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Symbol Conditions
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.
Features
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Typical Applications
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Characteristics
Symbol Conditions
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8
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1
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typ.
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max.
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IJK
GB
1
20-04-2007 SCH
© by SEMIKRON
SEMiX 604GB176HD
Characteristics
Symbol Conditions
Inverse Diode
> 1>
4(( ": 8 ( >(
>
®
SEMiX 4
Trench IGBT Modules
1556
F
1>
4(( "
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8 B'+ : ')(( 5.BL
##
min.
typ.
max.
Units
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=
@+
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IJK
Module
SEMiX 604GB176HD
Preliminary Data
Features
!
Typical Applications
" #
$%
#
Remarks
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* #
M
5NCN
A- B
))
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Temperature sensor
5'((
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(-4@?9+P
OD
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55'((7QH'((J')+'JB'J'((R:
?++(9)P
I
QIR: H
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
20-04-2007 SCH
© by SEMIKRON
SEMiX 604GB176HD
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
20-04-2007 SCH
© by SEMIKRON
SEMiX 604GB176HD
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
20-04-2007 SCH
© by SEMIKRON
SEMiX 604GB176HD
6S 4
%
5
8H
20-04-2007 SCH
© by SEMIKRON