WILLAS FM120-M+ SEDFN05V4THRU FM1200-M+ Ultra Low Capacitance TVS Arrays 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Applications Features better reverse leakage current and thermal resistance. z z z z z z z z SOD-123H • Low profile surface mounted application in order to optimize board space. Package design optimized for high speed lines • Low power loss, high efficiency. Flow-Through design low forward voltage drop. • High current capability, capability. • High surge Protects four I/O lines • Guardring for overvoltage protection. Low 0.3pF typical (I/O to I/O) high-speed switching. • Ultracapacitance: epitaxial planar chip, metal silicon junction. • Silicon Low clamping voltage Lead-free parts meet environmental standards of •Low operating voltage: 5V MIL-STD-19500 /228 for packing code suffix "G" • RoHS product Solid-state silicon-avalanche technology Halogen free product for packing code suffix "H" z High Definition Multi-Media Interface (HDMI). 0.146(3.7) z Digital Visual Interface 0.130(3.3) (DVI) z DisplayPortTM Interface z MDDI Ports z LVDS z Serial ATA z PCI Express 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Pb-Free package is available Mechanical data 0.040(1.0) RoHS product for packing code suffix ”G” Complies with the following standards 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Halogen free product for packing code suffix “H” IEC61000-4-2 • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Level 4 15 kV (air discharge) Method 2026 General Description 8 kV(contact discharge) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band MIL STD 883E - Method 3015-7 Class 3 • Mounting Position : Any SEDFN05V4 are ultra low capacitance TVS arrays 25 kV HBM (Human Body Model) • Weight : Approximated 0.011 gram designed to protect high speed data interfaces.This RATINGSdesigned AND ELECTRICAL series has MAXIMUM been specifically to protect CHARACTERISTICS Ratings at 25℃components ambient temperature unless otherwise specified. to sensitive which are connected Single phase half wave, 60Hz, resistive of inductive load. high-speed data and transmission lines form For capacitive load, derate current by 20% overvoltage caused RATINGS discharge),CDE(Cable Marking Code by ESD(electrostatic SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Discharge Events),and 12 Maximum Recurrent fast Peak transients) Reverse Voltage EFT(electrical VRRM 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current Functional diagram IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 RΘJA Typical Thermal Resistance (Note 2) 14 40 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Absolute Maximum AverageMaximum Reverse CurrentRatings at @T A=25℃ 0.50 IR 0.9 0.85 0.5 @T A=125℃ Parameter 10 Value Units NOTES: Peak Pulse Power (tp = 8/20μs) 150 Watts P pk I PP Peak Pulse Current (tp = 8/20μs) 5 A V ESD ESD per IEC 61000-4-2 (Air) +/- 17 kV ESD per IEC 61000-4-2 (Contact) +/- 12 TJ Operating Temperature -55 to +125 °C T STG Storage Temperature -55 to +150 °C 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 0.92 Rated DC Blocking Voltage Symbol 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.70 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SEDFN05V4THRU Ultra Low Capacitance TVS Arrays FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Electrical Parameter Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Symbol Parameter application in order to • Low profile surface mounted optimize board space. Reverse Maximum Peak Pulse I•PPLow power loss, high efficiency. Current • High current capability, low forward voltage drop. VC Clamping Voltage @ IPP • High surge capability. Guardring for overvoltage protection. V•RWM Working Peak Reverse Voltage switching. • Ultra high-speed Maximum Reverse Leakage Current •IRSilicon epitaxial planar chip, metal silicon junction. @ VRWM meet environmental standards of • Lead-free parts ITMIL-STD-19500 Test Current /228 • RoHS product for packing code suffix "G" VBR Breakdown Voltage @ I Halogen free product for packing codeTsuffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded Electrical Characteristics (Tamb=25℃) , • Terminals :Plated terminals, solderable per MIL-STD-750 VBR Method 2026 0.031(0.8) Typ. Vc VRWM 0.031(0.8) Typ. C IRWM. • Polarity : Indicated by cathode Min. band • Mounting Position : Any V V V μA • Weight : Approximated 0.011 gram SEDFN05V4 6 15 5 1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in inches Typ and 0v (millimeters) bias pF 0.30 Typical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS Ultra Low Capacitance TVS Arrays 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ SEDFN05V4THRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SEDFN05V4 THRU Ultra Low Capacitance TVS Arrays FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers DFN-10 Mechanical Data better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. .100(2.55) • Low power loss, high efficiency. .096(2.45) • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .041(1.05) .037(0.95) 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) .002(0.05 ) .000(0.00 ) .026(0.65 ) .022(0.55 ) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .0006(0.152) REF. .006(1.50) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .018(0.45) For capacitive load, derate current by 20% .014(0.35) RATINGS .035(0.90) .043(1.10) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .020(0.50)TYP. .100(2.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range 115 150 120 200 V 42 56 70 105 140 V 60 80 100 150 200 V 40 120 -55 to +125 TJ Operating Temperature Range 10 100 1.0 30 (millimeters) Dimensions CJ in inches and Typical Junction Capacitance (Note 1) 18 80 .018(0.45) .014(0.35) RΘJA Typical Thermal Resistance (Note 2) 16 60 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Marking Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Type number SEDFN05V4 2012-09 2012-06 0.70 0.85 0.5 IR 0.9 0.92 V 10 m Marking code 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.50 05V4 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.