ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: [email protected] http://www.roithner-laser.com RLT8340MG TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs double heterostructure Lasing wavelength: 830 nm typ. Max. optical power: 40 mW, single mode Package: 5.6 mm LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature Top Storage Temperature Tstg RATING 40 2 30 -10 .. +50 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Threshold Current Ith cw 15 25 Operation Current Iop Po = 40 mW 70 80 90 Operation Voltage Vop Po = 40 mW 1.8 2.2 Lasing Wavelength P = 40 mW 820 830 840 λp o Beam Divergence Po = 40 mW 8 10 11 θ// Beam Divergence Po = 40 mW 25 31 40 θ⊥ Monitor Current Im Po = 40 mW, Vr=5V 400 600 800 UNIT mA mA V nm ° ° µA