SBE602 Ordering number : EN8965 SANYO Semiconductors DATA SHEET SBE602 Schottky Barrier Diode (Twin Type • Cathode Common) 30V, 70mA Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim. Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak Reverse Voltage Symbol Conditions Ratings Unit VRRM VRSM 30 35 V Average Output Current IO 70 mA Surge Forward Current IFSM Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle V 2 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Reverse Voltage VR Forward Voltage VF IR=20µA IF=70mA Reverse Current IR1 IR2 VR=2V VR=15V Interterminal Capacitance C Reverse Recovery Time trr Therrmal Resistance Rth(j-a) VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit. Mounted in Cu-foiled area of 0.72mm2✕0.03mm on glass epoxy board Ratings min typ max 30 Unit V 0.55 V 75 nA 5.0 µA 5.5 pF 10 300 ns °C / W Marking : SQ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1806SB SY IM TC-00000234 No.8965-1/3 SBE602 Package Dimensions Electrical Connection unit : mm (typ) 7019A-002 2 1 0.15 0.25 2.0 1 : Anode 2 : Anode 3 : Cathode 0 to 0.02 1.6 2.1 3 3 Top view 0.25 1 2 0.65 0.85 0.3 0.07 1 : Anode 2 : Anode 3 : Cathode SANYO : MCPH3 trr Test Circuit 100Ω 10Ω 10mA 50Ω 1mA 10mA Duty≤10% 10µs --5V trr IF -- VF 3 IR -- VR 1000 2 Reverse Current, IR -- µA 7 5 3 2 0.01 7 5 5°C 100 °C 75° C 50°C 25°C 0°C --25° C 2 0.001 0 0.1 0.3 0.4 0.5 0.6 Average Forward Power Dissipation, PF(AV) -- W (1) (2) (4) (3) 360° 0.035 Sine wave 0.030 180° 0.025 360° 0.020 0.015 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.010 0.005 0 0 0.01 1.0 50°C 25°C 0.02 0.03 0.04 0.05 0 5 10 0.06 Average Output Current, IO -- A 0.07 0.08 IT11427 15 20 25 30 Reverse Voltage, VR -- V IT11425 θ 0.040 75°C 0.7 PF(AV) -- IO Rectangular wave 0.045 100°C 10 0.01 0.2 Forward Voltage, VF -- V 0.050 Ta=125°C 100 0.1 Ta= 12 3 Average Reverse Power Dissipation, PR(AV) -- W Forward Current, IF -- A 0.1 35 IT11426 PR(AV) -- VR 4.0E--06 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 3.5E--06 3.0E--06 (2) 360° θ Rectangular wave V 2.5E--06 (1) (3) R 2.0E--06 Sine wave 360° 180° 1.5E--06 VR (4) 1.0E--06 5.0E--07 0.0E+00 0 5 10 15 20 25 Peak Reverse Voltage, VR -- V 30 35 IT11428 No.8965-2/3 SBE602 C -- VR 2 10 7 5 3 2 0.1 IFSM -- t 2.8 f=1MHz Surge Forward Current, IFSM(Peak) -- A Interterminal Capacitance, C -- pF 3 Current waveform 50Hz sine wave 2.4 IS 20ms t 2.0 1.6 1.2 0.8 0.4 0 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT11429 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Time, t -- s 2 3 ID00235 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No.8965-3/3