJP60D0DPK Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Short circuit withstand time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc Min — — 4.0 — — — — — — — — — — — — 3.0 Typ — — — 1.6 2.0 1050 70 32 45 6 20 35 20 90 70 5.0 Max 5 ±1 6.0 2.2 — — — — — — — — — — — — Unit A A V V V pF pF pF nC nC nC ns ns ns ns s Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 22 A, VGE = 15 V Note3 IC = 45 A, VGE = 15 V Note3 VCE = 20 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 22 A VCC = 300 V, VGE = 15 V IC = 22 A Rg = 5 Inductive load) VCC 360 V, VGE = 15 V Notes: 3. Pulse test R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Page 2 of 6 RJP60D0DPK Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 50 Collector Current IC (A) Collector Dissipation Pc (W) 200 160 120 80 40 0 25 50 75 20 10 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 100 100 PW 10 0μ = 10 s Collector Current IC (A) 1000 μs 10 1 0.1 1 80 60 40 20 Tc = 25°C Single pulse 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics Pulse Test Ta = 25°C 80 Pulse Test Ta = 150°C 12 V 80 Collector Current IC (A) Collector Current IC (A) 30 0 0 Collector Current IC (A) 40 10 V 15 V 60 18 V 40 VGE = 8 V 20 0 12 V 15 V 10 V 60 18 V 40 VGE = 8 V 20 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 6 Preliminary Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 8 Ta = 25°C Pulse Test 6 IC = 22 A 4 45 A 2 0 0 4 8 12 16 20 Collector to Emitter Satularion Voltage VCE(sat) (V) Collector to Emitter Satularion Voltage VCE(sat) (V) RJP60D0DPK 8 Ta = 150°C Pulse Test 6 IC = 22 A 4 45 A 2 0 0 8 12 20 16 Gate to Emitter Voltage VGE (V) Switching Caracteristics (Typical) (1) Switching Caracteristics (Typical) (2) 100 Swithing Energy Losses E (μJ) 10000 td(off) tf td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 1 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 1000 Eoff 100 Eon 10 10 100 1 1000 Swithing Energy Losses E (μJ) VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25°C 100 td(off) td(on) tf tr Eoff Eon 100 VCC = 300 V, VGE = 15 V IC = 22 A, Ta = 25°C 10 10 2 5 10 20 Gate Registance Rg (Ω) (Inductive load) R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 100 Switching Caracteristics (Typical) (4) Switching Caracteristics (Typical) (3) 1000 10 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Times t (ns) 4 Gate to Emitter Voltage VGE (V) 1000 Switching Times t (ns) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 50 2 5 10 20 50 Gate Registance Rg (Ω) (Inductive load) Page 4 of 6 RJP60D0DPK Preliminary Transfer Characteristics (Typical) Collector Current IC (A) 80 Ta = 25°C 60 150°C 40 20 VCE = 10 V Pulse Test 0 0 4 8 12 16 Gate to Emitter Voltage VGE (V) Thermal Impedance θch – c (°C/W) Thermal Impedance vs. Pulse Width 10 1 0.1 Tc = 25°C Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform 90% Diode clamp/ D.U.T Vin L 10% 90% Rg D.U.T/ Driver VCC Ic tr ton R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 10% 10% td(on) 90% td(off) tf toff Page 5 of 6 RJP60D0DPK Preliminary Package Dimension JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Ordering Part No. RJP60D0DPK-00-T0 R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Quantity 360 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. 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