SFH6345 HIGH SPEED 5.3 kV OPTOCOUPLER FEATURES • Direct Replacement for HCPL4503 • High Speed Optocoupler without Base Connection • GaAlAs Emitter • Integrated Detector with Photodiode and Transistor • High Data Transmission Rate: 1 MBit/s • TTL Compatible • Open Collector Output • CTR at IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25°C: ≥19% • Good CTR Linearity Relative to Forward Current • Field Effect Stable • Low Coupling Capacitance • Very High Common Mode Transient Immunity dV/dt: ≥15 kV/µ s at VCM=1500 V • Insulation Test Voltage: 5300 VACPK • • DVE VDE 0884 Available with Option 1 • UL Approval, File #E52744 APPLICATIONS • Data Communications • IGBT Drivers • Programmable Controllers DESCRIPTION The SFH6345 is an optocoupler with a GaAlAs infrared emitting diode, optically coupled to an integrated photodetector consisting of a photodiode and a high speed transistor in a DIP-8 plastic package. The device is similar to the 6N135 but has an additional Faraday shield on the detector which enhances the input-output dv/dt immunity. Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. Package Dimensions in Inches (mm) 4 3 2 1 Pin One I.D. NC 1 .268 (6.81) .255 (6.48) 8 VCC Anode 2 7 NC Cathode 3 5 6 7 8 6 Collector NC 4 .390 (9.91) .379 (9.63) 5 Emitter .305 typ. (7.75) typ. .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43) .115 (2.92) 4° Typ. 10 ° Typ. .040 (1.02) .030 (.76 ) 3°–9° .022 (.56) .018 (.46) .100 (2.54) Typ. .012 (.30) .008 (.20) Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage............................................................................ 3 V DC Forward Current ................................................................25 mA Surge Forward Current .................................................................1 A tp≤1 µs, 300 pulses/sec. Total Power Dissipation...........................................................45 mW Detector (Si Photodiode + Transistor) Supply Voltage ................................................................ –0.5 to 30 V Output Voltage .............................................................. –0.5 to ≥25 V Output Current...........................................................................8 mA Total Power Dissipation.........................................................100 mW Package Insulation Isolation Test Voltage between emitter and detector .....................................5300 VACPK (refer to climate DIN 40046, part 2, Nov. 74) Creepage........................................................................ ≥7 mm min. Clearance ....................................................................... ≥7 mm min. Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ......................................... ≥175 Isolation Resistance VIO=500 V, TA=25°C, RISOL ............................................... ≥1012 Ω VIO=500 V, TA=100°C, RISOL ............................................. ≥1011 Ω Storage Temperature Range ...................................... –55 to +150°C Ambient Temperature Range...................................... –55 to +100°C Junction Temperature .............................................................. 100°C Soldering Temperature (t=10 sec. max.)................................. 260°C Dip soldering: distance to seating plane ≥1.5 mm 5–279 Characteristics (TA=0° to 70°C, unless otherwise specified,typical values TA=25°C) Description Symbol Min. Typ. Max. Unit Emitter (IR GaAlAs) Forward Voltage, IF=16 mA VF 1.6 1.9 V Reverse Current, VR=3 V IR 0.5 10 µA Capacitance, VR=0 V, f=1 MHz C0 75 pF Thermal Resistance RthJA 700 °K/W Detector (Si Photodiode + Transistor) µA Supply Current, Logic High IF=0, VO (open), VCC=15 V, TA=25°C IF=0, VO (open), VCC=15 V ICCH Output Current, Output High IF=0, VO (open), VCC=5.5 V, TA=25°C IF=0, VO (open), VCC=15 V, TA=25°C IF=0, VO (open), VCC=15 V IOH Capacitance, VCE=5 V, f=1 MHz CCE 3 pF Thermal Resistance RthJA 300 °K/W Coupling Capacitance CC 0.6 pF Coupling Transfer Ratio IF=16 mA, VO=0.4 V, VCC=4.5 V, TA=25°C IF=16 mA, VO=0.5 V, VCC=4.5 V IC/IF Collector Emitter Saturation Voltage IF=16 mA, IO=2.4 mA, VCC=4.5 V, TA=25°C VOL 0.1 0.4 V Supply Current, Logic Low IF=16 mA, VO open, VCC=15 V ICCL 80 200 µA 0.01 1 2 .003 .01 — 0.5 1 50 µA Package % 19 15 30 — Switching Times (typ.) Pulse generator ZO=50 Ω tr,tf=5 ns duty cycle 10% t≤100 µs IF t VO IF Monitor 5V 1.5 V VOL 1 8 2 7 3 6 4 5 5V IF 100 Ω C=100 nF VO CL=15 pF t tPHL RL tPLH Description Symbol Propagation Delay Time (High–Low) IF=16 mA, VCC=5 V, RL=1.9 kΩ, TA=25°C Propagation Delay Time (Low–High) IF=16 mA, VCC=5 V, RL=1.9 kΩ, TA=25°C Min. Typ. Max. Unit tPHL 0.3 0.8 µs tPLH 0.3 0.8 µs 5–280 SFH6345 Common Mode Transient Immunity VCM 90% 0V 10% 10% IF 90% t tr tf A VO B C=0.1 µF 1 8 2 7 3 6 4 5 5V RL VO VFF 5V A: IF=0 mA VO VOL t B: IF=16 mA Pulse generator VCM t Description Symbol Min. Typ. Max. Unit Common Mode Transient Immunity (High) | CMH| 15 30 kV/µs | CML| 15 30 kV/µs IF=0, VCM=1500 VP-P, RL=1.9 kΩ, VCC=5 V, TA=25°C Common Mode Transient Immunity (Low) IF=16 mA, VCM=1500 VP-P, RL=1.9 kΩ, VCC=5 V, TA=25°C 5–281 SFH6345