SFH608 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection, 5300 VRMS Features • • • • • • • • • • Very High CTR at IF = 1.0 mA, VCE = 0.5 V Specified Minimum CTR at IF = 0.5 mA, VCE = 1.5 V ≥ 32 % (typ. 120 %) Good CTR Linearity with Forward Current Low CTR Degradation High Collector-Emitter Voltage VCEO = 55 V Isolation Test Voltage: 5300 VRMS Low Current Input Low Coupling Capacitance High Common Mode Transient Immunity • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 • CSA 93751 • BSI IEC60950 IEC60065 Applications Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces A 1 6 B C 2 5 C NC 3 4 E e3 i179004 Pb Pb-free Description The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output transistor saturated. This makes the device ideal for low current switching applications. The SFH608 is packaged in a six pin plastic DIP. Order Information Part Remarks SFH608-2 CTR 63 - 125 %, DIP-6 SFH608-3 CTR 100 - 200 %, DIP-6 SFH608-4 CTR 160 - 320 %, DIP-6 SFH608-5 CTR 250 - 500 %, DIP-6 SFH608-2-X006 CTR 63 - 125 %, DIP-6 400 mil (option 6) SFH608-2-X007 CTR 63 - 125 %, SMD-6 (option 7) SFH608-2-X009 CTR 63 - 125 %, SMD-6 (option 9) SFH608-3-X006 CTR 100 - 200 %, DIP-6 400 mil (option 6) SFH608-3-X007 CTR 100 - 200 %, SMD-6 (option 7) SFH608-4-X006 CTR 160 - 320 %, DIP-6 400 mil (option 6) SFH608-4-X007 CTR 160 - 320 %, SMD-6 (option 7) SFH608-5-X007 CTR 250 - 500 %, SMD-6 (option 7) For additional information on the available options refer to Option Information. Document Number 83664 Rev. 1.4, 26-Oct-04 www.vishay.com 1 SFH608 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V DC Forward current IF 50 mA IFSM 2.5 A Pdiss 70 mW Symbol Value Unit VCE 55 V Collector-base voltage VCBO 55 V Emitter-base voltage VEBO 7.0 V IC 50 mA 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Surge forward current Test condition t ≤ 10 µs Total power dissipation Unit Output Parameter Test condition Collector-emitter voltage Collector current Surge collector current tp ≤ 1.0 ms Total power dissipation Coupler Parameter Isolation test voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) Test condition t = 1.0 s Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 10 Ω 11 Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Tamb - 55 to + 100 °C Tsld 260 °C Soldering temperature www.vishay.com 2 max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.1 1.5 Unit Forward voltage IF = 5.0 mA VF Reverse voltage IR = 10 µA VR Reverse current VR = 6.0 V IR 0.01 Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF Rthja 1070 K/W Thermal resistance V 6.0 V µA 10 Output Symbol Min Voltage, collector-emitter Parameter ICE = 10 µA Test condition VCEO 55 Typ. Max Unit V Voltage, emitter-base IEB = 10 µA VEBO 7.0 V Collector-emitter capacitance VCE = 5.0, f = 1.0 MHz CCE 10 pF Collector - base capacitance VCE = 5.0, f = 1.0 MHz CCB 16 pF Emitter - base capacitance VCE = 5.0, f = 1.0 MHz CEB 10 pF Rthja 500 ICEO 10 Thermal resistance Collector-emitter leakage current VCE = 10 V K/W 200 nA Coupler Parameter Test condition Part Coupling capacitance Saturation voltage, collectoremitter Symbol Min Typ. CC 0.60 Max Unit pF IC = 0.32 mA, IF = 1.0 mA SFH608-2 VCEsat 0.25 0.4 V IC = 0.5 mA, IF = 1.0 mA SFH608-3 VCEsat 0.25 0.4 V IC = 0.8 mA, IF = 1.0 mA SFH608-4 VCEsat 0.25 0.4 V IC = 01.25 mA, IF = 1.0 mA SFH608-5 VCEsat 0.25 0.4 V Current Transfer Ratio Parameter Coupling Transfer Ratio Document Number 83664 Rev. 1.4, 26-Oct-04 Part Symbol Min IF = 1.0 mA, VCE = 0.5 V Test condition SFH608-2 CTR 63 IF = 0.5 mA, VCE = 1.5 V SFH608-2 CTR 32 IF = 1.0 mA, VCE = 0.5 V SFH608-3 CTR 100 IF = 0.5 mA, VCE = 1.5 V SFH608-3 CTR 50 IF = 1.0 mA, VCE = 0.5 V SFH608-4 CTR 160 IF = 0.5 mA, VCE = 1.5 V SFH608-4 CTR 80 IF = 1.0 mA, VCE = 0.5 V SFH608-5 CTR 250 IF = 0.5 mA, VCE = 1.5 V SFH608-5 CTR 125 Typ. Max 125 75 % % 200 120 % % 320 200 % % 500 300 Unit % % www.vishay.com 3 SFH608 Vishay Semiconductors Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Turn-on time IC = 2.0 mA (to adjust by IF), RL = 100 Ω, VCC = 5.0 V ton 8.0 µs Rise time IC = 2.0 mA (to adjust by IF), RL = 100 Ω, VCC = 5.0 V tr 5.0 µs Turn-off time IC = 2.0 mA (to adjust by IF), RL = 100 Ω, VCC= 5.0 V toff 7.5 µs Fall time IC = 2.0 mA (to adjust by IF), RL = 100 Ω, VCC = 5.0 V tf 7.0 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF RL VCC IC 47 Ω VCE = 0.5 V, CTR = f (TA, IF) isfh608_01 isfh608_03 Figure 1. Switching Schematic Figure 3. Current Transfer Ratio (typ.) VCE = 1.5 V, CTR = f (TA, IF) IF = 1.0 mA, VCE = 5.0 V, tON, tR, tOFF, tF, = f (RL) isfh608_04 isfh608_02 Figure 2. Switching Times www.vishay.com 4 Figure 4. Current Transfer Ratio (typ.) Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors VF = f (IF) ICE = f (VCE, IF) isfh608_08 isfh608_05 Figure 8. Output Characteristics Figure 5. Diode Forward Voltage (typ.) IF = 1.0 mA, VF = f (TA) IF = f (TA) isfh608_06 isfh608_09 Figure 9. Permissible Forward Current Diode Figure 6. Diode Forward Voltage (typ.) Ptot = f (TA) ICE = f (VCE, IB) isfh608_10 isfh608_07 Figure 7. Output Characteristics Document Number 83664 Rev. 1.4, 26-Oct-04 Figure 10. Permissible Power Dissipation for Transistor and Diode www.vishay.com 5 SFH608 Vishay Semiconductors f=1.0 MHz,CCE=f (VCE) CCB=f (VCB), CEB=f (VEB) IF = 0, VCE = 10 V, ICEO = f (TA) isfh608_12 isfh608_11 Figure 11. Transistor Capacitance Figure 12. Collector-Emitter Leakage Current vs.Temp. Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 www.vishay.com 6 Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) Document Number 83664 Rev. 1.4, 26-Oct-04 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 www.vishay.com 7 SFH608 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83664 Rev. 1.4, 26-Oct-04