CCD area image sensor S10140/S10141 series Low readout noise, high resolution (pixel size: 12 Njm) S10140/S10141 series is a family of back-thinned FFT-CCD image sensors speci¿cally designed for low-light-level detection in scienti¿c applications. By using the binning operation, S10140/S10141 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S10140/S10141 series ideally suited for use in spectrophotometry. The binning operation offers signi¿cant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S10140/S10141 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S10140/S10141 series has an effective pixel size of 12 × 12 Njm and is available in image areas ranging from 12.288 (H) × 1.464 (V) mm2 (1024 × 122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm2 (2048 × 506 pixels). Features Applications Low readout noise: 4 e-rms typ. Fluorescence spectrometer, ICP High resolution: pixel size 12 × 12 Njm Industrial inspection requiring Non-cooled type: S10140 series One-stage TE-cooled type: S10141 series Semiconductor inspection DNA sequencer Line, pixel binning, area scanning Greater than 90% quantum ef¿ciency at peak sensitivity wavelength Low-light-level detection Raman spectroscopy Wide spectral response range Wide dynamic range MPP operation High UV sensitivity with good stability Same pin connections as S7030/S7031 series Selection guide Type No. S10140-1007 S10140-1008 S10140-1009 S10140-1107 S10140-1108 S10140-1109 S10141-1007S S10141-1008S S10141-1009S S10141-1107S S10141-1108S S10141-1109S Cooling Non-cooled One-stage TE-cooled Number of total pixels 1044 1044 1044 2068 2068 2068 1044 1044 1044 2068 2068 2068 × × × × × × × × × × × × 128 256 512 128 256 512 128 256 512 128 256 512 Number of active pixels 1024 × 122 1024 × 250 1024 × 506 2048 × 122 2048 × 250 2048 × 506 1024 × 122 1024 × 250 1024 × 506 2048 × 122 2048 × 250 2048 × 506 www.hamamatsu.com Active area [mm (H) × mm (V)] 12.288 × 1.464 12.288 × 3.000 12.288 × 6.072 24.576 × 1.464 24.576 × 3.000 24.576 × 6.072 12.288 × 1.464 12.288 × 3.000 12.288 × 6.072 24.576 × 1.464 24.576 × 3.000 24.576 × 6.072 Suitable multichannel detector head C10150 C10151 1 CCD area image sensor S10140/S10141 series General ratings Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package Window*1 S10140 series S10141 series 12 (H) × 12 (V) m 2 phases 2 phases One-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outlines) Quartz glass AR-coated sapphire *1: Temporary window type (ex. S10140-1107N) is available upon request. Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*2 Storage temperature Output transistor drain voltage Reset drain voltage Vertical input source voltage Horizontal input source voltage Vertical input gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +50 +70 +30 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V Min. 23 11 2.5 -9 -9 2.5 -9 4 -9 4 -9 4 -9 2.5 -9 90 Typ. 24 12 3 0 VRD VRD -8 -8 3 -8 5 -8 5 -8 5 -8 3 -8 100 Max. 25 13 3.5 3.5 -7 6 -7 6 -7 6 -7 3.5 -7 110 Unit V V V V V V V V *2: Package temperature (S10140 series), chip temperature (S10141 series) Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage vertical input source horizontal input source Test point vertical input gate horizontal input gate High Vertical shift register clock voltage Low High Horizontal shift register clock voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low External load resistance Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL RL V V V V V k: 2 CCD area image sensor S10140/S10141 series Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer ef¿ciency*3 DC output level*4 Output impedance*4 Power consumption*4 *5 S1014*-1007 S1014*-1008/-1107 S1014*-1108/-1009 S1014*-1109 S1014*-1007/-1008/-1009 S1014*-1107/-1108/-1109 S1014*-1007/-1008/-1009 S1014*-1107/-1108/-1109 Symbol fc CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Vout Zo P Min. 0.99995 16 - Typ. 250 800 1600 3200 6400 80 150 30 30 50 70 0.99999 17 8 4 Max. 500 18 - Unit kHz Max. 6 1000 50 18 ±10 0 10 3 0 Unit V pF pF pF pF pF V k: mW *3: Charge transfer ef¿ciency per pixel, measured at half of the full well capacity *4: The values depend on the load resistance. (Typ. VOD=24 V, Load resistance=100 k:) *5: Power consumption of the on-chip ampli¿er plus load resistance Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Saturation output voltage Vertical Horizontal Full well capacity Summing CCD node sensitivity 25 °C Dark current*6 MPP mode 0 °C Readout noise*7 Line binning Dynamic range*8 Area scanning Photo response non-uniformity*9 Spectral response range White spots Point defect*10 Black spots Blemish Cluster defect*11 Column defect*12 *6: *7: *8: *9: Symbol Vsat Fw Sv DS Nr DR PRNU O - Min. 45 120 150 4 30000 15000 - Typ. Fw × Sv 60 150 200 5 100 5 4 37500 18500 ±3 200 to 1100 - keV/ee-/pixel/s e- rms % nm - Dark current nearly doubles for every 5 to 7 °C increase in temperature. -50 °C, Operating frequency is 20 kHz. Dynamic range = Full well/Readout noise Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm) Fixed pattern noise (peak to peak) Photo response non-uniformity (PRNU) = × 100 [%] Signal *10: White spots Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C. Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half of the saturation charge) *11: 2 to 9 contiguous defective pixels *12: 10 or more contiguous defective pixels 3 CCD area image sensor S10140/S10141 series Spectral response (without window)*13 (Typ. Ta=25 °C) 100 Back-thinned S10140/S10141 series 90 Quantum efficiency (%) 80 70 60 50 40 30 Front-illuminated (UV coat) 20 10 0 200 Front-illuminated 400 600 800 1000 1200 Wavelength (nm) KMPDB0254EB *13: Spectral response with quartz glass or AR-coated sapphire are decreased according to the spectral transmittance characteristics of window material. Spectral transmittance characteristics Dark current vs. temperature (Typ. Ta=25 °C) 100 (Typ.) 1000 90 80 100 70 Dark current (e-/pixel/s) Transmittance (%) Quartz window AR coated sapphire 60 50 40 30 20 10 1 0.1 10 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) 0.01 -50 -40 -30 -20 -10 0 10 20 30 Temperature (°C) KMPDB0110EA KMPDB0255EA Window material Type No. S10140 series S10141 series S10142 series (two-stage TE-cooled types, made to order) *14: Resin sealing *15: Hermetic sealing Window material Quartz glass*14 (option: window-less) AR-coated sapphire*15 (option: window-less) AR-coated sapphire*15 (option: window-less) 4 CCD area image sensor S10140/S10141 series Device structure (Conceptual drawing of top view) Thinning 23 15 20 21 13 14 24 1 n H 2 5 4 3 2 12345 4-bevel Thinning V signal out 2-bevel 22 12 2 11 3 4 5 4 blank pixels 8 2 6-bevel n V=122, 250, 50 H=1024, 2048 10 9 4 blank pixels signal out 6-bevel KMPDC0244EB 5 CCD area image sensor S10140/S10141 series Timing chart Line binning Integration period (Shutter must be open) Tpwv 1 Vertical binning period (Shutter must be closed) 3..126 127 3..254 255 3..510 511 2 P1V Readout period (Shutter must be closed) 128← 122 + 6 (bevel): S1014*-1007/-1107 256← 250 + 6 (bevel): S1014*-1008/-1108 512← 506 + 6 (bevel): S1014*-1009/-1109 Tovr P2V, TG P1H 1 2 1044: S1014*-1007/-1008/-1009 2068: S1014*-1107/-1108/-1109 4..1042 1043 4..2066 2067 Tpwh, Tpws 3 P2H, SG Tpwr RG OS D1 D2 S1..S1024 D19 D3..D10, S1..S2048, D11..D18 D20 : S1014*-1007/-1008/-1009 : S1014*-1107/-1108/-1109 KMPDC0242EB Parameter P1V, P2V, TG*16 P1H, P2H*16 SG RG TG – P1H S1014*-1007 S1014*-1008/-1107 Pulse width S1014*-1009/-1108 S1014*-1109 Rise and fall time Pulse width Rise and fall time Duty ratio Pulse width Rise and fall time Duty ratio Pulse width Rise and fall time Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 1.5 3 6 12 20 1000 10 40 1000 10 40 100 5 1 Typ. 2 4 8 16 2000 50 2000 50 1000 2 Max. 60 60 - Unit s ns ns ns % ns ns % ns ns s *16: The clock pulses should be overlapped at 50% of clock pulse amplitude. 6 CCD area image sensor S10140/S10141 series Area scanning Integration period (Shutter must be open) Tpwv 1 2 Readout period (Shutter must be closed) 4..127 128←122 + 6 (bevel): S1014*-1007/-1107 4..255 256←250 + 6 (bevel): S1014*-1008/-1108 4..511 512←506 + 6 (bevel): S1014*-1009/-1109 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG Enlarged view Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 S1..S1024 D4 D18 D5..D10, S1..S2048, D11..D17 D19 D20 : S1014*-1007/-1008/-1009 : S1014*-1107/-1108/-1109 KMPDC0243EB Parameter P1V, P2V, TG*17 P1H, P2H*17 SG RG TG – P1H S1014*-1007 S1014*-1008/-1107 Pulse width S1014*-1009/-1108 S1014*-1109 Rise and fall time Pulse width Rise and fall time Duty ratio Pulse width Rise and fall time Duty ratio Pulse width Rise and fall time Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 1.5 3 6 12 20 1000 10 40 1000 10 40 100 5 1 Typ. 2 4 8 16 2000 50 2000 50 1000 2 Max. 60 60 - Unit s ns ns ns % ns ns % ns ns s *17: The clock pulses should be overlapped at 50% of clock pulse amplitude. 7 CCD area image sensor S10140/S10141 series Dimensional outlines (unit: mm) Window 16.3* Window 28.6* Active area 12.29 Active area 24.58 24 22.4 ± 0.30 1 12 3.0 4.8 ± 0.49 4.4 ± 0.44 3.0 Photosensitive surface 3.8 ± 0.44 4.8 ± 0.49 4.4 ± 0.44 3.8 ± 0.44 2.4 ± 0.15 1st pin indication pad 2.4 ± 0.15 44.0 ± 0.44 34.0 ± 0.34 Photosensitive surface 12 2.54 ± 0.13 2.54 ± 0.13 1st pin indication pad 13 A 8.2* A 1 22.9 ± 0.30 13 22.4 ± 0.30 24 8.2* S10140-1107/-1108/-1109 22.9 ± 0.30 S10140-1007/-1008/-1009 (24 ×) 0.5 ± 0.05 (24 ×) 0.5 ± 0.05 S10140-1107: A=1.464 S10140-1108: A=3.000 S10140-1109: A=6.072 S10140-1007: A=1.464 S10140-1008: A=3.000 S10140-1009: A=6.072 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph. * Size of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph. KMPDA0207EB KMPDA0208EB 8 CCD area image sensor S10140/S10141 series S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S Window 16.3* Window 28.6* Active area 12.29 Active area 24.58 13 24 22.9 ± 0.30 19.0 22.4 ± 0.30 4.0 A 8.2* 22.9 ± 0.30 19.0 4.0 22.4 ± 0.30 13 A 8.2* 24 12 1 2.54 ± 0.13 1 12 44.0 ± 0.44 2.54 ± 0.13 52.0 34.0 ± 0.34 60.0 ± 0.30 42.0 (24 ×) 0.5 1.0 3.0 S10141-1007S: A=1.464 S10141-1008S: A=3.000 S10141-1009S: A=6.072 7.7 ± 0.68 1.0 TE-cooler TE-cooler (24 ×) 0.5 ± 0.05 7.3 ± 0.63 Photosensitive surface 6.7 ± 0.63 4.8 ± 0.15 1st pin indication pad 3.0 7.7 ± 0.68 7.3 ± 0.63 Photosensitive surface 6.7 ± 0.63 1st pin indication pad 4.8 ± 0.15 50.0 ± 0.30 S10141-1107S: A=1.464 S10141-1108S: A=3.000 S10141-1109S: A=6.072 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph. KMPDA0210EC * Size of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph. KMPDA0209EC 9 CCD area image sensor S10140/S10141 series Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*18 P2V P1V SS ISV IG2V IG1V RG S10140 series Function Reset drain Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*18 P2V P1V Th1 Th2 PP+ SS ISV IG2V IG1V RG S10141 series Function Reset drain Output transistor source Output transistor drain Output gate Summing gate Remark (standard operation) +12 V RL=100 k: +24 V +3 V Same pulse as P2H CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Thermistor Thermistor TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate -8 V -8 V Connect to RD Same pulse as P2V GND Connect to RD -8 V -8 V *18: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. Speci¿cations of built-in TE-cooler (Typ.) Parameter Internal resistance Maximum current*19 Maximum voltage Maximum heat absorption*21 Maximum temperature of heat radiating side Symbol Condition Rint Ta=25 °C Imax Tc*20=Th*21=25 °C Vmax Tc*20=Th*21=25 °C Qmax - S10141-1007S/-1008S/-1009S 2.5 1.5 3.8 3.4 S10141-1107S/-1108S/-1109S 1.2 3.0 3.6 5.1 Unit : A V W 70 70 °C *19: If the current greater than this value Àows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *20: Temperature of the cooling side of thermoelectric cooler. *21: Temperature of the heat radiating side of thermoelectric cooler. *22: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 10 CCD area image sensor S10140/S10141 series (Typ. Ta=25 °C) Voltage vs. Current CCD temperature vs. Current 4 0 3 -10 2 -20 -30 1 -30 -40 2.0 0 0 3 -10 2 -20 1 1.0 1.5 20 10 4 0.5 30 5 10 0 Voltage vs. Current CCD temperature vs. Current 6 20 5 0 (Typ. Ta=25 °C) 7 Voltage (V) 6 30 CCD temperature (°C) 7 Voltage (V) S10141-1107S/-1108S/-1109S 0 1 Current (A) 2 3 4 CCD temperature (°C) S10141-1007S/-1008S/-1009S -40 Current (A) KMPDB0178EA KMPDB0179EA Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 1 MΩ The characteristics of the thermistor used are as follows. R298=10 k: B298/323=3450 K Resistance RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: resistance at absolute temperature T1 [K] RT2: Resistance at absolute temperature T2 [K] BT1/T2: B constant [K] 100 kΩ 10 kΩ 220 240 260 280 300 Temperature (K) KMPDB0111EB 11 CCD area image sensor S10140/S10141 series Precaution for use (Electrostatic countermeasures) O Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. O Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. O Provide ground lines or ground connection with the work-Àoor, work-desk and work-bench to allow static electricity to discharge. O Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Multichannel detector heads C10150, C10151 Features Designed for back-thinned CCD area image sensor C10150: for non-cooled type (S10140 series) C10151: for TE-cooled type (S10141 series) Line binning operation/area scanning operation Driver/amplifier circuit for low noise CCD operation Highly stable temperature controller (C10151) Cooling temperature: -10 ± 0.05 °C Simple signal input operation Compact configuration Multichannel detector head controller C7557-01 Features For control of multichannel detector head and data acquisition Easy control and data acquisition using supplied software via USB interface 12 CCD area image sensor S10140/S10141 series Connection example Shutter * timing pulse AC cable (100 to 240 V; included with the C7557-01) Trig. POWER Dedicated cable (Included with the C7557-01) SIGNAL I/O USB cable (Included with the C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0402EA Information described in this material is current as of January, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1094E07 Jan. 2011 DN 13