PF135-08 SED1200F Dot Matrix LCD Controller Driver ge a olt n V de tio Wi pera cts O rodu P ● 1/8 or 1/16 Duty Dot Matrix Drive ● 20 Character Simultaneous Display ● Built in Character Generator ROM and RAM ■ DESCRIPTION The SED1200F is a dot matrix LCD controller/driver with a built in CG (character generator). The circuit consists of a CG ROM which contains 160 different characters, 4 words CG RAM, 20 words display data RAM and logic functions to operate a 20 character display. Additional characters may be used by writing CG data to the 4 words CG RAM. The device also contains the resistor array for the LCD power supply. The SED1200F is fabricated Silicon Gate CMOS process and features very low power dissipation. This makes the device very desirable for applications in hand held, portable and other battery powered instruments. ■ FEATURES ● 1/8 or 1/16 duty cycle dot matrix drive ● 20 character simultaneous display ● Built in character generator ROM and RAM ● Built in CR oscillator ● Built in resistor array for LCD power supply ● Compatible with 4 or 8 bit microprocessors ● 2 kinds of character font ● TTL Compatible ● 5×7+Cursor line or 558 character font ● Power supply Logic : 2.5V to 5.5V LCD : 3.5V to 5.5V ● Package ............ SED1200F : QFP1-80pin (plastic) SED1200D : Die form ■ BLOCK DIAGRAM OSC1 OSC2 Timing Generator CLK Input Controller WR RD A0 CS Latch Oscillator Address Counter Timing Generator Address Controller Instruction Register DDRAM 10✕2words (160 bits) Write/Read Controller DB0 DB1 DB2 DB3 Address Counter Common Generator Common Driver COM16 CGRAM CGRAM 5✕8 dots✕4 (160 bits) COM1 CGROM 160 words LC Power Supply Write/Read Controller Segment Signal Generator LC Power Divider VLCD Data Controller Segment Driver SEG1 SEG50 VSS VDD 1 SED1200F ■ PIN CONFIGURATION ■ PIN DESCRIPTION SEG34 SEG35 SEG36 SEG37 SEG38 SEG39 SEG40 SEG41 SEG42 SEG43 SEG44 SEG45 SEG46 SEG47 SEG48 SEG49 SEG50 COM16 COM15 COM14 COM13 COM12 COM11 COM10 QFP1-80pin 60 50 41 40 70 SED1200F 30 INDEX 75 1 24 COM9 VDD VLCD VSS DB0 DB1 DB2 DB3 OSC1 OSC2 CLK WR RD CS A0 COM8 Pin Name I/O COM1 to COM16 O LCD Common output 17 to 1 80 to 48 SEG1 to SEG 50 O LCD Segment output 27 CS I Chip select input (active "Low") 28 RD I Read enable input (active "Low") 29 WR I Write enable input (active "Low" to "High") 26 A0 I 36 to 33 30 32, 31 39 37 38 SEG17 SEG16 SEG15 SEG14 SEG13 SEG12 SEG11 SEG10 SEG9 SEG8 SEG7 SEG6 SEG5 SEG4 SEG3 SEG2 SEG1 COM1 COM2 COM3 COM4 COM5 COM6 COM7 SEG33 SEG32 SEG31 SEG30 SEG29 SEG28 SEG27 SEG26 SEG25 SEG24 SEG23 SEG22 SEG21 SEG20 SEG19 SEG18 64 65 Pin No. 18 to 25 40 to 47 "High" ; Set character code. "Low" ; Command DB0 to DB3 I, I/O CLK OSC1, OSC2 VDD VSS VLCD Function I — — — — Data input (except DB3 ; Data input/output) Clock for command Connect oscillation resistor Supply voltage (+5V) for logic GND (0V) Supply voltage for LCD ■ ABSOLUTE MAXIMUM RATINGS Rating Supply voltage (1) Supply voltage (2) Input voltage Output voltage Operating temperature Storage temperature (VSS = 0V) Symbol VDD VLCD VI VO Topr Tstg Value –0.3 to+7.0 VDD–7.0 to VDD+0.3 –0.3 to VDD+0.3 –0.3 to VDD+0.3 –10 to+70 –65 to+150 Unit V V V V °C °C ■ ELECTRICAL CHARACTERISTICS ● AC Characteristics (Read cycle) Characteristic A0 setup time to RD CS setup time to RD Output delay time from RD A0 hold time after RD CS hold time after RD Data hold time Read pulse width Input fall time Input rise time Symbol tAR tCR tRD tRA tRC tRH tRP tHL tLH (VDD = 5V±10%, VSS = 0V, Ta = –10 to+70°C) Condition Min. 0 0 — 20 20 10 350 — — ● AC Characteristics (Write cycle) Characteristic A0 setup time to WR CS setup time to WR Data setup time A0 hold time after WR CS hold time afrer WR Data hold time Write pulse width Input fall time Input rise time Symbol tAW tCW tDS tWA tWC tDH tWP tHL tLH Typ. — — — — — — — — — Max. — — — — — — — 50 50 tRA tCR tRP tRD Input (A0, CS, RD, CLK) tHL 2.0V 0.8V tLH CS tRC tRH 2.4V 0.4V Unit ns ns ns ns ns ns ns ns ns Unit ns ns ns ns ns ns ns ns ns (Write cycle) A0 tAR DB3 2 Min. 0 0 120 20 20 20 200 — — (Read cycle) A0 CS RD Max. — — 250 — — — — 50 50 (VDD = 5V±10%, VSS = 0V, Ta = –10 to+70°C) Condition ● Timing Chart Typ. — — — — — — — — — DB0 to DB3 WR tDS tCW Input (A0, CS, WR DB0 to DB3, CLK) tDH tWP tHL tAW tDS tWP 2.0V 0.8V tLH tDH tWC tWA SED1200F ● DC Characteristics (VDD = 5V) Characteristic Logic operating voltage LCD operating voltage Resistor for oscillator Condition Min. 4.5 VDD = 5V, fOSC = 100kHz VDD = 4.5 to 5.5V VDD = 4.5 to 5.5V ✻1 VDD = 5.5V, VIH = 5.5V ✻2 VDD = 5.5V, VIL = 0V ✻2 VIH2 VIL2 VDD = 4.5 to 5.5V VDD = 4.5 to 5.5V ✻3 IOH IOL VDD = 5V, VOH = 2.4V ✻4 VDD = 5V, VOL = 0.4V VIL = 0V, VDD = 5V ✻4 Rf VIH1 VIL1 ILIH ILIL Input leakage current; Low Input voltage; High (2) Input voltage; Low (2) Output current; High Output current; Low Input pull up current Resistor as power divider Operating frequency (1) IIPU Rd 2.0 0 — ✻1 1.0 VDD 0 1.0 0 — 0.2VDD 1.6 3 — 10 130 ✻3 ✻5 30 — — ❘ IOL VL1C ❘ 1/16 duty drive Voltage drop by 0.5V ❘ IOL VL4C ❘ ❘ IOL VDDS ❘ When one terminal is measured, ❘ IOL VLCDS ❘ the others are open. ❘ IOL VL2S ❘ ❘ IOL VL3S ❘ Terminal: CS, RD, WR, A0, DB0 to DB3, CLK Terminal: CLK, OSC1, DB0 to DB3 ✻3. Terminal: OSC1 (for external clock) ✻4. ✻5. — — 30 300 300 100 — µA µA V V mA mA µA 3.2 kΩ kHz MHz — 80 150 µA — — 16/CLK (MHz) µs 20 20 8 8 12 12 — — — — — — µA µA µA µA µA µA µA µA — — — — — — 4 4 ✻2. kΩ V V — VDD VDD = 4.5V VLCD = 1.0V ✻1. 380 VDD — 0.8VDD VDD = 4.5 to 5.5V ❘ IOH VDDC ❘ ❘ IOL VLCDC ❘ Unit V V 0.8 1.0 tCOMD Command execution time — 310 — Max. 5.5 VDD–4 — — VDD = 5V, VLCD = 0V ✻6 fOSC = 100kHz, CLK = 1MHz IDD Operating current 240 VDD = 4.5 to 5.5V fOSC CLK Operating frequency (2) Typ. 5 VDD–5.5 VLCD Input voltage; High (1) Input voltage; Low (1) Input leakage current; High Common output current (1) Common output current (2) Common output current (3) Common output current (4) Segment output current (1) Segment output current (2) Segment output current (3) Segment output current (4) (VSS = 0V, Ta = –10 to +70°C) Symbol VDD — — — — Terminal: DB3 Terminal: CS, RD WR, A0 ✻6. CS = RD = WR = A0 = 5.0V (open output terminals) ● Display Command 1st input Command Name CS WR RD AO 2nd input DB3 DB2 DB1 DB0 (D7) (D6) (D5) (D4) DB3 DB2 DB1 (D3) (D2) (D1) Note DB0 (D0) SET CURSOR DIRECTION 0 0 1 0 0 0 0 0 0 1 0 D/I CURSOR ADDRESS–1/+1 0 0 1 0 0 0 0 0 0 1 1 –1/+1 CURSORFONT SELECT 0 0 1 0 0 0 0 0 1 0 0 A/U CURSOR BLINK ON/OFF 0 0 1 0 0 0 0 0 1 0 1 ON/OFF DISPLAY ON/OFF 0 0 1 0 0 0 0 0 1 1 0 ON/OFF CURSOR ON/OFF 0 0 1 0 0 0 0 0 1 1 1 ON/OFF D0 D0 D0 D0 D0 D0 D0 D0 D0 D0 D0 D0 SYSTEM RESET 0 0 1 0 0 0 0 1 0 0 0 0 Except data RAM and CGRAM LINE SELECT 0 0 1 0 0 0 0 1 0 0 1 2/1 ✻ ✻ SET CURSOR 1st LINE 0 0 1 0 1 0 (N figure—1)B ADDRESS 2nd LINE 0 0 1 0 1 1 (N figure—1)B SET CHARACTER CODE 0 0 1 1 (CHARACTER CODE) BUSY FLAG CHECK 0 1 0 0 BF ✻ ✻ SET CGRAM ADDRESS 0 0 1 0 0 0 1 SET CGRAM DATA 0 0 1 0 0 1 0 ✻ BF ✻ 0 (Set lower address) = = = = = = = = = = = = 1 0 1 0 1 0 1 0 1 0 1 0 : : : : : : : : : : : : Decrement Increment –1 +1 All dots blinking Under line ON OFF ON OFF ON OFF D0 = 1 : 2 line display (1/16 duty) D0 = 0 : 1 line display (1/8 duty) D7 (D3 = 1 : Busy D7 (D3 = 0 : Not Busy (Set CGRAM data) ✻ = High impedance Note: Misoperation may be caused when any command other than that listed in the above table is inputted. 3 SED1200F ■ CHARACTER CODE MAP (SED1200FOB) Lower 4bit (D4 to D7) of Character Code (Hexadecimal) 0 1 2 3 4 5 6 7 8 9 A B C D E F CG RAM AREA 5X8 DOTS 0 Upper 4bit (O to D3) of Charactor Code (Hexadecimal) 2 3 4 5 6 7 A B C D ■ CPU INTERFACE ■ PACKAGE DIMENSIONS The SED1200F can connect to the address bus or the data bus directly or alternatively, a peripheral interface unit. An example is shown below. Plastic QFP1-80pin 25.2±0.4 20±0.1 64 41 65 INDEX 25 80 1 2.6max +0.1 24 0.35 –0.05 0.23 2±0.1 0.8 0.15±0.05 0° 12° +0.3 1.2 –0.5 2.6 4 Out port Out port Out port Out port Out port Out port Out port I/O port 19.2±0.4 14±0.1 40 clock 4/8 bit CPU Unit: mm A0 RD WR CS DB0 DB1 DB2 DB3 CLK SED1200FOB SED1200F ■ DIE SPECIFICATION ● PAD LAYOUT ● PAD COORDINATION 1705 (0, 0) –1705 –2930 ● Die Specification Die Size Die Thickness ● Pad Specification Pad Size Pad Pitch 2930 5.86✕3.41mm 400 µm 90✕90 µm 190 µm unit : µm Pad Pad Name No. X Y Pad Pad Name No. X Y 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 2123 1932 1742 1551 1361 1170 980 789 599 408 218 27 –163 –354 –544 –735 –925 –1116 –1306 –1497 –1687 –1878 –2068 –2259 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 –2778 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1552 1429 1238 1048 857 667 476 286 95 –95 –286 –476 –667 –857 –1048 –1238 –1429 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 –2220 –2029 –1839 –1648 –1458 –1267 –1077 –886 –696 –505 –315 –124 66 257 447 638 828 1019 1209 1400 1590 1781 1971 2162 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 2777 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1552 –1385 –1195 –1004 –814 –623 –433 –242 –52 139 329 520 710 901 1091 1282 1472 SEG17 SEG16 SEG15 SEG14 SEG13 SEG12 SEG11 SEG10 SEG9 SEG8 SEG7 SEG6 SEG5 SEG4 SEG3 SEG2 SEG1 COM1 COM2 COM3 COM4 COM5 COM6 COM7 COM8 A0 CS RD WR ø XD XG DB3 DB2 DB1 DB0 VSS VLCD VDD COM9 COM10 COM11 COM12 COM13 COM14 COM15 COM16 SEG50 SEG49 SEG48 SEG47 SEG46 SEG45 SEG44 SEG43 SEG42 SEG41 SEG40 SEG39 SEG38 SEG37 SEG36 SEG35 SEG34 SEG33 SEG32 SEG31 SEG30 SEG29 SEG28 SEG27 SEG26 SEG25 SEG24 SEG23 SEG22 SEG21 SEG20 SEG19 SEG18 Note: The origin of cordination is center of the die. 5 SED1200F NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material or due to its application or use in any product or circuit and, further, there is no representation that this material is applicable to products requiring high level reliability, such as, medical products. Moreover, no license to any intellectual property rights is granted by implication or otherwise, and there is no representation or warranty that anything made in accordance with this material will be free from any patent or copyright infringement of a third party. This material or portions thereof may contain technology or the subject relating to strategic products under the control of the Foreign Exchange and Foreign Trade Control Law of Japan and may require an export license from the Ministry of International Trade and Industry or other approval from another government agency. All product names mentioned herein are trademarks and/or registered trademarks of their respective companies. ©Seiko Epson Corporation 1998 All rights reserved. ELECTRONIC DEVICES MARKETING DIVISION Electronic Device Marketing Department IC Marketing & Engineering Group 421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN Phone: +81-(0)42-587-5816 Fax: +81-(0)42-587-5624 ED International Marketing Department I (Europe & U.S.A.) 421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN Phone: +81-(0)42-587-5812 Fax: +81-(0)42-587-5564 ED International Marketing Department II (Asia) 421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN Phone: +81-(0)42-587-5814 Fax: +81-(0)42-587-5110 Electric Device Information of EPSON WWW server http://www.epson.co.jp 6