STMICROELECTRONICS SD2943

SD2943
RF Power Transistor
HF/VHF/UHF N - Channel MOSFETs
General Features
■
HIGH POWER CAPABILITY
■
POUT = 350W MIN. WITH 22dB GAIN @ 30
MHz
■
PSAT = 450 W
■
LOW R DS(on)
■
THERMALLY ENHANCED PACKAGING FOR
LOWER JUNCTION TEMPERATURES
■
GOLD METALLIZATION
■
EXCELLENT THERMAL STABILITY
■
COMMON SOURCE CONFIGURATION
M177 Epoxy sealed
Pin Connection
4
1
5
3
Description
The SD2943 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V dc large signal applications up 150
MHz. SD2943 offers a 20% higher power
saturation than SD2933, it is idea for ISM
applications where reliability and ruggedness are
critical factors.
2
1. Drain
4. Source
2. Source
5. Source
3. Gate
Order Codes
Part Number
Marking
Package
Packaging
SD2943
SD2943
M177
Plastic Tray
October 2005
Rev 1
1/14
www.st.com
14
SD2943
Contents
1
Electrical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3
Electrical Characteristics (TCASE = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Typical Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/14
SD2943
1 Electrical Data
1
Electrical Data
1.1
Maximum Rating
Table 1.
Absolute Maximum Rating (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS(1)
VDGR(2)
VGS
ID
PDISS
Tj
EAS
Value
Unit
Drain Source Voltage
130
V
Drain-Gate Voltage (RGS = 1MΩ)
130
V
Gate-Source Volatge
±20
V
Drain Current
40
A
Power Dissipation
648
W
Max. Operating Junction Temperature
200
°C
Avalanche Energy, Single Pulse (ID = 60A)
1500
mJ
50
mJ
-65 to +150
°C
EAR (2)
Avalanche Energy, Repetitive
TSTG
Storage Temperature
1. TJ = 150 °C
2. Repetitive rating: Pulse width limited by maximum junction temperature; Repetitive avalanche causes additional power
losses that can be calculated as: PAV = EAR * f
1.2
Thermal Data
Table 2.
Symbol
RthJC
Thermal data
Parameter
Junction to Case thermal resistance
Value
Unit
0.27
°C/W
3/14
SD2943
1 Electrical Data
1.3
Electrical Characteristics (TCASE = 25°C)
Table 3.
Static
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS(1)
VGS = 0 V
IDS = 200 mA
IDSS
VGS = 0 V
VDS = 50 V
100
µA
IGSS
VGS = 20 V
VDS = 0 V
500
nA
VGS(Q)
VDS = 10 V
ID = 250 mA
4
V
VDS(ON)
VGS = 10 V
ID = 20 A
2
V
G FS(2)
VDS = 10 V
ID = 10 A
CISS
VGS = 0 V
VDS = 50 V
f = 1 MHz
830
pF
COSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
470
pF
CRSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
35
pF
130
V
2
10
mho
1. TJ = 150°C
2. GFS sorts for each unit see Table 5
Table 4.
Dynamic
Symbol
Test Conditions
POUT
VDD = 50 V
IDQ = 250 mA
G PS
VDD = 50 V
IDQ = 250 mA POUT = 350 W
hD
VDD = 50 V
IDQ = 250 mA POUT = 350 W
Load
Mismatch
VDD = 50 V
IDQ = 250 mA POUT = 350 W
Table 5.
4/14
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 30 MHz
All Phase Angles
GFS SORTS
Symbol
Value
A
10 ÷ 10.99
B
11 ÷ 11.99
C
12 ÷ 12.99
D
13 ÷ 13.99
E
14 ÷ 14.99
F
15 ÷ 15.99
G
16 ÷ 16.99
H
17 ÷ 18
Min.
Typ.
350
450
W
22
25
dB
60
65
%
3:1
Max.
Unit
VSWR
SD2943
2
2 Impedance
Impedance
Figure 1.
Impedance Data Schematic
D
ZDL
Typical Drain
Load Impedance
Typical Input
Impedance
G
ZIN
S
Table 6.
Impedance Data
f
ZIN (Ω)
ZDL (Ω)
30 MHz
1.3 - j 2.9
3.1 + j 2.3
108 MHz
1.4 - j 2.4
1.9 + j 1.4
175 MHz
1.4 - j 2.2
1.7 +j 1.6
5/14
SD2943
3 Typical Performance
3
Typical Performance
Figure 2.
Capacitance Vs Drain Voltage
Figure 3.
10000
Drain Current Vs Gate Voltage
40
Vds = 10 V
35
CISS
Capacitance (pF)
1000
30
COSS
Id (A)
25
100
15
CRSS
10
5
1
Tc = +80 ºC
Tc = -20 ºC
0
0
Figure 4.
4
8
12
16
20
24 28 32
Vdd (V)
36
40
44
48
52
56
0
1
2
3
4
5
6
Vgs (V)
Gate-Source Voltage Vs Case Temp. Figure 5.
1.15
Max. Therm. Resist. Vs Case Temp.
0.33
1.1
Id= 12 A
Id= 10 A
1.05
0.32
Id= 7 A
Id= 5 A
Id= 15 A
1
0.95
Id=.1 A
Id= 4 A
0.9
Id= 3 A
Vdd= 10 V
RTH(j-c) (°C/W)
Vgs, GATE-SOURCE VOLTAGE (NORMALIZED)
Tc = +20 ºC
10
Freq = 1 MHz
0.31
0.3
0.29
0.28
Id= 2 A
0.85
0.27
Id= 1 A
Id=.25 A
0.8
-25
0
25
50
Tc, CASE TEMPERATURE (ºC)
6/14
20
75
100
0.26
25
30
35
40
45
50
55
60
65
70
Tc, CASE TEMPERATURE (°C)
75
80
85
SD2943
3 Typical Performance
Figure 6.
Pout Vs Input Power & Drain Voltage Figure 7.
500
500
450
450
Pout Vs Input Power & Case Temp.
Tc = +25 ºC
400
Tc = +80 ºC
400
Vdd = 50 V
350
350
Pout (W)
300
Pout (W)
Tc = -20 ºC
Vdd = 40 V
250
300
250
200
200
150
150
100
100
Freq = 30 MHz
Idq = 250 mA
50
Freq = 30 MHz
Vdd = 50 V
Idq = 250 mA
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
Pin (W)
Table 7.
2.0
2.5
3.0
3.5
4.0
4.5
Pin (W)
Efficiency Vs Pout
Figure 8.
Power Gain Vs Pout & Case Temp.
30
80
28
70
Tc = +25 ºC
60
26
50
24
Gain (dB)
Nd (%)
Tc = +25 ºC
40
Tc = -20 ºC
Tc = +80 ºC
22
20
30
18
20
Freq = 30 MHz
Vdd = 50 V
Idq = 250 mA
10
Freq = 30 MHz
Vdd = 50 V
Idq = 250 mA
16
0
14
0
50
100
150
200
250
Pout (W)
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
Pout (W)
7/14
SD2943
3 Typical Performance
Figure 9.
Pout Vs Gate Voltage
Figure 10. Pout Vs Drain Voltage
440
440
Tc = -20 ºC
400
Tc = +25 ºC
360
Pin = 2.2 W
Freq = 30 MHz
Idq = 250mA
400
360
320
320
240
Pout (W)
Pout (W)
280
Tc = +80 ºC
200
160
280
Pin = 1.1 W
240
200
120
40
120
80
0
-3 -2.5 -2 -1.5
-1 -0.5
0
0.5
Vgs (V)
8/14
Pin = 0.55 W
160
Freq = 30 MHz
Pin = 1.1 W
Vdd = 50 V
Idq = 250 mA
80
1
1.5
2
2.5
3
3.5
26
28
30
32
34
36
38
40
Vdd (V)
42
44
46
48
50
52
SD2943
4
4 Test Circuit
Test Circuit
Figure 11. 30 MHz Test Circuit Schematic
Note: 1 Dimension at component symbol are reference for component placement.
2 Gap between group and trasmission files are 0.056[1.42] typ.
3 Transmission lime are not 1:1 scale.
4 Input and output trasmission line are 50Ω
9/14
SD2943
4 Test Circuit
Table 8.
30 MHz Test Circuit Component Part List
Symbol
Description
C1,C9
0.01 µF / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR
C2, C3
750 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C4
300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C5,C10,C11,C14,C16 10000 pF ATC 200B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C6
510 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7
300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C8
175-680 pF TYPE 46 STANDARD TRIMMER CAPACITOR
C12
47 µF / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C13
1200 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C15
100 µF / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
R1,R3
R2
560Ω 2 W WIRE-WOUND AXILS LEAD RESISTOR
T1
HF 2-30 MHz SURFACE MOUNT 9:1 TRANSFORMER
T2
RG - 142B/U 50Ω COAXIAL CABLE OD = 0.165[4.18] L 15”[381.00] COVERED WITH
15”[381.00] TINNED COPPER TUBULAR BRAND 13/65” [5.1] WIDTH
L1
1 3/4 TURN AIR-WOUND 16 AWG ID = 0.219 [5.56] POLY-COATED MAGNET WIRE
L2
1 3/4 TURN AIR-WOUND 12 AWG ID = 0.250 [6.34] BUS BAR WIRE
RFC1,RFC2
10/14
1 KΩ 1 W SURFACE MOUNT CHIP RESISTOR
3 TURNS 14 AWG WIRE THROUGH FAIR RITE TOROID
FB1
SURFACE MOUNT EMI SHIELD BEAD
FB2
TOROID
PCB
ULTRALAM 2000. 0.030” THK,
εr = 2.55, 2 Oz ED CU BOTH SIDES
SD2943
4 Test Circuit
4 inches
Figure 12. 30 MHz Test Circuit Photomaster
6.4 inches
Figure 13. 30 MHz Test Circuit
11/14
SD2943
5 Mechanical Data
5
Mechanical Data
Table 9.
M177 (.550 DIA 4/L N/HERM W/FLG)
mm.
inch
DIM.
MIN.
TYP
MIN.
TYP
MAX.
A
5.72
5.97
0.225
0.235
B
6.73
6.96
0.265
0.275
C
21.84
22.10
0.860
0.870
D
28.70
28.96
1.130
1.140
E
13.84
14.10
0.545
0.555
F
0.08
0.18
0.003
0.007
G
2.49
2.74
0.098
0.108
H
3.81
4.32
0.150
0.170
I
7.11
0.280
J
27.43
28.45
1.080
1.120
K
15.88
16.13
0.625
0.635
Figure 14. M177 Package Dimensions
12/14
MAX.
SD2943
6
6 Revision History
Revision History
Date
Revision
Description of Changes
18 Oct 2005
1
First Issue.
13/14
SD2943
6 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
14/14