Equivalent circuit SAP09P B C Application: Audio IC –10 A IB –1 A PC 80 ( Tc=25°C) W 10 mA 150 °C –40 to +150 °C Tj Tstg typ Unit max –100 µA –100 µA IEBO VEB = – 5V VCEO IC = – 30mA –150 hFE ✽ VCE = – 4V, IC = – 6A 5000 VCE (sat) IC = – 6A, IB = – 6mA –2.0 V VBE (sat) IC = – 6A, IB = – 6mA –2.5 V (36°) V 20000 a b VCE = – 20V, IC = – 40mA 1230 mV IF = 2.5mA 1580 mV Di VF IE =1A RE 0.176 0.22 IC – VCE Characteristics (Typical) 2.54±0.1 –0.8mA –10m –1.5mA –1.8mA –0.5mA –6 –0.3mA –4 IB = –0.2mA –2 0 –2 0 –2 IC = –8A –6A –4A –1 j-a (°C/W) Transient Thermal Resistance DC Current Gain hFE –30°C 5000 1000 500 200 –0.03 –0.1 –0.5 –1 –5 0 –0.3 –1 –5 –50 –100 1 0.5 0.1 1 5 10 50 100 500 1000 2000 Time t (ms) PC – Ta Derating Safe Operating Area (Single Pulse) 80 10 D. –5 s at 40 k in Without Heatsink Natural Cooling he –0.5 ite –1 60 fin In C ith 10 m s 0m s –10 W Maximum Power Dissipation Pc (W) –30 20 –0.1 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage VCE (V) 166 –200 3.5 0 –6 –4 125°C 25°C Without Heatsink 0 25 50 75 100 0 0 –1 –2 Base-Emitter Voltage VBE (V) Characteristics Collector Current IC (A) Collector Current IC (A) –10 3 –10 (VCE = –4V) –30°C j-a – t 25°C 10000 IC – VBE Temperature Characteristics (Typical) –2 Base Current IB (mA) 125°C D B –8 hFE – IC Characteristics (Typical) 50000 C –10 Collector-Emitter Voltage VCE (V) (VCE = –4V ) Weight: Approx 8.3g a. Part No. b. Lot No. 4±0.1 –3 –6 –4 +0.2 0.65 –0.1 3.81±0.1 (12.7) Collector Current IC (A) –1.0mA (18) 2.54±0.1 (7.62) 17.8±0.3 VCE(sat) – IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) mA 3 –1. A Collector Current IC (A) –8 1±0.1 +0.2 0.8 –0.1 3.81±0.1 Ω 0.264 +0.2 (2.5) VBE 0.65 –0.1 E S –2.0mA –2.5mA 4.5±0.2 1.6±0.2 +0.2 1.35 –0.1 ✽hFE Rank O (5000 to 12000), Y (8000 to 20000) –10 φ 3.2±0.2 15.4±0.3 9.9 ±0.2 2±0.1 V min (41) V –5 VCE = –150V 5±0.2 –150 VEBO Conditions ICBO 28±0.3 VCEO Symbol 7±0.2 V (Unit: mm) 23±0.3 150 External Dimensions 22±0.3 VCBO ( Ta = 25°C ) Ratings 3.3±0.2 Unit 3.4max Ratings Di IF ■Electrical Characteristics (Ta=25°C) Symbol Emitter resistor RE: 0.22Ω Typ. S R: 70Ω Typ. (Complement to type SAP09N) ■Absolute maximum ratings E D 125 Ambient Temperature Ta (°C) 150 –3